ST-Semtech-MMFTN123K
| Part # | ST-Semtech-MMFTN123K |
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MMFTN123K
N-Channel Enhancement Mode MOSFET
Features
Drain
• Typical ESD Protection HBM Class 2
Classification
Voltage Range(V)
< 125
0A
0B
1A
1B
1C
2
Gate
125 to < 250
250 to < 500
500 to < 1000
1000 to < 2000
2000 to < 4000
4000 to < 8000
≥ 8000
1. Gate 2. Source 3. Drain
SOT-23
Plastic Package
Source
3A
3B
Applications
• Portable appliances
• Low switch appliances
Absolute Maximum Ratings (T
a
= 25
℃
unless otherwise specified)
Parameter
Symbol
V
DSS
V
GSS
I
D
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
100
± 20
V
200
mA
mA
mW
℃
Peak Drain Current, Pulsed
1)
Total Power Dissipation
Junction Temperature
I
DM
600
P
tot
500
T
j
150
Storage Temperature Range
T
stg
-55 to +150
℃
Thermal Characteristics
Parameter
Thermal Resistance from Junction to Ambient
2)
1)
Pulse Test: Pulse Width ≤
100
μs, Duty Cycle ≤ 2%
,Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
Symbol
R
θ
JA
Max.
250
Unit
℃
/W
2)
Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
®
Dated: 14/11/2020 Rev: 04
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MMFTN123K
Characteristics at T
a
= 25
℃
unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage
at I
D
= 250 µA
V
(BR)DSS
I
DSS
100
–
–
–
–
–
V
µA
µA
V
Drain-Source Leakage Current
at V
DS
= 80 V
–
–
1
Gate-Source Leakage Current
at V
GS
= ± 20 V
I
GSS
± 10
2.5
Gate-Source Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
V
GS(th)
1.5
Drain-Source On-State Resistance
at V
GS
= 10 V, I
D
= 190 mA
at V
GS
= 4.5 V, I
D
= 150 mA
R
DS(ON)
–
–
–
–
6
10
Ω
DYNAMIC PARAMETERS
Gate resistance
at V
DS
= 0 V, f = 1 MHz
R
g
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
38
39
–
–
–
–
–
–
Ω
Input Capacitance
at V
DS
= 50 V, f = 1 MHz
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Output Capacitance
at V
DS
= 50 V, f = 1 MHz
10
Reverse Transfer Capacitance
at V
DS
= 50 V, f = 1 MHz
6.6
1.5
0.5
0.6
6.5
7.5
10
Total Gate Charge
at V
GS
= 10 V, V
DD
= 30 V, I
D
= 1 A
Gate-Source Charge
at V
GS
= 10 V, V
DD
= 30 V, I
D
= 1 A
Q
gs
Q
gd
t
d(on)
t
r
Gate-Drain Charge
at V
GS
= 10 V, V
DD
= 30 V, I
D
= 1 A
–
–
Turn-On Delay Time
at V
DD
= 50 V, I
D
= 190 mA, V
GS
= 10 V, R
G
= 6
Ω
Turn-On Rise Time
at V
DD
= 50 V, I
D
= 190 mA, V
GS
= 10 V, R
G
= 6
Ω
–
–
–
Turn-Off Delay Time
at V
DD
= 50 V, I
D
= 190 mA, V
GS
= 10 V, R
G
= 6
Ω
t
d(off)
t
f
Turn-Off Fall Time
at V
DD
= 50 V, I
D
= 190 mA, V
GS
= 10 V, R
G
= 6
Ω
85
Body-Diode PARAMETERS
Drain-Source Diode Forward Voltage
at I
S
= 0.1 A, V
GS
= 0 V
V
SD
–
–
1.2
V
®
Dated: 14/11/2020 Rev: 04
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MMFTN123K
Electrical Characteristics Curves
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristic
Fig. 4 on-Resistance vs. Gate Voltage
Fig. 3 on-Resistance vs Drain Current
Fig. 5 on-Resistance vs.T
j
Fig. 6 Typical Forward Characteristic
®
Dated: 14/11/2020 Rev: 04
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MMFTN123K
Electrical Characteristics Curves
Fig. 8 Drain-Source Leakage Current vs. T
j
Fig. 7 Typical Junction Capacitance
Fig. 10 Gate Threshold Variation vs. T
j
Fig. 9 V
(BR)DSS
vs. Junction Temperature
Fig. 11 Safe Operation Area
®
Dated: 14/11/2020 Rev: 04
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MMFTN123K
Test Circuits
Fig.1-2 Switching Waveform
Fig.1-1 Switching times test circuit
Fig.2-2 Gate charge waveform
Fig.2-1 Gate charge test circuit
®
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MMFTN123K
Package Outline (Dimensions in mm)
SOT-23
Recommended Soldering Footprint
0.8
0.8
1.9
Packing information
Pitch
Reel Size
Tape Width
Package
Per Reel Packing Quantity
(mm)
mm
inch
0.157 ± 0.004
mm
178
inch
7
SOT-23
8
4 ± 0.1
3,000
Marking information
” VZ ” = Part No.
” YM ” = Date Code Marking
” Y ” = Year
VZ
” M ” = Month
Font type: Arial
®
Dated: 14/11/2020 Rev: 04
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