Foshan-Blue-Rocket-Elec-2SD669AD

Part #	Foshan-Blue-Rocket-Elec-2SD669AD
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2SD669AD

Rev.E May.-2016

D

A

TA SHEET

描述

/ Descriptions

TO-252 塑封封装 NPN 半导体三极管。

Silicon NPN transistor in a TO-252 Plastic Package.

特征

/ Features

与 2SB649AD 互补。

Complementary pair with 2SB649AD.

用途

/ Applications

用于低频功率放大。

Low frequency power amplifier.

内部等效电路

/ Equivalent

Circuit

引脚排列

/ Pinning

4

1

2

3

PIN1

：

Base

PIN 2,4

：

Collector

PIN 3

：

Emitter

放大及印章代码

/ h

FE

Classifications & Marking

h

_{FE
Classifications}

B

C

D

Symbol

h

FE

Range

60

～

120

100

～

200

160

～

320

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2SD669AD

Rev.E May.-2016

D

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TA SHEET

极限参数

/ Absolute

Maximum Ratings(Ta=25

℃

)

参数

Parameter

符号

Symbol

V

CBO

数值

Rating

180

单位

Unit

V

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V

CEO

V

EBO

I

C

160

5.0

V

V

Collector Current – Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

1.5

A

I

CP

3.0

A

P

C

1.0

W

W

℃

℃

P

C

(

T

c

=25

℃

)

10

T

j

150

T

stg

Storage Temperature Range

-55

～

150

电性能参数

/ Electrical

Characteristics(Ta=25

℃

)

参数

符号

测试条件

最小值典型值最大值

单位

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Symbol

T

e

st Conditions

Min

Typ

Max

Unit

V

CBO

I

C

=1.0mA

I

C

=10mA

I

E

=0

180

V

R

BE

=

∞

V

V

CEO

160

5.0

Emitter to Base Breakdown Voltage

V

EBO

I

E

=1.0mA

I

C

=0

V

Collector Cut-Off Current

I

CBO

V

CB

=160V

I

E

=0

10

μ

A

h

FE(1)

V

CE

=5.0V

h

FE(2)

V

CE

=5.0V

I

C

=150mA

I

C

=500mA

I

C

=150mA

60

30

320

DC Current Gain

Base to Emitter Voltage

V

BE

V

CE

=5.0V

1.5

1.0

V

V

Collector to Emitter Saturation

Voltage

V

CE(sat)

I

C

=500mA

I

B

=50mA

Transition Frequency

f

T

V

CE

=5.0V

I

C

=150mA

I

E

=0

140

14

MHz

pF

V

CB

=10V

f=1.0MHz

Collector output capacitance

C

ob

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2SD669AD

Rev.E May.-2016

D

A

TA SHEET

电参数曲线图

/ Electrical

Characteristic Curve

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2SD669AD

Rev.E May.-2016

D

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TA SHEET

外形尺寸图

/ Package

Dimensions

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2SD669AD

Rev.E May.-2016

D

A

TA SHEET

印章说明

/ Marking

Instructions

BR

D669AD

B

****

说明：

BR

：

为公司代码

D669AD：为型号代码

B:

为

h

FE

分档代码

****：

Note:

为生产批号代码，随生产批号变化。

BR:

Company Code

D669AD:

Product Type.

B:

h

FE

Classifications Symbol

Lot No. Code, code change with Lot No.

****:

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2SD669AD

Rev.E May.-2016

D

A

TA SHEET

回流焊温度曲线图

(

无铅

) /

Temperature Profile for IR Reflow Soldering(Pb-Free)

说明：

Note:

1

、预热温度

25

～

150

℃，时间

60

～

90sec;

2

、峰值温度

245

±

5

℃，时间持续为

5

±

0.5sec;

3

、焊接制程冷却速度为

2

～

10

℃

/sec.

1.Preheating:25~150

℃

, Time:60~90sec.

2.Peak

T

e

mp.:245

±

5

℃

, Duration:5

±

0.5sec.

3. Cooling Speed: 2~10

℃

/sec.

耐焊接热试验条件

/ Resistance

to Soldering Heat Test Conditions

温度：

260

±

5

℃

时间：

10

±

1 sec.

T

e

mp.:260±5

℃

Time:10±1 sec

包装规格

/ Packaging

SPEC.

卷盘包装

/ REEL

Package Type

Units

包装数量

Dimension

包装尺寸

(unit

：

mm

3

)

Units/Reel

Reels/Inner Box

Units/Inner Box

Inner Boxes/Outer Box

Units/Outer Box

封装形式

Reel

Inner Box

盒

Outer Box

箱

只

/

卷盘

卷盘

/

盒

只

/

盒

盒

/

箱

只

/

箱

TO-252

2,500

2

5,000

5

25,000

13

〞

×16

360×360×50

385×257×392

套管包装

/ TUBE

Units

包装数量

Dimension

包装尺寸

(unit

：

mm

3

)

Package Type

Units/Tube

封装形式

Tubes/Inner Box

套管

/

盒

Units/Inner Box

Inner Boxes/Outer Box

Units/Outer Box

Tube

套管

Inner Box

盒

Outer Box

箱

只

/

套管

只

/

盒

盒

/

箱

只

/

箱

TO-251/252

75

48

3,600

5

18,000

526×20.5×5.25 555×164×50

575×290×180

使用说明

/ Notices

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