Diodes-Incorporated-DMP3099LQ-13

DMP3099LQ  

P-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features and Benefits  

















Low Gate Threshold Voltage  

I

D

max  

BV

DSS  

R

DS(ON)

max  

Low Input Capacitance  

T

A

= +25°C  

Fast Switching Speed  

65m

Ω @ V

GS

= -10V  

99m

Ω @ V

GS

= -4.5V  

-3.8A  

-3.0A  

Low Input/Output Leakage  

-30V  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note

3)  

Qualified to AEC-Q101 Standards for High Reliability  

PPAP Capable (Note 4)  

Description and Applications  

This MOSFET is designed to meet the stringent requirements of  

Automotive applications. It is qualified to AEC-Q101, supported by a  

PPAP and is ideal for use in:  

Mechanical Data  





Case: SOT23  

Case Material: Molded Pla

stic, “Green” Molding Compound. UL  

Flammability Classification Rating 94V-0  







Backlighting  





Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish



Matte Tin Annealed over Copper Leadframe.  

Power Management Functions  

DC-DC Converters  

e3  

Solderable per MIL-STD-202, Method 208  

Terminal Connections: See Diagram  

Weight: 0.009 grams (Approximate)  





SOT23  

D

S

D

G

S

G

Top View  

Pin Configuration  

Top View  

Equivalent Circuit  

Ordering Information

(Note 5)  

Part Number  

DMP3099LQ

-7  

DMP3099LQ

-13  

Case  

SOT23  

SOT23  

Packaging  

3000/Tape & Reel  

10000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

for more information about Diodes Incorporated’s definitions of Hal

ogen- and Antimony-free, “Green”  

and Lead-free.  

3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

Marking Information  

D99 = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: E = 2017)  

D99  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2016  

2017  

2018  

2019  

2020  

2021  

2022  

2023  

Code  

D

E

F

G

H

I

J

K

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

DMP3099LQ  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

-30  

Unit  

V

Gate-Source Voltage  

±20  

V

V

GSS  

Steady  

State  

T

A

= +25°C  

T

A

= +70°C  

-3.8  

-2.9  

A

A

Drain Current (Note 6) V

GS

= -10V  

Pulsed Drain Current (Note 7)  

I

D  

-11  

I

DM  

I

AS  

E

AS  

Thermal Characteristics  

Characteristic  

Total Power Dissipation (Note 6)  

Symbol  

P

D  

Value  

1.08  

Unit  

W

115  

°C/W  

°C  

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)  

Operating and Storage Temperature Range  

R

θ

JA  

-55 to +150  

T

J,

T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 8)  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

-30  

—

—

—

—

—

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

-800  

±100  

nA  

nA  

V

DS

= -30V, V

GS

= 0V  

V

GS

= ±20V, V

DS

= 0V  

—

I

GSS  

ON CHARACTERISTICS (Note 8)  

Gate Threshold Voltage  

-1.0  

—

—

-2.1  

V

V

GS(TH)  

R

DS(ON)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -3.8A  

V

GS

= -4.5V, I

D

= -3.0A  

V

DS

= -5V, I

D

= -2.7A  

V

GS

= 0V, I

S

= -2.7A  

65  

99  

Static Drain-Source On-Resistance  

—

m

Ω  

Forward Transfer Admittance  

Diode Forward Voltage  

—

—

3.6  

—

S

V

|Y

fs

|  

V

SD  

—

-1.26  

DYNAMIC CHARACTERISTICS (Note 9)  

Input Capacitance  

—

—

—

—

563  

48  

—

—

—

—

pF  

pF  

pF  

Ω

C

iss  

C

oss  

C

rss  

R

G  

V

DS

= -25V, V

GS

= 0V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

41  

10.3  

V

GS

= 0V, V

DS

= 0V, f = 1MHz  

SWITCHING CHARACTERISTICS (Note 9)  

V

DS

= -15V, V

GS

= -4.5V,  

I

D

= -3.8A  

—

5.2  

—

Total Gate Charge  

Q

g  

—

—

—

—

—

—

—

11  

1.7  

1.9  

4.8  

5.0  

31  

—

—

—

—

—

—

—

nC  

ns  

V

DS

= -15V, V

GS

= -10V,  

I

D

= -3.8A  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

Q

gs  

Q

gd  

t

D(ON)  

t

R  

V

DS

= -15V, V

GS

= -10V,  

I

D

= -1A, R

G

= 6.0Ω  

Turn-Off Delay Time  

Fall Time  

t

D(OFF)  

t

F  

15  

Notes:  

6. Device mounted on FR-4 PCB on 2 oz., 0.5 inch

2

copper pads and t

≤

5 sec.  

7. Pulse width

≤

10µs, Duty Cycle

≤

1%.  

8. Short duration pulse test used to minimize self-heating effect.  

9. Guaranteed by design. Not subject to production testing.  

2 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

DMP3099LQ  

20.0  

16.0  

12.0  

8.0  

20  

16  

12  

8

T

= 85°C  

V

= -10V  

A

GS  

V

= -5.0V  

DS  

T

= 150°C  

A

T

= 25°C  

A

V

= -4.0V  

GS  

T

= 125°C  

A

V

= -4.5V  

)

GS  

A

(

)

T

= -55°C  

A

T

N

A

(

T

N

E

R

R

U

C

E

R

R

U

C

N

I

A

N

R

I

A

D

R

,

D

I

D  

V

= -3.0V  

GS  

–

,

I

D  

4

4.0  

V

= -2.5V  

GS  

V

= -2.0V  

GS  

0

0.0  

0

1

2

3

4

5

6

0

1

2

3

4

5

-V

GS

, GATE-SOURCE VOLTAGE (V)  

Figure 2

 

Typical Transfer Characteristics  

-V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 1 Typical Output Characteristics  

1

0.4  

0.35  

0.3  

)

)





V

= -4.5V  

GS  

(

(

E

C

N

E

C

N

A

T

S

A

T

S

I

I

S

S

T

= 150°C  

E

A

E

R

R

0.25  

0.2  

–

–

N

N

O

O

T

= 125°C  

E

C

R

U

O

S

A

E

C

R

U

O

S

0.1  

V

= -4.5V  

GS  

T

= 85°C  

A

0.15  

0.1  

–

–

N

N

I

I

A

V

= -10V  

A

GS  

R

R

D

T

= 25°C  

D

A

,

)

,

)

N

N

0.05  

0

O

O

(

(

S

S

D

D

T

= -55°C  

R

A

R

0.01  

0

4

8

12  

16  

20  

0

4

8

12  

16  

20  

-I

D

, DRAIN-SOURCE CURRENT (A)  

-I

D

, DRAIN CURRENT (A)  

Figure 3

 

Typical On-Resistance vs.  

Drain Current and Gate Voltage  

Figure 4

 

Typical On-Resistance vs.  

Drain Current and Temperature  

2

0.16  

0.14  

0.12  

0.1  

)



(

1.8  

1.6  

1.4  

1.2  

E

C

N

V

I

= -10V  

GS  

= -5.3A  

D

A

T

S

I

S

E

R

V

= -4.5V  

= -4.2A  

GS  

–

I

D

N

V

= -4.5V  

O

GS  

= -4.2A  

I

E

C

R

U

O

S

D

1

0.08  

0.06  

0.04  

0.02  

0

0.8  

0.6  

0.4  

0.2  

V

= -10V  

GS  

= -5.3A  

–

N

I

D

I

A

R

D

,

)

N

O

(

S

D

R

0

-50 -25  

T

A

, AMBIENT TEMPERATURE (



C)  

Figure 5

 

On-Resistance Variation with

T

e

mperature  

0

25  

50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

J

, JUNCTION TEMPERATURE (

°C

)  

Figure 6

 

On-Resistance Variation with Temperature  

3 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

DMP3099LQ  

2.4  

1.6  

0.8  

0

20  

16  

12  

8

)

V

(

E

G

A

T

L

)

A

I

= -1mA  

D

(

O

T

N

E

R

R

U

C

E

C

R

U

O

S

,

I

S  

V

D

I

= -250µA  

D

L

O

T

= 25°C  

A

H

S

E

R

H

T

E

T

A

G

,

4

)

h

t

(

S

V

G  

0

0

-50 -25  

T

A

, AMBIENT TEMPERATURE (

°C

)  

Figure 7

 

Gate Threshold Variation vs. Ambient Temperature  

0

25  

50  

75 100

 

125 150  

0.3  

0.6  

0.9  

1.2  

1.5  

-V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Figure 8

 

Diode Forward Voltage vs. Current  

1000  

10  

9

8

7

6

5

4

3

2

1

0

V

I

= -15V  

)

DS  

= -3.8A  

V

C

(

iss  

D

E

G

A

T

L

O

V

D

L

O

100  

H

S

E

R

H

T

C

oss  

E

C

T

rss  

A

G

f = 1MHz  

S

V

G  

10  

0

5

10  

15  

20  

25  

30  

0

2

4

6

8

10  

12  

V

, DRAIN-SOURCE VOL

T

A

GE (V)  

Q

g

, TOTAL GATE CHARGE (nC)  

Figure 10

 

Gate Charge  

–

V

D

D

S

S

, DRAIN-SOURCE VOLTAGE (V)  

Figure 9

 

Typical Junction Capacitance  

Figure 9

 

Typical Junction Capacitance  

4 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

DMP3099LQ  

Package Outline Dimensions  

SOT23  

All 7°  

SOT23  

Min Max  

H

Dim  

A

B

C

D

F

G

H

Typ  

0.40  

1.30  

2.40  

GAUGE PLANE  

0.37  

1.20  

2.30  

0.89  

0.45  

1.78  

2.80  

0.51  

1.40  

2.50  

1.03 0.915  

0.60 0.535  

0.25  

J

K

K1  

a

M

A

2.05  

3.00  

1.83  

2.90  

0.05  

L

L1  

J

0.013 0.10  

K

K1  

L

L1  

M

a

0.890 1.00 0.975  

0.903 1.10 1.025  

C

B

0.45  

0.25  

0.61  

0.55  

0.55  

0.40  

0.085 0.150 0.110  

0° 8°

 

—  

D

G

F

All Dimensions in mm  

Suggested Pad Layout  

SOT23  

Y

Dimensions Value

 

(in mm)  

C

X

X1  

Y

2.0  

0.8  

1.35  

0.9  

Y1  

C

Y1  

2.9  

X

X1  

5 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

DMP3099LQ  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2017, Diodes Incorporated  

6 of 6  

October 2017  

© Diodes Incorporated  

DMP3099LQ  

Document number: DS40182

 

Rev. 1 – 2  

Mouser Electronics  

Authorized Distributor  

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