Infineon-Technologies-IGP50N60T
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IGP50N60T
TRENCHSTOP
™
Series
Low Loss IGBT : IGBT in TRENCHSTOP
™
and Fieldstop technology
C
E
Features:
Very low
V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5
s
Designed for :
G
– Frequency Converters
– Uninterrupted Power Supply
TRENCHSTOP
™
and Fieldstop technology for 600V applications
offers :
PG-TO220-3
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
– low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
1.5 V
Marking
Package
IGP50N60T
600 V
50 A
G50T60
PG-TO220-3
175
C
Maximum Ratings
Parameter
Symbol
V
C
E
Value
Unit
600
V
Collector-emitter voltage,
T
j
≥
25
C
DC collector current, limited by
T
jmax
T
C
= 25
C, value limited by bondwire
T
C
= 100
C
90
64
I
C
A
Pulsed collector current,
t
p
limited by
T
jmax
I
C
pul s
–
150
150
20
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175
C,
t
p
= 1µs
Gate-emitter voltage
Short circuit withstand time
2)
V
G E
V
t
S
C
5
s
W
V
GE
= 15V,
V
CC
400V,
T
j
150
C
Power dissipation
T
C
= 25
C
P
t
ot
T
j
333
Operating junction temperature
-40…+175
-55…+150
260
Storage temperature
T
s
tg
–
C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction
–
case
R
t
hJC
0.45
62
K/W
Thermal resistance,
junction
–
ambient
R
t
hJA
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
BR)CES
V
G
E
=
0V,
I
C
=
0.2mA
600
–
–
V
Collector-emitter saturation voltage
V
C
E(sat)
V
G E
=
1
5V,
I
C
=
50A
T
j
=25
C
–
–
1.5
1.9
2.0
–
T
j
=175
C
Gate-emitter threshold voltage
V
G
E(th)
I
C
ES
I
C
=
0.8mA,
V
C
E
=
V
G E
4.1
4.9
5.7
Zero gate voltage collector current
V
C
E
=
600V
,
V
G
E
=
0V
µA
T
j
=25
C
–
–
–
–
–
–
40
3500
100
–
T
j
=175
C
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
C
E
=
0V,
V
G E
=20V
V
C
E
=
20V,
I
C
=
50A
–
nA
S
31
–
Integrated gate resistor
R
G
int
Ω
Dynamic Characteristic
Input capacitance
C
i
ss
V
C
E
=
25V,
–
–
–
–
3140
200
93
–
–
–
–
pF
V
G
E
=
0V,
Output capacitance
Reverse transfer capacitance
Gate charge
C
o
ss
C
r
ss
f
=
1MHz
Q
G
ate
V
C
C
=
480V,
I
C
=50A
V
G
E
=
15V
310
nC
nH
A
Internal emitter inductance
L
E
PG-TO-220-3-1
PG-TO-247-3-21
–
–
–
7
–
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
13
I
C
(SC)
458.3
V
G
E
=
15V,
t
S
C
5
s
V
C
C
=
4
00V,
T
j
1
50
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=
25
C
,
t
d
(on)
t
r
t
d
(off)
t
f
–
–
–
–
–
–
–
26
29
–
–
–
–
–
–
–
ns
V
C
C
=
400V,
I
C
=
50A,
V
G
E
=
0/15V,
r
G
=
7
,
L
=
103nH,
C
=
39pF
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-off delay time
Fall time
299
29
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t s
1.2
1.4
2.6
mJ
Diode from IKW50N60T
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=
175
C
,
t
d
(on)
t
r
t
d
(off)
t
f
–
–
–
–
–
–
–
27
33
–
–
–
–
–
–
–
ns
V
C
C
=
400V,
I
C
=
50A,
V
G
E
=
0/15V,
r
G
=
7
,
L
=
103nH,
C
=
39pF
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-off delay time
Fall time
341
55
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t s
1.8
1.8
3.6
mJ
Diode from IKW50N60T
3
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
t
p
=2µs
10µs
140A
120A
100A
80A
60A
40A
20A
0A
100A
T
C
=80°C
10A
50µs
T
C
=110°C
I
c
1ms
I
c
DC
1A
10ms
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1.
Collector current as a function of
switching frequency
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
175
C;
V
GE
=0/15V)
(
T
j
175
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 7
)
90A
80A
70A
60A
50A
40A
30A
20A
300W
250W
200W
150W
100W
50W
__
I
cmax
10A
— max.
current limited by bondwire
0A
25°C
0W
50°C
75°C 100°C
125°C 150°C
25°C
50°C
75°C 100°C
125°C 150°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3.
Power dissipation as a function
of case temperature
Figure 4.
Collector current as a function of
case temperature
(
T
j
175
C)
(
V
GE
15V,
T
j
175
C)
4
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
120A
100A
80A
60A
40A
20A
0A
120A
V
G
E
=20V
V
G
E
=20V
100A
15V
15V
13V
80A
13V
11V
9V
11V
60A
40A
20A
0A
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
4V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5.
Typical output characteristic
Figure 6.
Typical output characteristic
(
T
j
= 25°C)
(
T
j
= 175°C)
2.5V
I
C
=100A
80A
60A
40A
2.0V
1.5V
1.0V
0.5V
0.0V
I
C
=50A
I
C
=25A
T
J
=175°C
20A
25°C
0A
0V
2V
4V
6V
8V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 7.
Typical transfer characteristic
Figure 8.
Typical collector-emitter
(V
CE
=20V)
saturation voltage as a function
of junction temperature
(
V
GE
= 15V)
5
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
t
d(off)
t
d(off)
100ns
t
r
t
f
100ns
t
f
t
d(on)
t
r
t
d(on)
10ns
10ns
0A
20A
40A
60A
80A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9.
Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
= 7
Ω,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
7V
t
d(off)
6V
max.
typ.
5V
100ns
4V
3V
2V
1V
0V
min.
t
f
t
r
t
d(on)
10ns
25°C 50°C 75°C
100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
V
GE
= 0/15V,
I
C
= 50A,
r
G
=7
Ω,
(
I
C
= 0.8mA)
Dynamic test circuit in Figure E)
6
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
*)
E
on
and
E
ts
include losses
due to diode recovery
*)
E
on
and
E
ts
include losses
due to diode recovery
E
ts
*
6.0mJ
5.0mJ
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
8.0mJ
6.0mJ
4.0mJ
2.0mJ
0.0mJ
E
ts
*
E
on
*
E
off
E
off
E
on
*
0A
20A
40A
60A
80A
R
G
,
GATE RESISTOR
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
= 7Ω,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
*)
E
on
and
E
ts
include losses
*)
E
on
and
E
ts
include losses
due to diode recovery
due to diode recovery
4mJ
E
ts
*
3.0mJ
2.0mJ
1.0mJ
0.0mJ
E
on
*
3mJ
2mJ
1mJ
0mJ
E
ts
*
E
off
E
off
E
on
*
300V 350V 400V 450V 500V 550V
25°C 50°C 75°C
100°C 125°C 150°C
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
r
G
= 7Ω,
Dynamic test circuit in Figure E)
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
r
G
= 7Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
C
iss
15V
10V
5V
1nF
120V
480V
C
oss
100pF
C
rss
0V
0nC
100nC
200nC
300nC
0V
10V
20V
30V
40V
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
I
C
=50 A)
(
V
GE
=0V,
f
= 1 MHz)
12µs
10µs
8µs
800A
700A
600A
500A
400A
300A
200A
100A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE
,
GATE
–
EMITTETR VOLTAGE
V
GE
,
GATE
–
EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=400V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
(
V
CE
400V,
T
j
150
C)
8
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
D
=0.5
0.2
0.1
10
-1
K/W
R
, ( K / W )
0.18355
0.12996
0.09205
0.03736
0.00703
,
( s )
7.425*10
-2
8.34*10
-3
7.235*10
-4
1.035*10
-4
4.45*10
-5
R
2
0.05
R
1
10
-2
K/W
0.02
0.01
single pulse
C
1
=
1
/
R
1
C
2
=
2
/
R
2
1µs 10µs
100µs 1ms
10ms 100ms
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(
D = t
p
/
T
)
9
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
PG-TO220-3
10
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
1
2
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
11
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
IGP50N60T
TRENCHSTOP
™
Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
12
Rev. 2.8
19.05.2015
IFAG IPC TD VLS
