Minos-MP18N20
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MP18N20
1 Description
MP18N20, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter
V
DS
I
D
Value
200
18
Unit
V
A
R
DS(ON).Typ
0.13
Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
MP18N20
MPF18N20
MDP18N20
MDT18N20
Package
TO-220
TO-220F
TO-251
TO-252
Product Code
18N20
Packing
Tube
Tube
Tube
Tape Reel
MP18N20
XXXX
：
Product Code
(2) Package
type
(1) Chip
name
XXXX
YYWW ZZ
SSSSS
YYW
W
：
Year&Week
ZZ
：
Assembly Code
SSSSS
：
Lot Code
(1)MP18N20:200V 18A
(2) TO-220F
TO-220
TO-251 TO-252
MP18N20
2
ABSOLUTE RATINGS
at T
C
= 25
°
C, unless otherwise specified
Symbol Parameter
Rating
Units
Drain-to-Source Voltage
V
DSS
200
18
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
= 100
°
C
11
A
Pulsed Drain Current(Note1)
I
DM
72
A
Gate-to-Source Voltage
V
GS
±
30
580
5.0
V
Single Pulse Avalanche Energy(Note2)
E
AS
mJ
V/ns
Peak Diode Recovery dv/dt(Note3)
dv/dt
Power Dissipation
TO-220, TO-251,TO-252
130
W
W/
℃
W
P
D
Derating Factor above 25
°
C
1.2
Power Dissipation
TO-220F
42
0.33
P
D
Derating Factor above 25
°
C
W/
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，
T
stg
150
，
–
55 to 150
300
T
L
℃
3
Thermal characteristics
Thermal characteristics (No FullPAK) TO-220TO-251TO-252
Symbol Parameter
RATINGS
Units
Junction-to-Case
R
θ
JC
0.84
62.5
℃
/W
℃
/W
Junction-to-Ambient
R
θ
JA
Thermal characteristics (FullPAK) TO-220F
Symbol Parameter
RATINGS
3.0
Units
℃
/W
℃
/W
Junction-to-Case
R
θ
JC
Junction-to-Ambient
R
θ
JA
62.5
MP18N20
4
Electrical Characteristics
at T
C
= 25
°
C, unless otherwise specified
OFF Characteristics
Values
Typ.
Test
Conditions
Symbol
V
DSS
Parameter
Units
V
Min.
Max.
Drain to Source Breakdown
Voltage
V
G
S
=0V,
I
D
=250
µ
A
200
—
—
Δ
BV
DSS
/
Δ
T
J
ID=250uA,
Reference25
℃
Bvdss Temperature
Coefficient
V/
℃
—
—
0.25
—
—
1
V
DS
=200V,
V
G
S
= 0V,
Tj = 25
℃
µ
A
µ
A
Drain to Source Leakage
Current
I
DSS
V
DS
=160V,
V
G
S
= 0V,
Tj = 125
℃
—
—
100
Gate to Source Forward
Leakage
Gate to Source Reverse
Leakage
V
G
S
=+30V
V
G
S
=-30V
nA
nA
I
GSS(F)
I
GSS(R)
—
—
—
—
100
-100
ON Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
Drain-to-Source On-
Resistance
VGS=10V,
ID=7.5A(Note4)
R
DS(ON)
V
GS(TH)
g
fs
— 0.13
0.18
Ω
V
S
VDS = VGS,
ID = 250
µ
A(Note4)
Gate Threshold Voltage
2.0
—
—
4.0
—
VDS=15V,
ID =9A(Note4)
Forward Transconductance
12
Dynamic Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
Gate resistance
f = 1.0MHz
R
g
—
2
—
Ω
Input Capacitance
Output Capacitance
C
iss
C
oss
— 1320 —
VGS = 0V
VDS = 25V
f = 1.0MHz
—
—
450
130
—
—
PF
Reverse Transfer
Capacitance
C
rss
MP18N20
Switching Characteristics
Values
Units
Symbol
Parameter
Test Conditions
Min.
—
Typ.
15
52
46
37
23
8
Max.
Turn-on Delay Time
Rise Time
t
d(ON)
T
r
t
d(OFF)
t
f
—
ID =18A
—
—
VDD = 100V
VGS = 10V
RG =2
0
Ω
ns
Turn-Off Delay Time
Fall Time
—
—
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain
(“Miller”)Charge
Q
g
—
—
ID =18A
VDD =160V
VGS = 10V
Q
gs
Q
gd
—
—
nC
—
6
—
Source-Drain Diode Characteristics
Values
Typ.
Test
Conditions
Symbol
Parameter
Units
Min.
—
Max.
18
Continuous Source Current (Body
Diode)
Maximum Pulsed Current (Body
Diode)
I
S
—
—
A
A
TC=25
°
C
I
SM
—
72
IS=18A,
VGS=0V(Note4)
IS=18A,
Tj = 25
°
C
Diode Forward Voltage
Reverse Recovery Time
V
SD
T
rr
—
—
—
1.2
—
V
350
ns
dIF/dt=100A/us,
VGS=0V
Reverse Recovery Charge
Q
rr
— 3600 —
nC
Note1: Pulse width limited by maximum junction temperature
Note2: L=2.7mH, VDs=50V, Start TJ=25
℃
Note3: ISD =18A
,di/dt
≤
100A/us,VDD
≤
BVDS,
ꢀ
Start
ꢁ
TJ=25
℃
Note4:
Pulse
ꢂ
width
ꢃ
tp
≤
300µs,
δ≤
2%
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
5.
Characteristics Curves
Figure 1a Safe Operating Area (No FullPAK)
Figure 1b Safe Operating Area (FullPAK)
Figure 2a Power Dissipation (No FullPAK)
Figure 2b Power Dissipation (FullPAK)
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
Figure 3a Max Thermal Impendance (No FullPAK)
Figure 3b Max Thermal Impendance (FullPAK)
Figure 4 Typical Output Characteristics
Figure 5 Typical Transfer Characteristics
MP18N20
Figure 6 Typical Drain to Source ON Resistance
vs Drain Current
Figure 7 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 8 Typical Theshold Voltage vs Junction
Temperature
Figure 9 Typical Breakdown Voltage vs Junction
Temperature
MP18N20
Figure 10 Capacitance Characteristics
Figure 11 Gate Charge Characteristics
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
6. Test Circuit and Waveform
Figure 12 Gate Charge Test Circuit
Figure 13 Gate Charge Waveforms
Figure 14 Resistive Switching Test Circuit
Figure 15 Resistive Switching Waveforms
MP18N20
Figure 16 Diode Reverse Recovery Test Circuit
Figure 17 Diode Reverse Recovery Waveform
Figure 18 Unclamped Inductive Switching Test Circuit
Figure 19 Unclamped Inductive Switching Waveform
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
7.
Package Description
C
A
D
G
C1
F
E
N
N
Values(mm)
Items
MIN
MAX
10.4
A
B
9.60
15.4
8.90
4.30
2.10
2.40
0.60
0.30
1.12
16.2
9.50
4.90
3.00
3.00
1.00
0.60
1.42
B1
C
C1
D
E
F
G
3.40
1.60
12.0
3.80
2.90
14.0
H
L
N
Q
2.34
3.15
2.90
2.74
3.55
3.30
TO-220F
Package
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
Values(mm)
Items
MIN
MAX
10.6
A
B
9.60
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
B1
C
C1
D
E
F
G
H
L
N
Q
TO-220
Package
MP18N20
V
a
lues(mm)
Items
MIN
ꢀ
6.30
ꢃ
5.70
ꢆ
1.00
ꢉ
6.80
ꢌ
2.10
ꢏ
0.30
ꢒ
0.50
ꢕ
0.30
ꢘ
0.70
ꢛ
1.60
ꢞ
3.9
ꢡ
MAX
ꢁ
6.90
ꢄ
6.30
ꢇ
1.20
ꢊ
7.40
ꢍ
2.50
ꢐ
0.60
ꢓ
0.70
ꢖ
0.60
ꢙ
1.00
ꢜ
2.40
ꢟ
4.3
ꢢ
A
ꢂ
B
ꢅ
B1
ꢈ
B2
ꢋ
C
ꢎ
D
ꢑ
E
ꢔ
F
ꢗ
G
ꢚ
H
ꢝ
L*
ꢠ
M
ꢣ
N
ꢦ
5.10
ꢤ
2.09
ꢧ
5.50
ꢥ
2.49
ꢨ
adjustable
*
：
TO-251 Package
SHE
N
ZHE
N MIN
OS TECH
N
OLOGY CO
.
,LT
D
MP18N20
V
a
lues(mm)
Items
MIN
6.30
0
MAX
6.90
0.13
6.30
2.50
0.60
0.90
1.00
0.60
1.20
10.50
3.10
1.00
5.50
2.49
A
A1
B
C
D
E1
E2
F
5.70
2.10
0.30
0.60
0.70
0.30
0.70
9.60
2.70
0.60
5.10
2.09
G
L1
L2
H
M
N
R
0
ꢩ
.3
T
Y
1.40
5.10
1.60
6.30
TO-252 Package
