YFW-BSS84
| Part # | YFW-BSS84 |
| Download | YFW-BSS84 |
BSS84 SOT-23
■
P-Channel MOSFET
3
■
Features
2
●
Energy efficient
1.GATE
2.SOURCE
●
Low threshold voltage
3.DRAIN
1
High-speed switching
●
●
Miniature surface mount package saves board
space
■
Simplified outline(SOT-23)
●
ESD protected(HBM) up to 2KV
D
G
MARKING
■
Marking
PD
S
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
-V
DS
50
V
Gate-Source Voltage
V
GS
-I
D
±20
0.13
0.52
V
A
Continuous Drain Current
Pulsed Drain Current
Note1
Power Dissipation
@tp
<
10μs
-I
DM
P
D
225
mW
°C
Junction and Storage
T
emperature Range
T
J
, T
STG
150, -55 to 150
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient
Note2
R
θJA
556
°C/W
GuangDong YFW Electronics Co, Ltd.
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BSS84 SOT-23
■
Electrical Characteristics Ta = 25
℃
Parameter Symbol
Static Parameters
Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
-BV
DSS
-I
D
=250µA, V
GS
=0V
50
—
—
—
—
1
V
-V
DS
=50
V
,
V
GS
=0V
-I
DSS
µA
-V
DS
=25
V
,
V
GS
=0V
—
—
—
1
0.1
5
µA
µA
V
Gate-Body Leakage Current
Gate Threshold Voltage
Note3
I
GSS
V
DS
=0
V
,
V
GS
=±20V
-V
GS(th)
V
DS
=V
GS
, -I
D
=250µA
0.9
1.3
2
-V
GS
=10
V
,
–
I
D
=0.1A
R
DS(ON)
—
—
—
1.7
1.9
—
8
Ω
Ω
V
Static Drain-Source On-Resistance
Note3
-V
GS
=5
V
,
–
I
D
=0.1A
10
1.2
Body Diode Forward Voltage
Dynamic Parameters
-V
SD
-I
S
=0.13A, V
GS
=0V
Forward Transconductance
Note3
g
FS
-V
DS
=25
V
,
–
I
D
=0.1A
50
—
—
mS
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
30
10
5
—
—
—
pF
pF
pF
V
GS
=0
V
,
–
V
DS
=5
V
,
f
=1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Turn-On DelayTime
t
D(on)
t
r
t
D(off)
t
f
—
—
—
—
2.5
1
—
—
—
—
ns
ns
ns
ns
-V
DD
=15
V
,
R
L
=50Ω,
-I
D
=2.5A
Turn-On Rise Time
Turn-Off DelayTime
16
8
Turn-Off Fall Time
Source-Drain Diode characteristics
Diode forward current
Diode pulsed forward current
-I
S
—
—
—
—
0.13
0.52
A
A
-I
SM
Notes:
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t
≤
10s.
3. Pulse
T
e
st : Pulse Width
≤
300μs, Duty Cycle
≤
2%.
GuangDong YFW Electronics Co, Ltd.
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BSS84 SOT-23
Transfer Characteristics
Output Characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-1.6
-1.2
-0.8
-0.4
0.0
V
DS
=-10V
Pulsed
T
a
=25
℃
V
GS
=-10V
V
GS
=-5V
Pulsed
V
GS
=-4.5V
V
GS
=-3V
V
GS
=-2V
T
a
=125℃
T
a
=25℃
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
0
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE V
GS
(V)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
R
DS(ON)
– V
GS
R
DS(ON)
I
D
12
5
Pulsed
T
a
=25
℃
I
D
=-0.1A
Pulsed
10
8
4
3
2
1
0
V
GS
=-5V
6
4
V
GS
=-10V
T
a
=125℃
T
a
=25℃
2
0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
Threshold Voltage
I
S
– V
SD
-1.5
-1.0
-0.5
0.0
-1
Pulsed
–
0.1
I
D
=-250uA
T
a
=125℃
T
a
=25℃
–
0.01
–
1E-3
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE V
SD
(V)
JUNCTION TEMPERATURE T
j
(
℃
)
GuangDong YFW Electronics Co, Ltd.
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BSS84 SOT-23
SOT-23
Package Outline
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w
M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
Summary of Packing Options
Package
SOT-23
Packing Description
Tape/Reel,7”reel
Packing Quantity
3000
Industry Standard
EIA-481-1
GuangDong YFW Electronics Co, Ltd.
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