onsemi-FDMS8320L
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FDMS8320
L
N-Channel PowerTrench
®
MOSFET
40 V, 248 A, 1.1 m
Ω
General Description
This N-Channel MOSFET
has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed ang body
diode reverse recovery performance.
Features
Max r
DS(on)
= 1.1 m
Ω
at V
GS
= 10 V, I
D
= 32 A
Max r
DS(on)
= 1.5 m
Ω
at V
GS
= 4.5 V, I
D
= 27 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
Applications
Next generation enhanced body diode technology,
engineered for soft recovery
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
MSL1 robust package design
100% UIL tested
RoHS Compliant
Bottom
Top
Pin 1
S
S
D
D
D
D
S
S
G
S
S
G
Pin 1
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted.
Symbol
V
DS
V
GS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
V
V
±20
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
248
157
I
D
A
-Continuous
36
-Pulsed
943
E
AS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
264
mJ
W
T
C
= 25 °C
T
A
= 25 °C
104
P
D
(Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS8320L
FDMS8320L
Power 56
3000 units
©2012
Semiconductor Componets Industries, LLC.
August-2017,
Rev
.
2
Publication Order Number:
FDMS8320L/D
Electrical Characteristics
T
J
= 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
40
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
21
mV
/
°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 32 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.7
-6
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V, I
D
= 32 A
0.8
1.0
1.2
206
1.1
1.5
1.7
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5 V, I
D
= 27 A
m
Ω
V
GS
= 10 V, I
D
= 32 A, T
J
= 125 °C
V
DS
= 5 V, I
D
= 32 A
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
8350
2840
169
11110
3780
295
pF
pF
pF
Ω
V
DS
= 20 V, V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
0.1
1.3
2.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
17
19
30
35
ns
ns
V
DD
= 20 V, I
D
= 32 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
68
110
30
ns
17
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
121
58
170
117
nC
nC
nC
nC
Q
g
V
GS
= 0 V to 4.5 V
V
DD
= 20 V,
I
D
= 32 A
Q
gs
Q
gd
19.2
16.5
Drain-Source Diode Characteristics
I
s
Diode Continuous Forward Current
Diode Pulse Current
T
C
= 25 °C
T
C
= 25 °C
248
943
1.1
1.2
108
95
A
A
I
s, pu
l
se
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
(Note 2)
0.65
0.74
68
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 32 A
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
I
F
= 32 A, di/dt = 100 A/
μ
s
Q
rr
t
rr
59
53
85
I
F
= 32 A, di/dt = 300 A/
μ
s
Q
rr
104
167
nC
Notes
:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user’s board design.
θ
JA
θ
CA
a)
50 °C/W when mounted
on a
1 in
pad of
2 oz
copper
b) 125
°C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25
°
C; N-ch: L = 0.3 mH, I
= 42 A, V
= 36 V, V
= 10 V.
J
AS
DD
GS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
150
5
4
3
2
1
0
V
GS
= 10 V
V
GS
= 4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
GS
= 4 V
120
V
GS
= 3.5 V
V
GS
= 3 V
90
V
GS
= 3.5 V
60
30
PULSE DURATION = 80
μ
s
V
GS
= 10 V
120 150
V
GS
= 4.5 V
V
GS
= 4 V
DUTY CYCLE = 0.5% MAX
0
0
30
60
90
0
0.2
0.4
0.6
0.8
1.0
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 32 A
I
D
= 32 A
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS
= 10 V
4
3
2
1
0
T
J
= 125
o
C
T
J
= 25
o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figur
e
4
. On-Resistance
vs. Gate to
Source Voltage
150
1000
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
10
120
90
60
30
0
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 150
o
C
1
T
J
= 25
o
C
T
J
= 25
o
C
0.1
0.01
0.001
T
J
= -55
o
C
T
J
= -55
o
C
1.0
1.5
2.0
2.5
3.0
3.5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs. Source Current
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
10
30000
10000
I
D
= 32 A
8
C
iss
V
DD
= 20 V
C
oss
6
1000
100
10
V
DD
= 16 V
V
DD
= 24 V
4
2
0
C
rss
f = 1 MHz
GS
= 0 V
V
0
25
50
75
100
125
0.1
1
10
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s . D r a i n
to Source Voltage
250
200
150
100
50
200
100
10
1
V
GS
= 10 V
T
J
= 25
o
C
T
J
= 100
o
C
V
GS
= 4.5 V
T
J
= 125
o
C
R
θ
JC
= 1.2
o
C/W
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
T
C
, CASE
TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs.
Case Temperature
20000
2000
1000
SINGLE PULSE
R
θ
JC
= 1.2
o
C/W
10000
T
C
= 25
o
C
10 us
100
10
1
THIS AREA IS
LIMITED BY r
DS(on)
100 us
1 ms
1000
SINGLE PULSE
T
J
= MAX RATED
10 ms
DC
R
θ
JC
= 1.2
o
C/W
C
= 25
o
C
100
50
CURVE BENT TO
MEASURE DATA
T
0.1
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
1
10
100 200
t, PULSE WIDTH (sec)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
SINGLE PULSE
Z
θ
JC
θ
JC
o
R
= 1.2
C/W
θ
JC
Peak T
= P
x Z
(t) + T
J
DM
θ
JC C
Duty Cycle, D = t
/ t
1
2
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13.
Transient Thermal Response Curve
5
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