MATSUKI-ME7170

ME7170-G  

N-Channel 30V(D-S) Enhancement MOSFET  

GENERAL DESCRIPTION  

FE

A

T

URES  

●

R

DS(ON)

≦

2.6

mΩ@V

GS

=10V  

The ME7170-G is the N-Channel logic enhancement mode power  

field effect transistors are produced using high cell density , DMOS  

trench technology. This high density process is especially tailored to  

minimize on-state resistance. These devices are particularly suited  

for low voltage application such as notebook computer power  

management and other battery powered circuits where Low-side  

switching , and low in-line power loss are needed in a very small  

outline surface mount package.  

●

R

DS(ON)

≦

3.9

mΩ@V

GS

=4.5V  

●

Super high density cell design for extremely low R

DS(ON)  

●

Exceptional on-resistance and maximum DC current  

capability  

APPLICATIONS  

●

Power Management in Note book  

●

NB/MB Vcore Low side switching  

●

Portable Equipment  

●

Battery Powered System  

●

DC/DC Converter  

PIN CONFIGUR

A

T

ION  

●

Load Switch  

PowerDFN 5×6  

e

Ordering Information

: ME7170-G (Green product-Halogen free)  

Absolute Maximum Ratings

(T

A

=25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

V

DS  

Unit  

V

Maximum Ratings  

Drain-Source Voltage  

30  

±20  

Gate-Source Voltage  

V

GS  

V

T

A

=25

℃

 

T

A

=70

℃  

110  

Continuous Drain Current

*  

Pulsed Drain Current  

ID  

I

DM  

P

D  

A

A

90  

450  

T

A

=25

℃  

T

A

=70

℃  

56  

Maximum Power Dissipation

*  

W

36  

℃

Junction and Storage

T

e

mperature Range  

TJ,

T

s

tg  

-55 to 150  

2.2  

℃

/W  

Thermal Resistance-Junction to Case

*  

R

θJ

C  

*The device mounted on 1in

2

FR4 board with 2 oz copper  

DCC  

正式發行  

Nov, 2017-Ver2.6  

01  

ME7170-G  

N-Channel 30V(D-S) Enhancement MOSFET  

Electrical Characteristics

(T

J

=25

℃

Unless Otherwise Specified)  

Symbol  

STATIC  

V

(BR)DSS  

V

GS(th)  

I

GSS  

Parameter  

Limit  

Min  

Typ  

Max Unit  

V

GS

=0

V

,

I

D

=250

μ

A  

V

DS

=V

GS

, I

D

=250

μ

A  

V

DS

=0

V

,

V

GS

=±20V  

V

DS

=30

V

,

V

GS

=0V  

V

GS

=10

V

,

I

D

=25A  

V

GS

=4.5

V

,

I

D

=19A  

I

S

=25A, V

GS

=0V  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

30  

1

V

2.2  

±100  

1

V

Gate Leakage Current  

nA  

μ

A  

I

DSS  

Zero Gate Voltage Drain Current  

2.4  

3.3  

0.8  

2.6  

3.9  

1.2  

Drain-Source On-State Resistance

a  

Diode Forward Voltage  

m

Ω  

R

DS(ON)  

V

SD  

V

DYNAMIC  

Qg  

T

o

tal Gate Charge  

V

DS

=15

V

,

V

GS

=10V, I

D

=20A  

V

DS

=15

V

,

V

GS

=4.5

V

,

I

D

=20A  

86  

39  

nC  

nC  

Qg  

T

o

tal Gate Charge  

Qgs  

Qgd  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

19  

12  

5406  

487  

418  

27  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

V

DS

=15

V

,

V

GS

=0

V

,

F=1MHz  

pF  

ns  

V

DS

=15

V

,

R

L

=15

Ω  

V

GS

=10

V

,

R

G

=6

Ω  

I

D

=1A  

51  

152  

54  

t

d(off)  

t

f  

Note: a.Pulse test: pulse width

≦

300us, duty cycle

≦

2

％  

b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.  

DCC  

正式發行  

Nov, 2017-Ver2.6  

02  

ME7170-G  

N-Channel 30V(D-S) Enhancement MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Nov, 2017-Ver2.6  

03  

ME7170-G  

N-Channel 30V(D-S) Enhancement MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Nov, 2017-Ver2.6  

04  

ME7170-G  

N-Channel 30V(D-S) Enhancement MOSFET  

PowerDFN 5×6 Package Outline  

DCC  

正式發行  

Nov, 2017-Ver2.6  

05