BORN-BC817-16
| Part # | BORN-BC817-16 |
| Download | BORN-BC817-16 |
BC817
N
PN Plastic-Encapsulate Transistor
»
Feature
s
»
Pin Configurations
3 COLLECTOR
V
CE
=
45
V
I
C
=
0.5
A
1 BASE
f
T
=
1
0
0
MHZ
@
V
CE
=
5
V
,
I
C
=
10
mA,
f=
10
0MHz
2 EMITTER
»
General Description
3
Epitaxial planar die construction
1
SOT-23
Plastic
Package.
2
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
»
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
45
V
5
V
0.5
A
P
C
Collector Power Dissipation
300
mW
R
ΘJA
T
J
,
T
stg
Thermal Resistance From Junction
T
o
A
mbient
Operation Junction And Storage
T
e
mperature Range
400
℃
/W
-55
~
+150
℃
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Parameter
Test conditions
I
C
=10µA, I
E
=0
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
50
45
5
I
C
=10mA, I
B
=0
I
E
=1µA, I
C
=0
V
V
V
CB
=45V, I
E
=0
V
EB
=4V, I
C
=0
100
100
600
nA
nA
I
EBO
Emitter cut-off current
h
FE
(1)
FE
(2)
DC current gain
(1)
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=500mA
100
40
h
DC current gain
(2)
V
CE(sat)
V
BE(sat)
C
ob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capactiance
0.7
1.2
V
V
I
C
=500mA, I
B
=50mA
V
CB
=10V, f=1MHz
10
pF
f
T
Transition frequency
V
CE
=5V, I
C
=10mA, f=100MHz
100
Revision 2018
1 /
4
BC817
»
Typical Performance Characteristics
(
(TJ = 25 °C, unless otherwise noted)
)
Revision 2018
2
/
4
BC817
»
Package Information
-SOT23
MILLIMETER
SYMBOL
MIN.
0.9
0
0.02
–
Typ
1.00
0.06
0.60
2.90
0.40
2.40
1.30
1.90
0.40
–
MAX
1.10
0.10
–
A
A1
A2
D
2.85
0.37
2.35
1.25
1.85
0.35
0
2.95
0.43
2.45
1.35
1.95
0.48
6
◦
b
E
E1
e
L
θ
»
Marking
Part No.
h
FE
BC817-16
BC817-25
BC817-40
100
~
250
160
~
400
250
~
600
Marking
6A
6B
6C
»
Ordering information
Order code
Package
Base qty
3
K
Deliverymode
BC817
SOT-23
Tape an
d
reel
Revision 2018
4
/
4
