Minos-MDT35P10D

MDT35P10D  

Silicon P-Channel Power MOSFET  

Description  

The MDT35P10D uses advanced technology and design to provide  

excellent R

DS(ON)

. It can be used in a wide variety of applications.  

General Features  









V

DS

=-110V, I

D

=-35A  

Low ON Resistance  

Low Reverse transfer capacitances  

100% Single Pulse avalanche energy Test  

Application  





Power switching application  

Adapter and charger  

Electrical Characteristics

@ Ta=25

℃

(unless otherwise specified)  

a) Absolute

 

Maximum Ratings:  

Symbol  

Parameter  

Drain-to-Source Breakdown Voltage  

Drain Current (continuous) at Tc=25

℃  

Drain Current (pulsed)  

Value  

Units  

V

V

DSS  

-110  

-35  

I

D  

A

I

DM  

GS  

tot  

-120  

+/-20  

180  

A

V

Gate to Source Voltage  

V

P

W

℃

mJ  

Total Dissipation at Tc=25

℃  

Max. Operating Junction Temperature  

Single Pulse Avalanche Energy  

T

j

175  

E

AS  

700  

SHENZHEN MINOS TECHOLOGY CO.,LTD  

1/2  

版本号：

A01  

MDT35P10D  

b) Electrical

 

Parameters:  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Unit  

Drain-source Voltage  

V

DS  

-100  

V

V

D

Static Drain-to-Source  

on-Resistance  

R

DS(on)  

V

=-250

µ

A  

V

DS

=-110V, V

GS

= 0V  

D

=-15A  

26  

32  

mΩ  

V

V

GS(th)  

Gated Threshold Voltage  

-1.0  

-2.0  

-3.0  

-1.0  

V

DS

=V

GS,  

I

D  

Drain to Source leakage  

Current  

I

DSS  

µ

A  

Gated Body Foward  

Leakage  

I

GSS(F)  

GSS(R)  

V

100  

nA  

nA  

Gated Body Reverse  

Leakage  

I

V

-100  

C

iss  

Input Capacitance  

Output Capacitance  

Reverse Transfer  

Capacitance  

2315  

190  

pF  

pF  

V

C

oss  

V

DS

=25V,  

f=1.0MHZ  

C

rss  

11  

pF  

c) Switching

 

Characteristics  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Unit  

t

d(on)  

Turn-on Delay Time  

28  

nS  

t

r  

t

d(off)  

t

f  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

21  

62  

32  

40  

9.2  

14  

nS  

nS  

nS  

nC  

nC  

nC  

V

DD

=-20V,I

D

=-16A,  

R

G

=10

Ω  

Q

g  

V

DS

=-20V  

I

D

=-16A  

Q

gs  

Q

gd  

V

GS

=-10V  

d) Source-Drain

 

Diode Characteristics  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Unit  

I

SD  

S-D Current(Body Diode)  

-35  

A

I

SDM  

Pulsed S-D Current(Body Diode)  

Diode Forward Voltage  

-140  

-1.5  

A

V

SD  

V

GS

=0V, I

DS

=-35A  

V

t

rr  

Reverse Recovery Time  

555  

T

J

=25

℃

,I

F

=-35A  

nS  

µ

C  

di/dt=100A/us  

Q

rr  

Reverse Recovery Charge  

4550  

*Pulse Test: Pulse Width <= 300

µ

s, Duty Cycle< =2%  

Symbol  

R

θJC  

Parameter  

Typ  

2.5  

Units  

Junction-to-Case  

℃

/W  

SHENZHEN MINOS TECHOLOGY CO.,LTD  

2/2  

版本号：

A01