JSMSEMI-S9012
| Part # | JSMSEMI-S9012 |
| Download | JSMSEMI-S9012 |
S9012
PNP Silicon Epitaxial Planar Transistor
FEATURES
High Collector Current.(I
C
= -500mA
)
Complementary
T
o
S
9013.
Excellent H
FE
Linearity.
APPLICATIONS
High Collector Current.
SOT-23
MAXIMUM RATING
@
T
a
=2
unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
-40
V
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-5
0
mA
mW
℃
P
C
300
Junction and Storage Temperature
T
J,
T
STG
-55 to +150
第1/4页
S9012
PNP Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Parameter
Symbol Test
conditions
MIN
TYP MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-100μA,I
E
=0
-40
V
V
V
V
(BR)CEO
V
(BR)EBO
I
C
=-1mA,I
B
=0
-25
-5
I
E
=-100μA,I
C
=0
I
CBO
V
CB
=-40V,I
E
=0
V
CE
=-20V,I
B
=0
V
EB
=-5V,I
C
=0
-0.1
-0.1
-0.1
400
-0.6
-1.2
μA
μA
μA
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
DC current gain
h
FE
V
CE
=-1V,I
C
=-50mA
120
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
I
C
=-500mA, I
B
= -50mA
V
CE(sat)
V
BE(sat)
V
V
I
C
=-500mA, I
B
= -50mA
V
CE
=-6V, I
C
= -20mA
f=30MHz
Transition frequency
f
T
MHz
pF
Collector output capacitance
V
CB
=-10V,I
E
=0,f=1MHz
ob
5
CLASSIFICATION OF h
FE(1)
Rank
L
H
J
Range
120-200
200-350
2T1
300-400
MARKING
第2/4页
S9012
PNP Silicon Epitaxial Planar Transistor
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
第3/4页
S9012
PNP Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.70
1.10
0.90
0.30
0.35
1.80
0.02
0.05
2.20
Max
3.10
1.50
1.10
0.50
0.48
2.00
0.10
0.15
2.60
E
K
B
B
C
D
E
J
D
G
H
J
G
H
C
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
Unit : mm
0.80
PACKAGE INFORMATION
Device
S9012
Package
SOT-23
Shipping
3000/
T
a
pe&Reel
第4/4页
