Tritech-MOS-TMN6030DF
| Part # | Tritech-MOS-TMN6030DF |
Download  | Tritech-MOS-TMN6030DF |
-Channel
N
Enhancement Mosfet
TMN6030DF
General Description
General Features
• Low R
DS(ON)
V
DS
= 60V
I
D
=30A
• RoHS and Halogen-Free Compliant
R
DS(ON)
mΩ
(
typ
.)@V
GS
=10V
=
28
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
DF:DFN3x3_8L
Marking 30N06
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
VDSS
Parameter
Drain-Source Voltage
Max.
Units
V
60
VGSS
Gate-Source Voltage
±20
V
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
30
A
I
D
@T
C
=25
℃
16
A
I
D
@T
C
=100
℃
IDM
74
A
IAS
Avalanche Current
13
22
A
EAS
Single Pulsed Avalanche Energy
Power Dissipation
mJ
W
31.3
P
D
@T
C
=25
℃
TJ, TSTG
Operating and Storage
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
-55 to +175
62.5
℃
R
θ
JA
R
θ
JC
℃
/W
℃
/W
4
1/5
-Channel
N
Enhancement Mosfet
TMN6030DF
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
Typ.
65
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
△
BVDSS/
△
TJ
—
0.044
28
—
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=15A
V/
℃
mΩ
—
36
RDS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=7A
—
1.2
—
38
1.6
-4.8
—
45
2.5
—
1
mΩ
V
VGS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
mV/
℃
—
V
DS
=48V , V
GS
=0V , T
J
=25
℃
IDSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
±100
—
V
DS
=48V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V , V
DS
=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
nA
S
V
DS
=5V , I
D
=15A
25.3
2.5
19
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Ω
Q
g
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
—
Q
gs
V
DS
=48V , V
GS
=10V , I
D
=15A
2.5
5
—
nC
ns
Q
gd
Td(on)
T
r
—
Turn-On Delay Time
Rise Time
2.8
16.6
21.2
5.6
1027
65
—
—
V
DD
=30V , V
GS
=10V , R
G
=3.3Ω
I
D
=15A
Td(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
Coss
Crss
I
S
Input Capacitance
—
Output Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
—
pF
Reverse Transfer Capacitance
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
46
—
—
20
40
1.2
—
A
A
V
G
=V
D
=0V , Force Current
ISM
VSD
t
rr
—
—
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
IF=15A , dI/dt=100A/µs ,
12.2
7.3
nS
nC
T
J
=25
℃
Q
rr
—
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width .The EAS data shows Max. rating .
3
、
The test cond
≦
300us
duty cycle
≦
2%
,
duty cycle ition is TJ =25
℃
, VDD =48
V
,
V
G =10
V
,
R
G =25Ω, L=0.1mH, IAS =13A
4
、
The power dissipation is limited by 175
℃
junction temperature
5
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2/5
-Channel
N
Enhancement Mosfet
TMN6030DF
Typical Characteristics
3/5
-Channel
N
Enhancement Mosfet
TMN6030DF
4/5
_
8L
Package Mechanical Dat
a
:
DFN3x3
Common
mm
Symbol
Mim
0.70
/
Nom
0.75
/
Max
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
K
L
L1
t
Φ
10
5/5
