KEC-Semicon-KTK5132S-RTK-P

KTK5132S  

SEMICONDUCTOR  

N CHANNEL MOS FIELD  

EFFECT TRANSISTOR  

TECHNICAL DATA  

ULTRA-HIGH SPEED SWITCHING APPLICATIONS  

ANALOG SWITCH APPLICATIONS  

FEATURES  

·

2.5 Gate Drive.  

·

Low Threshold Voltage : V

th

=0.5

∼

1.5V.  

·

High Speed.  

·

Small Package.  

·

Enhancement-Mode.  

MAXIMUM RATING

 

(Ta=25

℃

)  

CHARACTERISTIC  

Drain-Source Voltage  

SYMBOL  

V

DS  

V

GSS  

I

D  

RATING  

30  

UNIT  

V

Gate-Source Voltage  

DC Drain Current  

V

±

20  

100  

mA  

mW  

℃

P

D  

Drain Power Dissipation  

Channel Temperature  

Storage Temperature Range  

200  

T

ch  

150  

T

stg  

-55

∼

150  

℃

EQUIVALENT CIRCUIT  

ELECTRICAL CHARACTERISTICS

 

(Ta=25

℃

)  

CHARACTERISTIC  

Gate Leakage Current  

SYMBOL  

TEST CONDITION  

MIN.  

TYP. MAX. UNIT  

I

GSS  

V

(BR)DSS  

I

DSS  

V

GS

=

±

16V, V

DS

=0V  

I

D

=100

μ

A, V

GS

=0V  

–

30  

–

–

–

±

1  

μ

A  

V

Drain-Source Breakdown Voltage  

Drain Cut-off Current  

–

1

1.5  

–

V

DS

=30V, V

GS

=0V  

–

μ

A  

V

V

th  

V

DS

=3V, I

D

=0.1mA  

Gate Threshold Voltage  

Forward Transfer Admittance  

Drain-Source ON Resistance  

Input Capacitance  

0.5  

25  

–

–

|Y

fs

|  

V

DS

=3V, I

D

=10mA  

–

mS  

R

DS(ON)  

C

iss  

I

D

=10mA, V

GS

=2.5V  

V

DS

=3V, V

GS

=0V, f=1MHz  

V

DS

=3V, V

GS

=0V, f=1MHz  

V

DS

=3V, V

GS

=0V, f=1MHz  

4

7

–

Ω

–

19  

7

pF  

pF  

pF  

nS  

nS  

C

rss  

Reverse Transfer Capacitance  

Output Capacitance  

–

–

C

oss  

–

17  

50  

180  

–

t

on  

Turn-on Time  

Turn-off Time  

–

–

Switching Time  

V

DD

=5V, I

D

=10mA, V

GS

=0

∼

5V  

t

off  

–

–

2014. 11. 11  

Revision No : 2  

1/3  

KTK5132S  

2014. 11. 11  

Revision No : 2  

2/3  

KTK5132S  

2014. 11. 11  

Revision No : 2  

3/3