Diodes-Incorporated-DZT5551

DZT5551  

160V NPN HIGH VOLTAGE TRANSISTOR IN SOT223  

Features  

Mechanical Data  



















BV

CEO

> 160V  











Package: SOT223  

BV

EBO

> 6V  

Package material: molded p

lastic. “Green” molding

compound.  

UL Flammability Rating 94V-0  

I

C

= 600mA Continuous Collector Current  

Low Saturation Voltage (150mV max @10mA)  

h

FE

specified up to 50mA for a high gain hold up  

Complementary PNP Type: DZT5401  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin Plated Leads, Solderable per  

MIL-STD-202, Method 208  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

For automotive applications requiring specific change  

control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP  

capable, and manufactured in IATF 16949 certified facilities),  

please

or your local Diodes representative.  



Weight: 0.112 grams (approximate)  

Applications  





High-voltage amplification applications  

High-voltage switching applications  

SOT223  

Device Schematic  

Top View  

Pin-Out Top View  

Ordering Information

(Note 4)  

Packing  

Quantity  

Orderable  

Package  

Marking  

Reel Size (Inches)  

13  

Tape Width (mm)  

Part Number  

Carrier  

Reel  

DZT5551-13  

SOT223  

K4N  

12  

2,500  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

Marking Information  

(

T

op View)  

K4N = Product type marking code  

= Manufacturer’s code marking  

YWW = Date code marking  

YWW  

Y = Last digit of year ex: 7 = 2007  

WW = Week code 01 – 52  

1 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Collector-Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

180  

160  

6

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Continuous Collector Current  

Peak Collector Current  

600  

1

mA  

A

I

CM  

Thermal Characteristics  

Characteristic  

Power Dissipation (Note 5)  

Symbol  

Value  

2

Unit  

W

P

D  

Thermal Resistance, Junction to Ambient (Note 5)  

62.5  

°C/W  

R

  

JA  

Thermal Resistance, Junction to Leads (Note 6)  

Thermal Resistance, Junction to Case (Note 7)  

Operating and Storage Temperature Range  

45  

27  

°C/W  

°C/W  

°C  

R

  

JL  

R

  

JC  

-55 to +150  

T

J

, T

STG  

Notes:  

5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition  

6. Thermal resistance from junction to solder-point (at the end of the collector lead).  

7. Thermal resistance from junction to the top of the case.  

2 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

Thermal Characteristics and Derating Information  

2.00  

1.75  

1.50  

1.25  

1.00  

0.75  

0.50  

0.25  

0.00  

1

V

CE(sat)  

Limited  

50mmx50mmx1.6mm  

1oz Copper  

100m  

10m  

1m  

DC  

1s  

100ms  

Single Pulse  

T

amb

=25°C  

10ms  

1ms  

100µs  

50mmx50mmx1.6mm  

1oz Copper  

1

10  

100  

0

20  

40  

60  

80 100

 

120 140 160  

Temperature (°C)  

V

CE

Collector-Emitter Voltage (V)  

Safe Operating Area  

Derating Curve  

Figure 1. Safe Operating Area  

Figure 2. Derating Curve  

70  

60  

50  

40  

30  

20  

10  

0

100  

10  

1

Single Pulse  

T

=25°C  

amb  

T

=25°C  

amb  

50mmx50mmx1.6mm  

1oz Copper  

50mmx50mmx1.6mm  

1oz Copper  

D=0.5  

D=0.2  

Single Pulse  

D=0.05  

D=0.1  

100µ 1m

 

10m 100m  

1

10  

100  

1k  

100µ 1m

 

10m 100m  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Width (s)  

Pulse Power Dissipation  

Figure 4. Pulse Power Dissipation  

Transient Thermal Impedance  

Figure 3. Transient Thermal Impedance  

3 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note 8)  

Emitter-Base Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

I

C

= 100µA  

180  

160  

6.0  

270  

200  

7.85  

—

—

—

V

V

V

BV

CBO  

BV

CEO  

BV

EBO  

I

C

= 1mA  

I

E

= 100µA  

V

CB

= 120V  

V

CB

= 120V, T

A

= +100°C  

V

EB

= 4V  

—

—



 

—

1

—

  

1

50  

50  

nA  

µA  

Collector Cutoff Current  

Emitter Cutoff Current  

I

CBO  

I

EBO  

50  

nA  

ON CHARACTERISTICS (Note 8)  

—

—

  

65  

115  

150  

200  

mV  

mV  

I

C

= 10mA, I

B

= 1mA  

I

C

= 50mA, I

B

= 5mA  

I

C

= 10mA, I

B

= 1mA  

I

C

= 50mA, I

B

= 5mA  

I

C

= 1mA, V

CE

= 5V  

I

C

= 10mA, V

CE

= 5V  

I

C

= 50mA, V

CE

= 5V  

Collector-Emitter Saturation Voltage  

V

CE(sat)  

V

BE(sat)  

—

  

—

  

760  

840  

1000  

1200  

mV  

mV  

Base-Emitter Saturation Voltage  

DC Current Gain  

80  

80  

30  

130  

145  

65  

—

250  

—

—

h

FE  

SMALL SIGNAL CHARACTERISTICS  

V

CE

= 10V, I

C

= 10mA,  

f = 100MHz  

Transition Frequency  

100  

130  

300  

MHz  

f

T  

V

CE

= 10V, I

C

= 10mA,  

f = 1kHz  

Small Signal Current Gain  

Output Capacitance  

Noise Figure  

50  

—

—

—

—

—

260  

6

—

pF  

dB  

h

fe  

C

obo  

NF  

V

CB

= 10V, f = 1MHz  

V

CE

= 5.0V, I

C

= 200µA,  

R

S

= 1.0k

Ω

, f = 1.0kHz  

8

Delay Time  

Rise Time  

—

—

—

—

95  

64  

—

—

—

—

ns  

ns  

ns  

ns  

t

(d)  

t

(r)  

t

(s)  

t

(f)  

V

CC

= 10V, I

C

= 10mA,  

I

B1

= -I

B2

= 1mA  

Storage Time  

Delay Time  

1256  

140  

Notes:  

8. Pulse Test: Pulse width



300µs. Duty cycle



2.0%.  

4 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

1

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

Tamb=25°C  

I

C

/I

B

=10  

150°C  

100°C  

25°C  

I

C

/I

B

=50  

I

C

/I

B

=20  

I

C

/I

B

=10  

100m  

100m  

-55°C  

1m  

10m  

100m  

10m  

100m  

I

C

Collector Current (A)  

I

Collector Current (A)  

v I  

V

v I  

Figure 5.

 

V

CE(sat)

v I

C  

Figure 6.

 

V

CE(sat)

v I

C  

CE(SAT)  

C

CE(SAT)  

C

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

I

C

/I

B

=10  

150°C  

Ta=25°C  

V

CE

=5V  

200  

150  

100  

50  

-55°C  

25°C  

100°C  

25°C  

100°C  

-55°C  

150°C  

0

100µ  

1m  

10m  

100m  

1m  

10m  

100m  

I

C

Collector Current (A)  

I

C

Collector Current (A)  

h v

 

I  

V

v I  

Figure 8.

 

V

BE(sat)

v I

C  

Figure 7.

 

h

FE

v I

C  

FE  

C

BE(SAT) C  

V

CE

=5V  

1.0  

0.8  

0.6  

0.4  

-55°C  

25°C  

100°C  

150°C  

1m  

10m  

100m  

I

C

Collector Current (A)  

V

v I  

Figure 9.

 

V

BE(on)

v I

c  

BE(ON)  

C

5 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

Package Outline Dimensions  

SOT223  

D

Q

b1  

C

SOT223  

Dim Min Max Typ  

1.55 1.65 1.60  

A1

0.010 0.15

 

0.05  

A

E

E1  

b

b1  

C

D

E

E1  

e

e1  

L

0.60 0.80 0.70  

2.90 3.10 3.00  

0.20 0.30 0.25  

6.45 6.55 6.50  

3.45 3.55 3.50  

6.90 7.10 7.00  

Gauge  

Plane  

0.25  

Seating  

Plane  

L

e1  

–

–

–

–

4.60  

2.30  

b

e

0.85 1.05 0.95  

0.84 0.94 0.89  

Q

A

A1  

7°  

All Dimensions in mm  

Suggested Pad Layout  

SOT223  

X1  

Y1  

C1 Y2  

Y

Dimensions Value

 

(in mm)  

C

C1  

X

2.30  

6.40  

1.20  

3.30  

1.60  

1.60  

8.00  

X1  

Y

Y1  

Y2  

C

X

6 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2  

DZT5551  

IMPORTANT NOTICE  

DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH  

1.  

REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF  

MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY  

RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

2.  

The Information contained herein is for informational purpose only and is provided only to illustrate the operation

of Diodes’ products  

described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any  

product described herein. This document is intended for skilled and technically trained engin

eering customers and users who design with Diodes’  

products. Diodes’ products may be used to facilitate safety

-related applications; however, in all instances customers and users are responsible for  

(a) selecting the appropriate Diodes products for their a

pplications, (b) evaluating the suitability of Diodes’ products for their intended applications,  

(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements

as well as safety and  

functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control  

techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their  

applications.  

3.  

Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes  

from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such  

use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al

l damages and  

liabilities.  

4.  

Products described herein may be covered by one or more United States, international or foreign patents and pending patent  

applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks  

and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties  

(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu

ment.  

5.  

Diodes’  

products  

are  

provided  

subject  

to  

Diodes’  

Standard  

Terms  

and  

Conditions  

of  

Sale  

or other applicable terms. This document does not  

alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any  

products purchased through unauthorized sales channel.  

6.  

Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa

le is  

prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contraven

tion of any applicable laws or  

regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or  

penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless  

against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with  

the applicable laws and regulations, as well as any unintended or unauthorized application.  

7.  

While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain  

technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and  

Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make  

modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described  

herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document  

is the final and determinative format released by Diodes.  

8.  

Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is  

prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such  

unauthorized use.  

9. This Notice may be periodically updated with the most recent version available at

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.  

All other trademarks are the property of their respective owners.  

© 2023 Diodes Incorporated. All Rights Reserved.  

7 of 7  

June 2023  

DZT5551  

© 2023 Copyright Diodes Incorporated. All Rights Reserved.  

Document number: DS31219 Rev. 4 – 2