onsemi-KSC1845FTA

Part #onsemi-KSC1845FTA
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onsemi-KSC1845FTA
NPN Epitaxial Silicon  
Transistor  
KSC1845  
Features  
•
Audio Frequency Low
−
Noise Amplifier  
•
Complement to KSA992  
•
This is a Pb
−
Free Device  
MAXIMUM RATINGS
(Values are at T
 
= 25
°
C unless otherwise noted.)  
A
Symbol  
Parameter  
Collector
−
Base Voltage  
Collector
−
Emitter Voltage  
Emitter
−
Base Voltage  
Collector Current  
Value  
Unit  
V
V
CBO  
120  
1. Emitter  
2. Collector  
3. Base  
V
CEO  
V
EBO  
120  
V
1
5
50  
V
2
3
I
C
mA  
mA  
°
C  
°
C  
TO
−
92 3 4.83×4.76  
LEADFORMED  
CASE 135AR  
I
B
Base Current  
10  
T
J
Junction
T
e
mperature  
Storage
T
e
mperature  
150  
T
STG  
−
55 to 150  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AC1  
845X  
YWW  
THERMAL CHARACTERISTICS
(Values are at T
 
= 25
°
C unless otherwise  
A
Symbol  
Parameter  
Power Dissipation  
Value  
500  
4
Unit  
mW  
P
D
Derate Above 25
°
C  
mW/
°
C  
°
C/W  
R
Thermal Resistance,  
Junction
−
to
−
Ambient  
250  
q
JA  
A
= Assembly Code  
1. PCB
 
size: FR
−
4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
C1845 = Device Code  
= P / F / E / U  
with minimum land pattern size.  
X
YWW =
 
Date Code  
ORDERING INFORMATION  
Device  
KSC1845FTA  
Package  
Shipping  
2000 / Fan
−
Fold  
TO
−
92 3L  
(Pb
−
Free)  
©
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2021
−
Rev. 2  
KSC1845/D  
 

KSC1845  
ELECTRICAL CHARACTERISTICS
(Values are at T
 
= 25
°
C unless otherwise noted.)  
A
Symbol  
Parameter  
Conditions  
= 100
m
A, I
 
= 0  
Min  
120  
120  
5
Typ  
−
Max  
−
Unit  
V
BV  
BV  
BV  
Collector
−
Base Breakdown Voltage  
Collector
−
Emitter Breakdown Voltage  
Emitter
−
Base Breakdown Voltage  
Collector Cut
−
Off Current  
I
I
CBO  
CEO  
EBO  
C
A
= 1 mA, I
 
= 0  
−
−
V
C
B
I =
 
100
m
A, I
 
= 0  
−
−
V
E
C
I
V
= 120
V
, I
 
= 0  
−
−
50  
50  
−
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
CE  
E
I
Emitter Cut
−
Off Current  
V
V
V
V
= 5
V
, I
 
= 0  
−
−
EBO  
C
h
DC Current Gain  
= 6
V
, I
 
= 0.1 mA  
150  
200  
0.55  
−
580  
600  
0.59  
0.07  
100  
1.6  
7
FE1  
FE2  
C
h
= 6
V
, I
 
= 1 mA  
1200  
0.65  
0.30  
−
C
V
BE  
(on)  
Base
−
Emitter On Voltage  
Collector
−
Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
= 6
V
, I
 
= 1 mA  
V
V
C
V
CE  
(sat)  
I =
 
10 mA, I
 
= 1 mA  
C B  
f
T
V
V
V
= 6
V
, I
 
= 1 mA  
50  
−
MHz  
pF  
CE  
CB  
CE  
C
C
= 30 V, I
 
= 0, f = 1 MHz  
2.5  
−
ob  
E
NF  
Noise Figure  
=
−
5
V
, I
 
=
−
1.0 mA,  
−
dB  
C
R =
 
100 k
W
, f = 1 kHz  
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
h

FE

CLASSIFICATION  
Classification  
P
F
E
U
200~400  
300~600  
400~800  
600~1200  
h
FE2  
2

KSC1845  
TYPICAL PERFORMANCE CHARACTERISTICS  
10  
8
1.0  
I
= 16
m
A  
I
B
= 1.4
m
A  
I
B
= 1.2
m
A  
B
I
I
= 14
m
A  
= 12
m
A  
B
I
I
I
= 1.0
m
A  
= 0.8
m
A  
= 0.6
m
A  
B
B
B
0.8  
0.6  
0.4  
0.2  
0
B
I
B
I
B
I
B
= 10
m
A  
= 8
m
A  
= 6
m
A  
6
I
= 0.4
m
A  
= 0.2
m
A  
B
B
4
I
= 4
m
A  
= 2
m
A  
B
B
I
2
I
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
100  
100  
V
, COLLECTOR
−
EMITTER VOLTAGE (V)  
V
, COLLECTOR
−
EMITTER VOLTAGE (V)  
CE  
CE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
100  
10  
V
CE  
= 6 V  
I =
 
10 I  
C B  
Pulse
T
e
st  
Pulse
T
e
st  
V
V
(sat)  
(sat)  
BE  
1
CE  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
I ,
 
COLLECTOR CURRENT (mA)  
C
I ,
 
COLLECTOR CURRENT (mA)  
C
Figure 3. DC Current Gain  
Figure 4. Base
−
Emitter Saturation Voltage and  
Collector
−
Emitter Saturation Voltage  
10  
10k  
f = 1 MHz  
= 0  
V
CE  
= 6 V  
I
E
1k  
1
100  
10  
0.1  
1
10  
, COLLECTOR
−
BASE VOLTAGE (V)  
100  
0
1
10  
V
I ,
 
EMITTER CURRENT (mA)  
E
CB  
Figure 5. Collector Output Capacitance  
Figure 6. Current Gain Bandwidth Product  
3

KSC1845  
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)  
100  
10  
800  
V
= 6 V  
CE  
Pulse
T
e
st  
700  
600  
500  
400  
300  
200  
100  
0
1
0.1  
0.01  
0.4  
0.5  
V
0.6  
0.7  
0.8  
0.9  
0
25  
50  
75  
100  
125  
150  
175  
, BASE
−
EMITTER VOLTAGE (V)  
T , AMBIENT TEMPERATURE (
°
C)  
a
BE  
Figure 7. Collector Current vs. Base
−
Emitter Voltage  
Figure 8. Power Derating  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO
−
92 3 4.83×4.76 LEADFORMED  
CASE 135AR  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13879G  
TO
−
92 3 4.83X4.76 LEADFORMED  
PAGE 1 OF 1  
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