BORN-FMMT491

F

MMT

491  

N

PN Plastic-Encapsulate Transistor  

»

Pin Configurations  

»

Feature

s

 

V

3 COLLECTOR  

I

C

=

1

A  

1 BASE  

f

T

=

1

50

MHZ

@

V

CE

=

1

0

V

,

I

C

=

50

mA,

f=

100MHz  

2 EMITTER  

»

General Description  

3





Epitaxial planar die construction  

SOT-23

Plastic

Package.  

1

2

Absolute Maximum Ratings

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

80  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

60  

V

5

V

1

A

Peak Pulse Current  

2

A

I

CM  

Collector Power Dissipation  

250  

500  

mW  

P

C  

Thermal Resistance From Junction

T

o

A

mbient  

R

ΘJA  

T

J

,

T

stg  

℃

/W  

Operation Junction And Storage

T

e

mperature Range  

-55

～

+150  

℃

Electrical Characteristics

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

Parameter  

Test conditions  

I =100µA,

 

I =0  

Min  

80  

60  

5

Typ  

Max  

Unit  

V

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

C

E

I =10mA,

 

I =0  

V

C

B

I =100µA,

 

I =0  

V

E

C

V

=60V, I

 

=0  

100  

100  

nA  

nA  

CB  

E

I

EBO  

Emitter cut-off current  

V

=4V, I

 

=0  

C

EB  

h

FE

(1)  

h

FE

(2)  

h

FE

(3)  

h

FE

(4)  

DC current gain(1)  

V

=5V, I

 

=1mA  

100  

100  

80  

CE  

C

DC current gain(2)  

V

=5V, I

 

=500mA  

300  

CE  

C

DC current gain(3)  

V

V

=5V, I

 

=1A  

C

CE  

CE  

DC current gain(4)  

=5V, I

 

=2A  

30  

C

V

CE(sat)  

V

CE(sat)  

1

2

Collector-emitter saturation voltage  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Base-emitter voltage  

I =500mA,

 

I =50mA  

0.25  

0.5  

1.1  

1

V

V

C

B

I =1A,

 

I =100mA  

C

B

V

BE(sat)  

V

BE  

f

T  

I =1A,

 

I =100mA  

V

C

B

V

=5V, I

 

=1A  

V

CE  

C

Transition frequency  

V

=10V, I

 

=50mA, f=100MHz  

C

150  

CE  

C

ob  

Collector output capacitance  

VCB=10V,f=1MHz  

Revision 2018  

1 /

4

 

F

MMT

491  

»

Typical Performance Characteristics

（

(TJ = 25 °C, unless otherwise noted)

）  

Revision 2018  

2

/

4

 

F

MMT

491  

Revision 2018  

3

/

4  

F

MMT

491  

»

Package Information

 

SOT

–

23  

MILLIMETER  

Typ  

SYMBOL  

MIN.  

0.9

0

 

0.02  

–

MAX  

1.10  

0.10  

–

A

A1  

A2  

D

1.00  

0.06  

0.60  

2.90  

0.40  

2.40  

1.30  

1.90  

0.40  

–

2.85  

0.37  

2.35  

1.25  

1.85  

0.35  

0

2.95  

0.43  

2.45  

1.35  

1.95  

0.48  

6

◦  

b

E

E1  

e

L

θ

»

Marking  

491  

»

Ordering information  

Order code  

Package  

SOT-23  

Base qty  

3

K

 

Deliverymode  

F

MMT

491  

Tape an

d

reel  

Revision 2018  

4

/

4