Diodes-Incorporated-DMN2046U-13
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DMN2046U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
T
A
= +25°C
V
(BR)DSS
R
DS(ON)
max
Low Input Capacitance
Fast Switching Speed
3.4A
2.7A
72
mΩ @ V
GS
= 4.5V
110
mΩ @ V
GS
= 2.5V
Low Input/Output Leakage
20V
ESD protected gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Mo
lding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
D
SOT23
D
G
S
G
ESD PROTECTED
Gate Protection
Top View
Pin Configuration
S
Diode
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2046U-7
DMN2046U-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” produ
cts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SOT23
46U = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
46U
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
DMN2046U
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Units
V
V
Gate-Source Voltage
±12
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
3.4
2.7
A
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Pulsed Drain Current (
Pulse width ≤10µS, Duty Cycle ≤1%
)
18
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
0.76
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
166
°C/W
W
R
θ
JA
1.26
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
100
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
@T
A
= +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
–
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
1.0
±10
μ
A
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
–
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
–
–
–
1.4
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 0V, I
S
= 0.94A
72
110
Static Drain-Source On-Resistance
–
–
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
–
–
–
–
–
–
–
–
–
–
–
–
–
292
36
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
32
Reverse Transfer Capacitance
Gate Resistance
63
V
DS
= 0V, V
GS
= 0V, f = 1MHz
3.8
0.5
0.8
6.7
25.1
69.1
34.1
18.2
3.6
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
V
GS
= 4.5V, V
DS
= 10V, I
D
5.1A
=
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(on)
t
r
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 2.4
Ω, R
G
= 6
Ω
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 4.1A, di/dt = 100A/
μ
s
I
F
= 4.1A, di/dt = 100A/
μ
s
t
rr
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
DMN2046U
20
18
16
14
12
10
8
10
8
V
= 3
.
5
V
GS
V
V
= 3
.
0
V
= 2
.
5
V
GS
V
= 5
.
0
V
DS
GS
V
= 4
.
0
V
GS
V
= 4
.
5
V
= 10V
GS
V
= 2
.
0
V
GS
V
6
4
GS
T
= 150°C
A
T
A
= 125°C
6
T
= 85°C
A
V
= 1
.
5
V
= 1
.
2
V
GS
4
2
0
T
= 25°C
A
2
T
= -55°C
A
V
GS
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
0.1
0.09
0.08
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.07
0.06
0.05
V
= 2
.
5
V
GS
I
= 3
.
9
A
D
0.04
0.03
V
= 4
.
5
V
GS
I
= 3
.
3
A
D
0.02
0.01
0
0.01
0
1
2
3
4
5
6
7
8 9 10
11 12 13 14 15
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
0
2
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristics
0.1
0.09
0.08
0.07
0.06
0.05
V
= 4
.
5
V
GS
1.6
1.2
V
I
= 2
.
5
V
GS
= 5A
T
A
= 150°C
D
T
= 125°C
V
I
= 4
.
5
V
A
GS
= 5A
T
T
= 85°C
D
A
A
0.04
0.03
0.02
= 25°C
T
= -55°C
A
0.8
0.4
0.01
0
0
2
4
6
8
10
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125 150
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
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February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
DMN2046U
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.2
1
V
I
= 2
.
5
V
GS
= 5A
D
0.8
0.6
0.4
I
= 1mA
D
V
I
= 4
.
5
V
I
= 250µA
GS
= 5A
D
D
0.2
0
–
5
0
–
2
5
0
25
50
75 100
125 150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
10
8
1000
f = 1MHz
T =
150°C
A
C
iss
T =
125°C
A
6
100
T =
85°C
A
4
C
o
s
s
T =
25°C
A
2
0
C
r
s
s
T =
-55°C
A
10
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
4.5
4
100
10
1
R
D
S
(
on)
Limi
t
e
d
3.5
V
I
= 10V
DS
3
2.5
2
= 5
.
1
A
D
DC
P
= 10s
P
W
= 1s
W
1.5
1
P
= 100ms
W
T
J
(max)
= 150°C
0.1
P
= 10ms
W
T
A
= 25°C
P
= 1ms
W
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
P
= 100µs
W
0.5
0
0.01
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, TO
T
AL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
4 of 6
February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
DMN2046U
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
R
t
h
ja
(t) = r(t) * R
t
h
ja
D = 0
.
0
05
R
t
h
ja
= 66°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13
Transient Thermal Resistance
Package Outline Dimensions
All 7°
SOT23
H
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
GAUGE PLANE
0.40
1.30
2.40
0.25
J
K
K1
a
2.05
3.00
1.83
2.90
0.05
M
A
L
L1
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
0.45
0.25
0.61
0.55
0.55
0.40
C
B
0.085 0.150 0.110
8°
All Dimensions in mm
D
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
2.9
0.8
0.9
2.0
1.35
X
Y
C
E
Z
C
E
X
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February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
DMN2046U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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February 2015
© Diodes Incorporated
DMN2046U
Document number: DS37649 Rev. 2 – 2
