Diodes-Incorporated-DMN4036LK3-13
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A Product Line of
Diodes Incorporated
DMN4036LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
Low on-resistance
I
D
V
(BR)DSS
R
DS(on)
Fast switching speed
T
A
= 25
°
C
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
12.2A
9.4A
36m
Ω
@ V
GS
= 10V
61m
Ω
@ V
GS
= 4.5V
40V
Mechanical Data
•
•
Case: TO252-3L
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
(Note 1)
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
Backlighting
DC-DC Converters
Power management functions
•
Weight: 0.33 grams (approximate)
D
D
D
TO252-3L
G
S
G
S
Equivalent Circuit
TOP VIEW
PIN OUT -TOP VIEW
Ordering Information
(Note 1)
Product
DMN4036LK3-13
Marking
N4036L
Reel size (inches)
Tape width (mm)
Quantity per reel
13
16
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website.
For packaging details, go to our website.
Marking Information
= Manufacturer’s Marking
N4036L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
YYWW
N4036L
WW = Week (01 – 53)
1 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
Value
40
Unit
V
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
(Note 2)
(Note 4)
V
V
GS
±
20
12.2
9.7
A
V
GS
= 10V
V
GS
= 10V
T
A
= 70
°
C (Note 4)
(Note 3)
(Note 5)
I
D
8.5
31.7
10.4
31.7
A
A
A
I
DM
I
S
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I
SM
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
4.12
33
(Note 3)
(Note 4)
(Note 6)
W
Power dissipation
8.49
67.9
2.12
16.9
30.3
14.7
59.0
P
D
Linear derating factor
mW/
°
C
(Note 3)
(Note 4)
(Note 6)
(Note 7)
Thermal Resistance, Junction to Ambient
R
θ
JA
°
C/W
°
C
Thermal Resistance, Junction to Lead
Operating and storage temperature range
3.1
R
θ
JL
-55 to 150
T
J
, T
STG
Notes:
2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t
≤
10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs.
The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Thermal Characteristics
R
DS(on)
R
DS(on)
Limited
10
Limited
10
1
DC
DC
1
1s
100ms
1s
100ms
10ms
10ms
T
amb
=25°C
T
amb
=25°C
100m
100m
1ms
1ms
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
100µs
10
100µs
10
1
1
V
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Safe Operating Area
S
D
a
S
fe Operating Area
35
30
25
20
15
10
5
T
amb
=25°C
60
50
40
30
20
10
0
T
amb
=25°C
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.1
D=0.05
Single Pulse
10 100
D=0.1
D=0.05
D=0.2
D=0.2
Single Pulse
0
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Single Pulse
T
amb
=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
50mm x 50mm
2oz FR4
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
1
25mm x 25mm
1oz FR4
100µ 1m
10m 100m
1
10
100
1k
0
20 40 60 80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
3 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
40
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
0.5
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V
μ
A
nA
I
GSS
±
100
V
GS
=
±
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
3.0
0.036
0.061
⎯
V
V
GS(th)
⎯
I
D
= 250
μ
A, V
DS
= V
GS
0.026
0.049
19.6
0.96
112
V
V
GS
= 10V, I
D
= 12A
GS
= 4.5V, I
D
= 6A
Static Drain-Source On-Resistance (Note 8)
Ω
R
DS (ON)
⎯
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
S
V
g
fs
V
SD
t
rr
⎯
⎯
V
DS
= 15V, I
D
= 12A
I
S
= 12A, V
GS
= 0V
1.1
ns
nC
⎯
⎯
I
S
= 12A, di/dt = 100A/
μ
s
926
Q
rr
⎯
453
79.1
40.5
4.9
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 20V, V
GS
= 0V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
V
GS
= 4.5V
9.2
Q
g
V
DS
= 20V
1.7
I
D
= 12A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= 10V
2.7
3.2
11.7
11.6
9.5
ns
V
DD
= 20V, V
GS
= 10V
ns
I
D
= 12A, R
G
≅
6.0
Ω
t
D(off)
t
f
ns
Notes:
8. Measured
under pulsed conditions. Pulse width
≤
300
μ
s; duty cycle
≤
2%
9. For
design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
4 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Typical Characteristics
10V
T = 25°C
10
T = 150°C
10V
4.5V
4V
4V
10
1
3.5V
3V
3.5V
1
2.5V
3V
0.1
0.1
0.01
2V
V
G
S
V
G
S
0.01
0.1
1
0.1
V
1
V
Drain-Source Voltage
1
(
V
0
)
Drain-Source Voltage
1
(
V
0
)
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
1
V
G
S
= 10V
I
D
= 12A
V
DS
= 10V
R
DS(on)
T = 150°C
0.1
T = 25°C
V
G
S(th)
0.01
1E-3
V
G
S
= V
DS
I
D
= 250uA
3
4
5
-50
0
50
150
Tj Junction
Temperatu
1
r
e
0
0
(°C)
1
V
GS
Ga
2
te-Source Voltage (V)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
10
3V
3.5V
V
G
S
T = 25°C
4V
T = 150°C
1
1
0.1
4.5V
T = 25°C
0.1
10V
Vgs = 0V
0.8
0.01
0.01
0.2
0.4
0.6
1.0
0.01
0.1
I
D
Drain
C
1
urrent (A)
10
V
SD
Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
5 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Typical Characteristics – continued
10
8
600
500
V
G
S
= 0V
f = 1MHz
C
ISS
400
6
C
O
SS
300
C
R
SS
4
200
100
0
V
DS
= 20V
2
I
D
= 12A
0
0.1
1
10
0
2
4
6
8
10
V
DS
– Drain – Source Voltage (V)
Q – Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
Q
G
50k
Same as
D.U.T
12V
Q
GS
Q
GD
V
G
V
DS
I
G
D.U.T
I
D
V
GS
Charge
Basic gate charge waveform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
r
t
(on)
t
(on)
Switching time waveforms
Switching time test circuit
6 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Package Outline Dimensions
DIM
Inches
Millimeters
Min
DIM
Inches
Millimeters
Min Max
Min
0.086
–
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
–
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
–
Min
Max
A
A1
b
2.18
–
e
H
0.090 BSC
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L
b2
b3
c
L1
L2
L3
L4
L5
θ
1°
θ
°
–
0.108 REF
0.020 BSC
0.035
2.74 REF
0.508 BSC
0.89
0.065
0.040
0.060
10°
1.65
1.016
1.52
10°
c2
D
0.025
0.045
0°
0.635
1.14
0°
D1
E
0.265
–
6.73
–
0°
15°
0°
15°
E1
–
–
–
–
7 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
A Product Line of
Diodes Incorporated
DMN4036LK3
Suggested Pad Layout
6.2
3.0
0.244
0.118
5.8
0.228
1.6
6.17
0.063 0.243
mm
inches
2.58
0.101
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are
intended to implant into the body, or
2. support
or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
8 of 8
March 2010
© Diodes Incorporated
DMN4036LK3
Document number: DS32122 Rev. 2 – 2
