STANSON-Tech–STP4441

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

SCRIPTION  

STP4441 is the P-Channel logic enhancement mode power field effect transistor which  

is produced using high cell density, DMOS trench technology. This high density  

process is especially tailored to minimize on-state resistance. These devices are  

particularly suited for low voltage application, noteook power management ane ther  

battery powered circuits where high-side witching.  

FEATURE  

PIN CONFIGURATION  

SOP-8  

l

l

l

l

l

-60V/-10.0A, R

DS(ON)

= 55m

Ω

(Typ.)  

@V

GS

=-10V  

-60V/-5.0A, R

DS(ON)

= 73m

Ω  

@V

GS

= -4.5V  

Super high density cell design for  

extremely low R

DS(ON)  

Exceptional on-resistance and maximum  

DC current capability  

SOP-8 package design  

PART MARKING  

SOP-8  

：

Y

A

B

Year Code  

Date Code  

Wafer Code  

：

：

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1  

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

℃

ABSOULTE MAXIMUM RATINGS

(Ta = 25

 

Unless otherwise noted )  

Typical  

-60  

Parameter  

Symbol  

V

DSS  

V

GSS  

I

D  

Unit  

Drain-Source Voltage  

V

V

±

20  

Gate-Source Voltage  

T

A

=25

℃  

Continuous Drain Current  

-10.0  

-4.0  

A

℃

(TJ=150 )  

℃

T

A

=70  

Pulsed Drain Current  

I

DM  

-40  

-3  

A

Continuous Source Current  

(Diode Conduction)  

I

S  

A

T

A

=25

℃  

2.3  

1.3  

Power Dissipation  

P

D  

W

℃

℃

℃

T

A

=70  

Operation Junction Temperature  

Storgae Temperature Range  

T

J  

-55/150  

-55/150  

70  

T

STG  

℃

θ

/W  

R

Thermal Resistance-Junction to Ambient  

JA  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1  

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

℃

ELECTRICAL CHARACTERISTICS

( Ta = 25

 

Unless otherwise noted )  

Parameter  

Symbol  

Condition  

Min Typ Max

 

Unit  

Static  

Drain-Source Breakdown  

Voltage  

V

(BR)DSS  

V

GS(th)  

I

GSS  

V

GS

=0V,I

D

=-250uA  

-60  

V

V

Gate Threshold Voltage  

Gate Leakage Current  

V

DS

=V

GS

,I

D

=-250 uA

 

-0.8  

-2.5  

±

±

V

DS

=0V,V

GS

= 20V  

100  

-1  

nA  

V

DS

=-48V,V

GS

=0V  

V

DS

=-48V,V

GS

=0V  

Zero Gate Voltage Drain  

Current  

I

DSS  

uA  

-10  

℃

T

J

=85  

V

GS

=-10V, I

D

=-10A  

V

GS

=-4.5V, I

D

=-5A  

0.053 0.060  

0.071 0.081  

Ω

Drain-source On-Resistance  

Forward Tran Conductance  

Diode Forward Voltage  

Dynamic  

R

DS(on)  

V

DS

=-5V,I

D

=-5.9A  

I

S

=-2.3A,V

GS

=0V  

18  

S

V

g

fs  

V

SD  

-0.7 -1.0  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

47  

55  

V

DS

=-30V,V

GS

=-10  

Gate-Source Charge  

5.8  

9.3  

≡

I

D

-5.0A  

nC  

pF  

Gate-Drain Charge  

Input Capacitance  

Ciss  

Coss  

Crss  

2410  

179  

V

DS

=-30V,V

GS

=0V  

f=1MHz  

Output Capacitance  

Reverse TransferCapacitance  

125  

9

t

d(on)  

Turn-On Time  

Turn-Off Time  

tr  

Ω

6.2  

25  

V

DS

=-30V,R

L

=4.7  

nS  

Ω

V

GS

=-10V,R

GEN

=3  

t

d(off)  

tf  

13.2  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1  

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

TYPICAL CHARACTERICTICS  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1  

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

TYPICAL CHARACTERICTICS  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1  

STP4441  

P Channel Enhancement Mode MOSFET  

-10A  

SOP-8 PACKAGE OUTLINE  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

.

STP4441 2010.

 

V1