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January 2016
FDBL0110N60
®
N-Channel PowerTrench
MOSFET
60 V, 300 A, 1.1 m
Ω
Features
Typical R
= 0.85 m
Ω
at V
= 10V, I
= 80 A
GS D
DS(on)
Typical Q
= 170 nC at V
= 10V, I
= 80 A
g(tot)
GS
D
D
UIS Capability
RoHS Compliant
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
G
S
For current package drawing, please refer to the Fairchild
age-specifications/packageDetails.ht-
UPS and Energy Inverters
Energy Storage
ml?id=PN_PSOFA-008
Load Switch
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
Ratings
60
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
GS
±20
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
T
C
= 25°C
300
I
D
A
See Figure 4
1167
E
AS
P
D
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
Power Dissipation
Derate Above 25
o
C
429
2.86
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
0.35
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
43
Notes:
1: Current
is limited by bondwire configuration.
2: Starting
T =
25°C, L = 0.57mH, I
= 64A, V
= 40V during inductor charging and V
= 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
pad of 2oz copper.
R
is guaranteed by design, while R
is determined by the board design.
The maximum rating
θ
JC
θ
JA
2
Package Marking and Ordering Information
Device Marking
Device
Package
FDBL0110N60
FDBL0110N60
MO-299A
–
–
–
©2014 Fairchild Semiconductor Corporation
FDBL0110N60 Rev.1.2
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
60
–
–
–
–
–
–
1
V
V
DS
= 60V
T
J
= 25
o
C
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C (Note 4)
–
1
I
GSS
V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
R
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
3.0
0.85
1.5
4.0
1.1
2.2
V
T
J
= 25
o
C
–
–
m
Ω
m
Ω
I
D
= 80A,
GS
= 10V
T
J
= 175
o
C (Note 4)
V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
13650
3375
255
2.3
–
pF
pF
pF
Ω
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
R
g
Output Capacitance
–
Reverse Transfer Capacitance
Gate Resistance
–
–
f = 1MHz
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
V
GS
= 0 to 10V
V
170
24
220
32
–
nC
nC
nC
nC
DD
= 48V
D
= 80A
V
GS
= 0 to 2V
I
56
Q
gd
24
–
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay
Rise Time
–
–
–
–
–
–
–
137
ns
ns
ns
ns
ns
ns
45
61
80
41
–
–
–
V
V
DD
= 30V, I
D
= 80A,
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay
Fall Time
–
–
t
off
Turn-Off Time
156
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
300
A
A
See
Figure 4
I
SM
I
SD
=80A, V
GS
= 0V
–
–
–
–
–
1.25
1.2
V
V
SD
Source-to-Drain Diode Voltage
I
SD
= 40A, V
GS
= 0V
–
V
t
rr
Reverse-Recovery Time
107
183
139
265
ns
nC
I
F
= 80A, dI
SD
/dt = 100A/
μ
s,
V
DD
=48V
Q
rr
Reverse-Recovery Charge
Note:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
FDBL0110N60 Rev.1.2
2
Typical Characteristics
500
400
300
200
100
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
CURRENT LIMITED
BY SILICON
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T
C
, CASE TEMPERATURE(
o
C)
T
C
, CASE TEMPERATURE(
o
C)
Figure 2.
Maximum Continuous Drain Current vs.
Case Temperature
Figure 1.
Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
0.01
t
0.1
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
1000
100
10
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
FDBL0110N60 Rev.1.2
3
Typical Characteristics
2000
1000
2000
1000
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
≠
0
t
AV
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AS
100
100
10
1
100us
1ms
OPERATION IN THIS
AREA MAY BE
STARTING T
J
= 25
o
C
10
LIMITED BY r
DS(on)
1
STARTING T
J
= 150
o
C
SINGLE PULSE
10ms
100ms
T
J
= MAX RATED
o
T
C
= 25
C
0.1
0.001 0.01
0.1
1
10
100 1000
10000
0.1
1
10
100 200
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
300
400
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
240
180
120
60
V
DD
= 5V
T
J
= 175
o
C
T
J
= 25
o
C
10
1
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= -55
o
C
0
0.1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
400
400
V
GS
15V Top
10V
8V
7V
6V
V
GS
15V Top
10V
8V
7V
6V
300
200
100
0
300
5V
5.5V
5V Bottom
5V
5.5V
5V Bottom
200
100
0
80
μ
s PULSE WIDTH
Tj=25
o
C
80
μ
s PULSE WIDTH
Tj=175
o
C
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
FDBL0110N60 Rev.1.2
4
9.70
9.90
DETAIL “A”
B
0.60
0.80
0.40
0.60
(0.40)
10°
0.60
0.80
(2X)
11.58
11.78
(3.30)
10.28
10.48
0.50
0.70
0.20
C A B
DETAIL “A”
1
8
0.60
0.70
0.90
(8X)
0.25
1.20
7X
C
C
A B
(0.35)
0.20
8.40
10.20
TOP VIEW
5.10
4.45
DETAIL “B”
6.64
6.64
2.95
2.90
0.20
0.10
C
0.40
0.60
8.10
4.99
2.20
2.40
C
2.04
13.28
1.46
C
0.86
0.60
SIDE VIEW
2.80
1
8
1.20
0.80
9.80
10.00
A
0.20
C
A B
(8.00)
LAND PATTERN
RECOMMENDATION
1.90
2.10
5.19
5.89
4.73
(2X)
0.10
2.60
(2X)
(2X)
6.55
6.75
(7.15)
3.30
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE
STANDARD REFERENCE:
1.20
0.65
JEDEC MO-299, ISSUE A, DATED NOVEMBER
2009.
3X
2X
3.75
7.40
7.60
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-1994.
(8.30)
BOTTOM VIEW
10°
E) DRAWING
FILE NAME: MKT-PSOF08AREV3
(0.35)
DETAIL “B”
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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