Tritech-MOS-TMN3030BDF
| Part # | Tritech-MOS-TMN3030BDF |
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-Channel
N
Enhancement Mosfet
TMN3030BDF
General Description
General Features
• Low R
DS(ON)
V
DS
= 30V
I
D
=30A
• RoHS and Halogen-Free Compliant
(
typ
.
)
R
DS(ON)
= 9mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking:30N03
(T
A
= 25
°
C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
30
±
20
30
V
V
GS
I
D
@T
A
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
10
A
I
D
@T
A
=70
℃
90
A
I
DM
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
19
mJ
A
25
I
AS
Total Power Dissipation
4
10
W
℃
℃
P
D
@T
A
=25
℃
T
STG
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-ambient
1
—
85
R
θJA
℃
/W
1/6
-Channel
N
Enhancement Mosfet
TMN3030BDF
Electrical Characteristics
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
GS
=0V, I
D
=250μA
V
DS
=30V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
30
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
1.0
1.5
9
2.5
14
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
15
22.5
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
633
120
99
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
15
V
DS
=15V, I
D
=10A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
4.7
3.6
Switching Characteristics
Turn-on Delay Time
–
–
–
–
5
8
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=30V,I
D
=18A,
R
GEN
=3Ω, V
GS
=10V
21
7
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
30
72
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=18A
–
V
Voltage
Body Diode Reverse Recovery Time
7
ns
nC
Body Diode Reverse Recovery
Charge
I
F
=18A,dI/dt=100A/μs
Qrr
5.9
–
Note :
1
.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2O
Z
c
opper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition isV
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=20A
4.
The power dissipation is limited by 150
℃
junctiontemperature
5.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
-Channel
N
Enhancement Mosfet
TMN3030BDF
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
30
I
D
(A)
50
10V
8V
24
40
30
20
3.5V
5V
18
12
3V
125
℃
25
℃
6
0
10
0
V
GS
=2.5V
V
DS
(V)
V
GS
(V)
0
0.6
1.2
1.8
2.4
3.0
0
1
2
3
4
5
6
Figure 3:
On-resistance vs. Drain Current
Figure 4
: Body Diode Characteristics
R
DS(ON)
(mΩ)
I
S
(A)
10
3
25
20
15
10
10
2
10
1
V
GS
=4.5V
V
GS
=10V
150
℃
25
℃
5
0
V
SD
(V)
1.0
I
D
(A)
15
10
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
5
10
20
25
30
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
V
DS
=15 V
I
D
=10A
10
4
10
3
8
6
4
C
iss
C
oss
C
rss
10
2
10
1
2
V
DS
(V)
Q
g
(nC)
9
0
0
3
6
12
15
18
0
5
10
15
20
25
30
-Channel
N
Enhancement Mosfet
TMN3030BDF
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
2.0
1.5
1.1
1.0
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
I
D
(A
)
I
D
(A
)
10
3
24
Limited by
20
16
12
8
10
2
1 μ
0 s
1 0μ
0
10
1
10
0
1
s
1 m
0 s
T
C
=25
℃
Single
4
0
10
0
m
DC
10
-1
0.1
Tc (
℃
)
75 100
V
DS
(V)
1
10
100
0
25
50
125
150 175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
10
-1
D=0.05
D=0.02
D=0.01
Notes
Single pulse 1.Duty factor
2.Peak T
J
=P
DM
*Z
thJC
+T
C
10
-2
T
P
(s
10
-6
-2
10
-5
10
-4
10
-3
10
10
-1
10
0
10
1
-Channel
N
Enhancement Mosfet
TMN3030BDF
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
_
Package Mechanical Dat
a
:
DFN3x3
8L
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
