HUASHUO-HSBG2103
| Part # | HUASHUO-HSBG2103 |
Download  | HUASHUO-HSBG2103 |
HSBG2103
P-Ch 20V Fast Switching MOSFETs
Description
Product Summary
The HSBG2103 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
-20
V
R
DS(ON),typ
I
D
350
-0.65
m
Ω
A
The HSBG2103 meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
Super Low Gate Charge
⚫
Low Threshold
DFN1006 Pin Configurations
⚫
High-Side Switching
⚫
Advanced high cell density Trench
technology
D
S
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
-20
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
10
V
I
D
@T
A
=25
℃
I
DM
Continuous Drain Current, V
GS
@ -4.5V
1
-0.65
-2.6
A
Pulsed Drain Current
2
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
0.15
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
830
Unit
R
θ
JA
Thermal Resistance Junction-Ambient
1
—
℃
/W
1
V
e
r 2.0
HSBG2103
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-0.65A
-0.014
350
500
-0.65
3.95
—
—
V/
℃
—
520
700
-1.0
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-2.5V , I
D
=-0.05A
—
V
GS(th)
Gate Threshold Voltage
-0.35
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
uA
—
—
-5
V
GS
=
±
10V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (-4.5V)
Gate-Source Charge
—
—
±
10
—
—
8
V
DS
=-10V , V
GS
=-4.5V , I
D
=-0.3A
nC
Q
gs
—
1.3
3.2
9
Q
gd
T
d(on)
Gate-Drain Charge
—
Turn-On Delay Time
—
—
V
DD
=-10V , V
GS
=-4.5V , R
G
=3
,
T
r
T
d(off)
T
f
Rise Time
—
—
—
—
—
—
6
30
19
120
20
11
—
—
—
ns
I
D
=-0.2A
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-16V , V
GS
=0V , f=1MHz
pF
Diode Characteristics
Symbol
Parameter
Diode Forward Voltage
2
Conditions
Min.
Typ.
Max.
Unit
V
SD
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBG2103
P-Ch 20V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBG2103
DFN1006
10000/Tape&Reel
5
V
e
r 2.0
