CBI-MMBT3904T
| Part # | CBI-MMBT3904T |
Download  | CBI-MMBT3904T |
SOT-523 Plastic-Encapsulate Transistors
MMBT3904T
TRANSISTOR (NPN)
FEATURES
SOT
–
523
Complementary to MMBT3906T
Small Package
MARKING:1N
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
1. BASE
Collector-Base Voltage
60
2. EMITTER
3. COLLECTOR
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
6
V
Collector Current
200
150
833
mA
mW
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
P
C
R
ΘJA
T
j
℃
/W
℃
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
60
40
6
Typ
Max
Unit
V
V
(BR)CBO
I
C
=10µA, I
E
=0
V
(BR)CEO
I
C
=1mA, I
B
=0
V
(BR)EBO
I
E
=10µA, I
C
=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
I
CEX
I
EBO
V
CE
=30
V
, V
EB(off)
=3V
50
nA
V
EB
=5
V
,
I
C
=0
100
nA
Emitter cut-off current
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
V
CE
=1
V
,
I
C
=0.1mA
40
70
V
CE
=1
V
,
I
C
=1mA
DC current gain
V
CE
=1
V
,
I
C
=10mA
100
60
300
V
CE
=1
V
,
I
C
=50mA
I
C
=10mA, I
B
=1mA
0.2
0.3
V
V
V
CE(sat)
Collector-emitter saturation voltage
Collector-emitter saturation voltage
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
0.65
300
0.85
0.95
V
V
BE(sat)
I
C
=50mA, I
B
=5mA
V
f
T
V
CE
=20
V
,
I
C
=10mA, f=100MHz
V
CB
=5
V
,
I
E
=0, f=1MHz
V
EB
=0.5
V
,
I
C
=0, f=1MHz
V
CC
=3V, V
BE(off)
=-0.5V I
C
=10mA,
I
B1
=1mA
MHz
pF
pF
Transition frequency
C
ob
C
ib
4
8
Collector output capacitance
Base input capacitance
t
d
t
r
35
35
ns
ns
Delay time
Rise time
V
CC
=3V, V
BE(off)
=-0.5V I
C
=10mA,
I
B1
=1mA
t
s
t
f
V
CC
=3V, I
C
=10mA, I
B1
= I
B2
=1mA
V
CC
=3V, I
C
=10mA, I
B1
= I
B2
=1mA
200
50
ns
ns
Storage time
Fall time
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