LGE-B772-B772
| Part # | LGE-B772-B772 |
Download  | LGE-B772-B772 |
B772
SOT-89 Transistor(PNP)
1.
BASE
SOT-
89
2.
COLLETOR
1
4.6
B
2
4.4
1.6
1.4
1.8
1.4
3.
EMITTER
3
2.6
2.4
4.25
3.75
Features
0.8
MIN
0.53
Low speed switching
0.40
0.48
2x)
0.35
1.5
0.44
0.37
0.13
B
3.0
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-3
A
P
C
0.5
W
℃
℃
T
j
150
-55-150
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-40
-30
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-100
μ
A ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100
μ
A,I
C
=0
V
CB
= -40
V
,
I
E
=0
V
CE
=-30
V
,
I
B
=0
V
EB
=-6
V
,
I
C
=0
V
V
-1
-10
-1
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
DC current gain
h
FE
V
CE
= -2
V
,
I
C
= -1A
I
C
=-2A, I
B
= -0.2A
60
400
-0.5
Collector-emitter saturation voltage
V
CE(sat)
V
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-2A, I
B
= -0.2A
-1.5
V
CE
= -5
V
,
I
C
=-0.1A
Transition frequency
f
T
80
MHz
f =10MHz
CLASSIFIC
A
T
ION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
Revision:201
70701
-P1
mail:lge@lgesemi.com
