HUASHUO-HSP3018B
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HSP3018B
N-Ch 30V Fast Switching MOSFETs
Description
Product Summary
The HSP3018B is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
V
DS
30
2
V
R
DS(ON),typ
m
Ω
A
I
D
205
The HSP3018B meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO-220 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
V
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1,6
Pulsed Drain Current
2
205
145
A
A
500
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
246
mJ
A
I
AS
70.2
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
187
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
0.8
1
V
e
r 2.0
HSP3018B
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=30A
0.014
2
—
V/
℃
2.4
3.2
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=15A
2.6
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=30A
50
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
56.9
13.8
23.5
20.1
6.3
—
V
DS
=15V , V
GS
=10V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
,
—
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
124.6
15.8
5850
720
525
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
205
1.2
Unit
A
I
S
Continuous Source Current
1,6
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=70.2A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
2
V
e
r 2.0
HSP3018B
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
V
DS
=15V
I
D
=15A
10
8
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
0
2
0
0
40
80
120
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
V
e
r 2.0
HSP3018B
N-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
0.001
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
