LGE-MMBT3906
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MMBT3906
PNP General Purpose Transistor
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
A
SOT-23
Min
z
Epitaxial planar die construction.
Dim
A
Max
3.10
1.50
2.70
E
z
Complementary NPN type available
(MMBT3904).
B
1.10
K
B
C
D
E
1.0 Typical
0.4 Typical
0.35
0.48
2.00
0.1
J
z
z
Collector Current Capability I
CM
=-200mA.
Low Voltage(Max:-40V).
D
G
H
J
1.80
0.02
G
0.1 Typical
H
K
2.20
2.60
C
All Dimensions in mm
APPLICATIONS
z
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
2A
Package Code
SOT-23
MMBT3906
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
open emitter
open base
Value
-40
UNIT
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
-40
V
open collector
-6
V
-100
-200
-100
250
mA
mA
mA
mW
I
CM
I
BM
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb
≤
25°C
-65 to +150
°C
150
°C
T
amb
-65 to +150
°C
Note Transistor
mounted on an FR4 printed-circuit board.
mail:lge@lgesemi.com
Revision:201
70701
-P1
MMBT3906
PNP General Purpose Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=2
5℃ unless otherwise specified
SYMBOL PARAMETER
I
CBO
collector cut-off current
I
EBO
CONDITIONS
MIN. MAX. UNIT
I
E
= 0; V
CB
= -30 V
I
C
= 0; V
EB
= 6 V
V
CE
= -1V;
–
–
-50
-50
nA
nA
emitter cut-off current
I
C
= -0.1mA
60
80
100
60
30
–
–
I
C
= -1mA
–
h
FE
DC current gain
I
C
= -10mA
300
I
C
= -50mA
–
–
I
C
= -100mA
collector-emitter saturation
voltage
I
C
= -10mA; I
B
= 1mA
I
C
= -50mA; I
B
= -5mA
I
C
= -10mA; I
B
= -1mA
I
C
= -50mA; I
B
= -5mA
I
E
= I
e
= 0; V
CB
= -5 V;
f = 1 MHz
-200 mV
-300 mV
-850 mV
-950 mV
V
CEsat
V
BEsat
C
c
–
base-emitter saturation
voltage
–
–
collector capacitance
emitter capacitance
transition frequency
noise figure
–
4.5
10
–
pF
I
C
= I
c
= 0; V
EB
= -500 mV;
f = 1 MHz
C
e
–
250
–
pF
I
C
= -10mA; V
CE
= -20 V;
f = 100MHz
f
T
MHz
dB
I
C
= -100
μ
A; V
CE
= -5V;
R
S
= 1 k
Ω
;f = 10Hz to15.7 kHz
NF
4
Switching times (between 10% and 90% levels);
t
on
t
d
Turn-on time
delay time
–
–
–
–
–
–
65
35
ns
ns
ns
ns
ns
ns
t
r
rise time
I
Con
= -10mA; I
Bon
= -1mA;
I
Boff
= -1mA
35
t
off
t
s
turn-off time
300
225
75
storage time
t
r
fall time
Note
Pulse test: tp
≤
300 ms; d
≤
0.02.
mail:lge@lgesemi.com
Revision:201
70701
-P1
