Littelfuse-DSEI12-06A
| Part # | Littelfuse-DSEI12-06A |
Download  | Littelfuse-DSEI12-06A |
DSEI12-06A
=
V
RRM
I
FAV
t
rr
60
0
V
1
4
A
FRED
=
=
3
5
n
s
Fast Recovery Epitaxial Diode
Single Diode
Part number
DSEI12-06A
Backside: cathode
3
1
TO-220
Features / Advantages:
Applications:
Package:
●
Planar passivated chips
●
Low leakage current
●
Antiparallel diode for high frequency
switching devices
●
Industry standard outline
●
RoHS compliant
●
Very short recovery time
●
Antisaturation diode
●
Epoxy meets UL 94V-0
●
Improved thermal behaviour
●
Very low Irm-values
●
Snubber diode
●
Free wheeling diode
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
– Power dissipation within the diode
– Turn-on loss in the commutating switch
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009a
© 2020
IXYS all rights reserved
DSEI12-06A
Ratings
Fast Diode
Symbol
V
RSM
Definition
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
Conditions
min. typ. max. Unit
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
600
600
50
V
V
V
RRM
I
R
reverse current, drain current
V
R
= 600
V
V
R
= 480
V
I
F
= 12
A
I
F
= 24
A
I
F
= 12
A
I
F
= 24
A
T
C
= 115°C
rectangular
µA
mA
V
3
forward voltage drop
1.62
1.80
1.43
1.69
14
V
F
V
T
VJ
=
°C
V
150
V
average forward current
threshold voltage
T
VJ
= 150°C
T
VJ
= 150°C
A
I
FAV
d = 0.5
1.21
V
V
F0
r
F
for power loss calculation only
slope resistance
18.9 m
Ω
thermal resistance junction to case
thermal resistance case to heatsink
K/W
K/W
W
R
thJC
R
thCH
P
tot
I
FSM
C
J
1.6
0.50
T
C
= 25°C
T
VJ
= 45°C
T
VJ
= 25°C
62
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine;
V
R
= 0 V
V
R
= 40
0
V
f = 1
M
Hz
100
A
12
2.5
4
pF
A
max. reverse recovery current
I
RM
T
VJ
= 2
5
°
C
T
VJ
= 10
0
°
C
T
VJ
= 2
5
°
C
T
VJ
= 10
0
°
C
A
I
F
= 14
A; V
R
= 350
V
-di
F
/dt =
100 A/µs
reverse recovery time
90
ns
ns
t
rr
150
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009a
© 2020
IXYS all rights reserved
DSEI12-06A
Ratings
Package
TO-220
Symbol
I
RMS
Definition
Conditions
min. typ. max.
Unit
per terminal
25
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
T
VJ
virtual junction temperature
T
op
operation temperature
storage temperature
T
stg
2
Weight
0.4
20
0.6 Nm
60
M
D
mounting torque
F
N
mounting force with clip
C
Product Marking
Part Number
Logo
XXXXXX
yywwZ
Date Code
Lot #
123456
Location
Ordering
Standard
Ordering Number
DSEI12-06A
Marking on Product
DSEI12-06A
Delivery Mode
Quantity Code
No.
50 434396
Tube
T
VJ
=
1
50°C
Equivalent Circuits for Simulation
* on die level
Fast
V
0
I
R
0
Diode
1.21
15.8
threshold voltage
slope resistance *
V
V
0 max
R
0 max
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009a
© 2020
IXYS all rights reserved
DSEI12-06A
Outlines TO-220
A
Dim.
Millimeter
Min.
Inches
= supplier option
Max. Min.
Max.
A1
E
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170 0.190
0.045 0.055
0.090
0.110
ØP
4
b
b2
0.64
1.15
1.01
1.65
0.025 0.040
0.045 0.065
C
D
0.35 0.56
14.73 16.00
0.014 0.022
0.580 0.630
1
3
E
e
H1
9.91 10.66
0.390 0.420
0.200 BSC
0.230 0.270
2x b2
2x b
5.08
5.85
BSC
6.85
L
L1
12.70 13.97
5.84
0.500 0.550
0.110 0.230
2.79
C
ØP
Q
3.54
2.54
4.08
3.18
0.139 0.161
0.100 0.125
e
A2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009a
© 2020
IXYS all rights reserved
DSEI12-06A
Fast Diode
30
1.5
1.0
25
20
15
10
5
T
VJ
= 100°C
V
R
50 V
T
VJ
= 100°C
max
=
V
R
= 350 V
25
max
I
F
= 14 A
28 A
20
I
F
= 14 A
28 A
Q
r
I
RM
[A]
I
F
14 A
15
10
5
7 A
T
VJ
= 150°C
100°C
14 A
[µC]
0.5
[A]
7 A
25°C
typ.
typ.
0
0.0
0
0.0
0.5
1.0
V
F
[V]
Fig. 1 Forward current I
F
versus
max. forward voltage drop V
F
1.5
2.0
2.5
1
10
100
1000
0
100
200
300
400
-di
F
/dt [A/µs]
-di
F
/dt [A/µs]
Fig. 2
Typ. reverse recov. charge
Q
r
versus -di
F
/dt
Fig. 3
Typ. peak reverse current
I
RM
versus -di
F
/dt
1000
800
1.4
1.2
1.0
0.8
0.6
0.4
0.5
20
T
VJ
= 100°C
max
V
R
= 350 V
0.4
16
12
8
I
F
= 14 A
600
0.3
V
FR
[V]
t
rr
28 A
14 A
T
VJ
= 125°C
I
F
14 A
K
f
t
fr
=
[µs]
7 A
400
0.2
0.1
0.0
[ns]
I
RM
200
4
t
fr
Q
r
V
FR
typ.
0
400
0
0
40
80
120
160
0
100
200
300
400
0
100
200
300
T
VJ
[°C]
-di
F
/dt [A/µs]
di
F
/dt [A/µs]
Fig. 4
Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5
Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6
Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
2.0
1.6
Constants for Z
thJC
calculation:
Z
thJC
1.2
i
R
thi
(K/W)
t
i
(s)
1
2
3
4
5
0.100
0.020
0.400
0.400
0.680
0.001
0.010
0.180
0.024
0.003
[k/W]
0.8
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 7
Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009a
© 2020
IXYS all rights reserved
