Vishay-Intertech-SUM110P08-11L-E3
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SUM110P08-11L
Vishay Siliconix
P-Channel 80 V (D-S) MOSFET
FEATURES
•
TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
I
D
(A)
b
– 110
– 109
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ)
•
Material categorization:
For definitions of compliance please see
0.0112 at V
GS
= – 10 V
0.0145 at V
GS
= – 4.5 V
– 80
85 nC
TO-263
S
G
Drain Connected to
T
a
b
G
D
S
T
o
p View
Ordering Information:
SUM110P08-
1
1
L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 80
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
– 110
a
– 71
T
C
= 25 °C
C
= 125 °C
T
Continuous Drain Current (T
J
= 175 °C)
I
D
– 23.5
b, c
T
A
= 25 °C
– 13.6
b, c
T
A
= 125 °C
A
I
DM
I
S
Pulsed Drain Current
– 120
T
C
= 25 °C
T
A
= 25 °C
– 110
Continuous Source-Drain Diode Current
– 9
b, c
– 75
281
375
125
I
AS
Avalanche Current
L = 0.1 mH
T
C
= 25 °C
E
AS
Single-Pulse Avalanche Energy
mJ
W
T
C
= 125 °C
A
= 25 °C
P
D
Maximum Power Dissipation
13.6
b, c
T
4.5
b, c
T
A
= 125 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
R
thJA
t
10 s
8
11
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Steady State
0.33
0.4
Notes:
a. Package limited.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 40 °C/W.
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
1
New Product
SUM110P08-11L
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 1 µA
Drain-Source Breakdown Voltage
– 80
V
V
DS
T
e
mperature Coefficient
– 85
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
– 5.5
V
DS
= V
GS
, I
D
= – 250 µA
– 1
– 3
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 80
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 80
V
,
V
GS
= 0
V
,
T
J
= 175 °C
– 500
V
DS
10
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 20 A
GS
= – 4.5
V
,
I
D
= – 15 A
V
DS
= – 15
V
,
I
D
= – 20 A
– 120
0.0093
0.0120
85
0.0112
0.0145
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
S
V
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
10850
800
700
180
85
V
DS
= – 40
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 40
V
,
V
GS
= – 10
V
,
I
D
= – 110 A
270
130
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= – 40
V
,
V
GS
= – 4.5
V
,
I
D
= – 110 A
f = 1 MHz
35
Gate-Drain Charge
42
Gate Resistance
3.6
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
20
30
Rise Time
330
135
550
500
205
825
V
DD
= – 40
V
,
R
L
= 0.36
ns
I
D
– 110 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 20 A
– 110
– 120
– 1.5
100
A
– 0.8
65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
135
43
205
I
F
= – 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
22
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
New Product
SUM110P08-11L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
160
120
80
40
30
20
10
0
V
GS
= 10 V thru 6 V
5 V
25 °C
4 V
40
T
C
= 125 °C
– 55 °C
0
0
1
2
0
1
2
3
4
V
DS
– (V)
V
GS
– (V)
Output Characteristics
Transfer Characteristics
0.025
0.020
0.015
0.010
0.005
0.000
15000
12000
9000
6000
3000
0
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
0
20
40
60
– (A)
80
100
120
0
20
40
60
80
I
D
V
DS
– (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.3
2.0
1.7
1.4
1.1
0.8
0.5
V
= 10 V
= 20 A
GS
I
D
V
DS
= 40 V
6
V
DS
= 64 V
4
2
0
0
40
80
120
– (nC)
160
200
240
– 50
– 25
0
25
50
T –
(°C)
J
75 100
125 150 175
Q
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
3
New Product
SUM110P08-11L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.06
0.05
0.04
0.03
0.02
0.01
0
100
10
1
I
D
= 20 A
T
J
= 150 °C
25 °C
150 °C
25 °C
0
2
4
6
8
10
0
0.3
0.6
– (V)
0.9
1.2
V
GS
– (V)
V
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
0.8
6000
5000
4000
3000
2000
1000
0
0.6
0.4
I
D
= 1mA
0.2
0.0
– 0.2
– 0.4
– 50
– 25
0
25
50
75 100
125 150 175
0.0001
0.001
0.01
0.10
1
T
J
– (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Case (T
C
= 25 °C)
1000.0
400
Limited by r
DS(on)
*
350
300
250
200
150
100
50
10 µ
s
100.0
10.0
1.0
100 µ
s
1 ms
10 ms
100 ms, DC
Single Pulse
= 25 °C
T
c
0
0.1
0.1
100.0
1.0
10.0
25
50
75
100
T
C
125
150
175
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which r
is specified
DS(on)
GS
GS
Power Derating, Junction-to-Case
Safe Operating Area
4
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
New Product
SUM110P08-11L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000.0
120
100.0
Package Limited
90
10.0
60
1.0
30
0
0.1
0
25
50
75
T
100
– (°C)
125
150
175
0.00001 0.0001
0.001
0.01
– (s)
in
0.1
1.0
t
C
Max. Avalanche and Drain Current vs. Case Temperature
Avalanche Current vs. Time
1.00
0.5
0.2
0.1
0.10
0.05
0.02
Single
0.01
0.0001
1
0.01
0.1
0.001
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Pa
ckag
e Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
5
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
