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April 2015
FDC8878
N-Channel PowerTrench
®
MOSFET
30 V, 8.0 A, 16 m
Ω
Features
General Description
Max r
DS(on)
= 16 m
Ω
at V
GS
= 10 V, I
D
= 8.0 A
Max r
DS(on)
= 18 m
Ω
at V
GS
= 4.5 V, I
D
= 7.5 A
High performance trench technology for extremely low r
DS(on)
Fast switching speed
This N-Channel MOSFET is produced
using Fairchild
Semiconductor‘s advanced
Power Trench
®
process that has
been optimized for r
DS(on)
, switching performance.
RoHS Compliant
Applications
Primary Switch
S
S
D
D
G
D
D
D
D
4
5
6
3
2
1
G
D
Pin 1
D
SuperSOT
TM
-6
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 3)
Drain Current
-Continuous (Package limited)
T
C
= 25 °C
8.0
I
D
-Continuous
-Pulsed
T
A
= 25 °C
(Note 1a)
8.0
A
32
Power Dissipation
Power Dissipation
Operating and Storage Junction
T
e
mperature Range
(Note 1a)
(Note 1b)
1.6
P
D
W
0.8
T
J
, T
STG
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
30
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
8 mm
Quantity
.888
FDC8878
SSOT-6
3000 units
©2012 Fairchild Semiconductor Corporation
FDC8878 Rev.1.4
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
13
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μ
A
Gate to Source Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
D
= 250
μ
A, referenced to 25 °C
GS
= 10 V,
I
D
= 8.0 A
1.2
1.6
-5
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
mV/°C
V
12
14
16
43
16
18
21
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V,
I
D
= 7.5 A
m
Ω
V
GS
= 10 V,
I
D
= 8.0 A, T
J
= 125 °C
V
DD
= 5 V,
I
D
= 8.0 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
782
318
40
1040
425
60
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
6
2
12
10
30
10
18
9
ns
ns
V
DD
= 15 V, I
D
= 8 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
17
2
ns
ns
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
13
6
nC
nC
nC
nC
Q
g(TOT)
V
DD
= 15 V
D
= 8 A
I
Q
gs
Q
gd
1.7
2.0
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 8.0 A
I
F
= 8.0 A, di/dt = 100 A/
μ
s
(Note 2)
0.8
22
7
1.2
35
14
V
ns
nC
Q
rr
Reverse Recovery Charge
NOTES:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JA
R
is guaranteed by design while R
is determined by the user’s board design.
θ
JC
θ
CA
b.175 °C/W when mounted on
a minimum pad of
2 oz
copper
a. 78 °C/W when mounted on
a 1 in
pad of
2 oz
copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only.
No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDC8878 Rev.1.4
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
32
2.5
2.0
1.5
1.0
0.5
V
GS
= 10 V
PULSE DURATION = 80
μ
s
V
GS
= 3 V
DUTY CYCLE = 0.5% MAX
V
GS
= 6 V
V
GS
= 4.5 V
24
V
GS
= 3.5 V
V
GS
= 3.5 V
V
GS
= 3 V
16
V
GS
= 4.5 V
8
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0
8
16
24
32
0
0.3
0.6
0.9
1.2
1.5
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
50
I
D
= 8 A
GS
= 10 V
PULSE DURATION = 80
μ
s
V
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
I
D
= 8 A
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
32
100
V
GS
= 0 V
T
J
= 150
o
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
C
V
DS
= 5 V
24
16
8
10
1
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0
0.1
1
2
3
4
0
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDC8878 Rev.1.4
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
2000
1000
I
D
= 8 A
8
C
iss
V
DD
= 10 V
6
V
DD
= 15 V
C
oss
100
4
V
DD
= 20 V
2
f = 1 MHz
= 0 V
C
rss
V
GS
0
10
0.1
0
3
6
9
12
15
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
10
8
20
10
T
J
= 25
o
C
V
GS
= 10 V
6
V
GS
= 4.5 V
T
J
= 100
o
C
4
2
θ
JA
= 78
o
C/W
T
J
= 125
o
C
R
0
25
1
0.001
0.01
0.1
1
10
100
50
75
100
125
150
T
A
, AMBIENT
TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
Maximum Continous Drain Current
vs. Ambient
Temperature
100
10
1000
SINGLE PULSE
θ
JA
= 175
o
C/W
A
= 25
o
C
100
R
100 us
T
1
10
1
1 ms
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
SINGLE PULSE
100 ms
0.1
T
J
= MAX RATED
θ
JA
= 175
o
C/W
A
= 25
o
C
1 s
10 s
DC
R
T
0.01
0.1
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
1
10
0.01
0.1
1
10
100
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figure 12.
Single Pulse
Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDC8878 Rev.1.4
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
SINGLE PULSE
R
θ
JA
= 175
o
C/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
0.001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDC8878 Rev.1.4
5
SYMM
C
L
0.95
0.95
C
3.00
2.80
A
1.00 MIN
6
4
B
3.00
2.60
2.60
1.70
1.50
C
1
3
0.50
0.30
0.95
0.70 MIN
M
0.20
A B
1.90
LAND PATTERN RECOMMENDATION
SEE DETAIL A
(0.30)
1.10 MAX
H
1.00
0.70
C
0.10
0.20
0.08
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS
PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
C
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE
LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS
OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
GAGE PLANE
0.25
8°
0°
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING
FILE NAME: MKT-MA06AREVF
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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