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June 2015
FDBL0150N60
®
N-Channel PowerTrench
MOSFET
60 V, 240 A, 1.5 m
Ω
Features
Typical R
= 1.1 m
Ω
at V
= 10V, I
= 80 A
GS D
DS(on)
Typical Q
= 130 nC at V
= 10V, I
= 80 A
g(tot)
GS
D
D
UIS Capability
RoHS Compliant
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
G
S
For current package drawing, please refer to the Fairchild web
‐
UPS and Energy Inverters
Energy Storage
Load Switch
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
Ratings
60
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
GS
±20
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
T
C
= 25°C
240
I
D
A
See Figure 4
614
E
AS
P
D
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
Power Dissipation
Derate Above 25
o
C
357
2.38
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
0.42
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
43
Notes:
1: Current
is limited by silicon.
2: Starting
T =
25°C, L = 0.3mH, I
= 64A, V
= 60V during inductor charging and V
= 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
pad of 2oz copper.
R
is guaranteed by design, while R
is determined by the board design.
The maximum rating
θ
JC
θ
JA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDBL0150N60
FDBL0150N60
MO-299A
13″
24mm
2000 units
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
60
–
–
–
–
–
–
1
V
V
DS
= 6 0 V ,
T
J
= 25
o
C
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C (Note 4)
–
1
I
GSS
V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
R
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
2.9
1.1
2.1
4.0
1.5
2.9
V
T
J
= 25
o
C
–
–
m
Ω
m
Ω
I
D
= 80A,
GS
= 10V
T
J
= 175
o
C (Note 4)
V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
10300
2590
270
4.3
–
pF
pF
pF
Ω
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
R
g
Output Capacitance
–
Reverse Transfer Capacitance
Gate Resistance
–
f = 1MHz
–
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
V
GS
= 0 to 10V
V
130
19
169
nC
nC
nC
nC
DD
= 48V
D
= 80A
V
GS
= 0 to 2V
–
–
–
I
48
Q
gd
20
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay
Rise Time
–
–
–
–
–
–
–
160
ns
ns
ns
ns
ns
ns
30
77
78
57
–
–
–
V
V
DD
= 30V, I
D
= 80A,
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay
Fall Time
–
–
t
off
Turn-Off Time
200
Drain-Source Diode Characteristics
I
SD
=80A, V
GS
= 0V
–
–
–
–
–
–
1.25
1.2
V
V
SD
Source-to-Drain Diode Voltage
I
SD
= 40A, V
GS
= 0V
V
t
rr
Reverse-Recovery Time
94
131
140
200
ns
nC
I
F
= 80A, dI
SD
/dt = 100A/
μ
s,
V
DD
=48V
Q
rr
Reverse-Recovery Charge
Note:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
2
Typical Characteristics
400
350
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10V
CURRENT LIMITED
BY SILICON
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T
C
, CASE TEMPERATURE(
o
C)
T
C
, CASE TEMPERATURE(
o
C)
Figure 2.
Maximum Continuous Drain Current vs.
Case Temperature
Figure 1.
Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
T
C
= 25
o
C
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
10
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
3
Typical Characteristics
2000
1000
1000
100
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
≠
0
t
AV
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
AS
DSS DD
100
10
1
100us
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
STARTING T
J
= 25
o
C
1ms
STARTING T
J
= 150
o
C
SINGLE PULSE
10ms
100ms
T
J
= MAX RATED
o
T
C
= 25
C
0.1
0.1
0.001 0.01
0.1
1
10
100 1000
10000
1
10
100 200
t
AV
, TIME IN AVALANCHE (ms)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
350
350
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
300
V
DD
= 5V
250
200
T
J
= 175
o
C
T
J
= 25
o
C
10
1
T
J
= 25
o
C
150
100
T
J
= 175
o
C
T
J
= -55
o
C
50
0
0.1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
350
350
V
GS
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
15V Top
10V
8V
7V
6V
300
250
200
150
100
50
300
250
5.5V
5V Bottom
200
150
80
μ
s PULSE WIDTH
Tj=25
o
C
100
50
0
80
μ
s PULSE WIDTH
Tj=175
o
C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
4
Typical Characteristics
50
2.4
2.0
1.6
1.2
0.8
0.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
=
80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
T
J
= 25
o
C
T
J
= 175
o
C
I
D
= 80A
V
GS
= 10V
2
4
6
8
10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11.
R
DSON
vs. Gate Voltage
Figure 12.
Normalized R
DSON
vs. Junction
Temperature
1.5
1.10
V
GS
=
V
DS
I
D
= 5mA
I
D
= 250
μ
A
1.2
0.9
0.6
0.3
0.0
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
10
I
D
= 80A
V
DD
= 30V
C
iss
8
10000
V
DD
=24V
V
DD
= 36V
6
4
2
0
1000
100
10
C
oss
C
rss
f = 1MHz
GS
= 0V
V
0.1
1
10
100
0
30
60
90
120
150
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 15.
Capacitance vs. Drain to Source
Voltage
Figure 16.
Gate Charge
vs. Gate to Source
Voltage
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
5
Dimensional Outline and Pad Layout
©2015 Fairchild Semiconductor Corporation
FDBL0150N60 Rev. 1.0
6
9.70
9.90
DETAIL “A”
B
0.60
0.80
0.40
0.60
(0.40)
10°
0.60
0.80
(2X)
11.58
11.78
(3.30)
10.28
10.48
0.50
0.70
0.20
C A B
DETAIL “A”
1
8
0.60
0.70
0.90
(8X)
0.25
1.20
7X
C
C
A B
(0.35)
0.20
8.40
10.20
TOP VIEW
5.10
4.45
DETAIL “B”
6.64
6.64
2.95
2.90
0.20
0.10
C
0.40
0.60
8.10
4.99
2.20
2.40
C
2.04
13.28
1.46
C
0.86
0.60
SIDE VIEW
2.80
1
8
1.20
0.80
9.80
10.00
A
0.20
C
A B
(8.00)
LAND PATTERN
RECOMMENDATION
1.90
2.10
5.19
5.89
4.73
(2X)
0.10
2.60
(2X)
(2X)
6.55
6.75
(7.15)
3.30
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE
STANDARD REFERENCE:
1.20
0.65
JEDEC MO-299, ISSUE A, DATED NOVEMBER
2009.
3X
2X
3.75
7.40
7.60
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-1994.
(8.30)
BOTTOM VIEW
10°
E) DRAWING
FILE NAME: MKT-PSOF08AREV3
(0.35)
DETAIL “B”
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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