HUAYI-HYG080N10LS1D
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HYG080N10LS1D
Single N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/62A
R
DS(ON)
= 7.6m
Ω
(typ.) @ V
GS
= 10V
R
DS(ON)
= 11.1m
Ω
(typ.) @ V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
(RoHS Compliant)
TO-252-2L
Applications
High Frequency Point-of-Load Synchronous Buck Converter
Single N-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
D
G080N10
XYMXXXXXX
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HYG080N10LS1D
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
V
V
100
±
20
Gate-Source Voltage
Junction
T
e
m
perature
°C
°C
A
-55 to 175
-55 to 175
62
T
STG
I
S
Storage
T
e
m
perature Range
Source Current-Continuous(Body Diode)
T
c
=25°C
T
c
=25°C
Mounted on Large Heat Sink
A
I
DM
Pulsed Drain Current *
220
62
T
c
=25°C
A
A
I
D
Continuous Drain Current
T
c
=100°C
44
T
c
=25°C
W
W
72
P
D
Maximum Power Dissipation
T
c
=100°C
36
R
θ
J
C
R
θ
J
A
E
AS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
2.1
110
130
L=0.3mH
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
** Surface
mounted on FR-4 board.
*** Limited
by T
J
max , starting T
J
=25°C
, L =
0.3mH
,
V
D
S
=80V
.,
V
GS
=10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HYG080N10LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
100
–
–
–
1
V
V
DS
=
100V,
V
GS
=0V
–
μ
A
μ
A
V
I
DSS
Drain-to-Source Leakage Current
T
J
=100°C
–
–
50
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20V,V
DS
=0V
V
GS
=10V,I
DS
=20A
V
GS
=4.5V,I
DS
=20A
V
GS(th)
I
GSS
Gate Threshold Voltage
1.0
2.1
–
3.0
±
100
9.1
13.3
Gate-Source Leakage Current
–
–
–
nA
m
Ω
m
Ω
7.6
11.1
R
DS(ON)
*
Drain-Source On-State Resistance
Diode Characteristics
Diode Forward Voltage
I
SD
=20A,V
GS
=0V
–
–
–
0.86
41.9
51.9
1.3
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=20A,dI
SD
/dt
=100A/
μs
Q
rr
V1.0
2
HYG080N10LS1D
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HYG080N10LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
R
G
Gate Resistance
Input Capacitance
Output Capacitance
–
–
–
2.7
–
–
–
Ω
V
GS
=0V
,
V
DS
=0V,F=1MHz
C
iss
2108
V
GS
=
0V
,
C
oss
C
rss
t
d(ON)
T
r
V
DS
=
25V
,
766
62
pF
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
–
–
–
–
–
–
–
–
–
10.3
29.0
29.3
54.6
V
DD
=50V,
R
G
=
2.5
Ω,
ns
I
DS
=20A,V
GS
=10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
Gate Charge
Characteristics
Q
g
（
10V
）
Q
g
（
4.5V
）
Q
gs
Total Gate Charge
Total Gate Charge
–
–
–
–
–
–
–
–
34.2
17.4
8.8
V
DS
=80V, V
GS
=10V,
I
D
=20A
nC
Gate-Source Charge
Gate-Drain Charge
Q
gd
7.4
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V1.0
3
HYG080N10LS1D
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
e
mperature(
℃
)
T
c
-Case
T
e
mperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HYG080N10LS1D
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
e
m
perature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HYG080N10LS1D
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
V1.0
6
HYG080N10LS1D
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Reel
Quantity
75
TO-252-2L
2500
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
–
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
–
1.28
1.00
1.95
8°
–
1.65
0°
1.80
–
V1.0
7
HYG080N10LS1D
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
8
HYG080N10LS1D
T
a
ble 1.SnPb Eutectic Process – Classification
T
e
m
peratures (
T
c
)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
T
a
ble 2.Pb-free Process – Classification
T
e
m
peratures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
PRECON
HTRB
JESD-22, B102
JESD-22, A113
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
30°C/60%/192Hrs
168Hrs//500Hrs/1000Hrs, Bias @ 150°C
168 Hrs/500Hrs/1000Hrs, V
gs
100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
HTGB
PCT
TCT
500 Cycles, -55°C~150°C
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
9
