onsemi-NZT560A

Is Now Part of  

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October 2014  

NZT560 / NZT560A  

NPN Low-Saturation Transistor  

Features  

4

• These

 

devices are designed with high-current gain and low-saturation  

voltage with collector currents up to 3 A continuous.  

3

2

1

SOT-223  

1. Base

 

2,4. Collector

 

3. Emitter  

Ordering Information  

Part Number  

NZT560  

Marking  

560  

Package  

SOT-223 4L  

SOT-223 4L  

Packing Method  

T

a

pe and Reel  

NZT560A  

560A  

T

a

pe and Reel  

Absolute Maximum Ratings

(1),(2)  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

V

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

60  

80  

V

5

V

Collector Current – Continuous  

3

A

T

J

, T

STG

Operating and Storage Junction

T

e

mperature Range  

Notes:  

1. These ratings are based on a maximum junction temperature of 150

°

C.  

-55 to +150  

°

C  

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or  

low-duty-cycle operations.  

© 2003 Fairchild Semiconductor Corporation  

NZT560 / NZT560A Rev. 1.1.0  

Thermal Characteristics

(3)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

D  

Parameter  

Max.  

1

Unit  

W

T

o

tal Power Dissipation  

Derate Above 25

°

C  

8

mW/

°

C  

°

C/W  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

125  

Note:  

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CEO  

BV

CBO  

BV

EBO  

Parameter  

Conditions  

Min.  

60  

Max.  

Unit  

V

Collector-Emitter Breakdown Voltage

 

I

C

= 10 mA, I

B

= 0  

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

I

C

= 100

μ

A, I

E

= 0  

80  

V

I

E

= 100

μ

A, I

C

= 0  

5

V

V

CB

= 30 V, I

E

= 0  

100  

10  

nA  

μ

A  

nA  

I

CBO  

I

EBO  

Collector Cut-Off Current  

Emitter Cut-Off Current  

V

CB

= 30 V, I

E

= 0, T

A

= 100°C  

V

EB

= 4 V, I

C

= 0  

100  

I

C

= 100 mA, V

CE

= 2 V  

70  

100  

250  

80  

NZT560  

300  

550  

I

C

= 500 mA, V

CE

= 2 V  

h

FE  

DC Current Gain

(4)  

NZT560A  

I

C

= 1 A, V

CE

= 2 V  

I

C

= 3 A, V

CE

= 2 V  

I

C

= 1 A, I

B

= 100 mA  

25  

300  

450  

400  

1.25  

1

Collector-Emitter Saturation  

Voltage

(4)  

V

NZT560  

mV  

I

C

= 3 A, I

B

= 300 mA  

NZT560A  

V

BE

(sat) Base-Emitter

 

Saturation Voltage

(4)  

I

C

= 1 A, I

B

= 100 mA  

I

C

= 1 A, V

CE

= 2 V  

V

V

V

BE

(on)  

C

obo  

Base-Emitter On Voltage

(4)  

Output Capacitance  

V

CB

= 10 V, I

E

= 0, f = 1.0 MHz  

30  

pF  

I

C

= 100 mA, V

CE

= 5

V

,  

f = 100 MHz  

f

T  

Transition Frequency  

75  

MHz  

Note:  

4. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2.0%  

© 2003 Fairchild Semiconductor Corporation  

NZT560 / NZT560A Rev. 1.1.0  

2

Typical Performance Characteristics  

1.4  

1.2  

1

1.4  

V

ce

= 2.0V  

β

= 10  

1.2  

1

– 40 °C  

– 40 °C  

0.8  

0.6  

0.4  

0.2  

0.8  

25

°

C  

0.6  

25 °C  

0.4  

0.2  

125 °C  

125 °C  

0.001  

0.01  

0.1  

1

10  

0.0001  

0.001  

0.01  

0.1  

1

10  

I

C

– COLLECTOR CURRENT (A)  

I

C

– COLLECTOR CURRENT (A)  

Figure 1. Base-Emitter Saturation Voltage  

vs. Collector Current  

Figure 2. Base-Emitter On Voltage  

vs. Collector Current  

0.8  

450  

400  

350  

300  

250  

200  

150  

100  

50  

f =

 

1.0 MHz  

β = 10  

0.6  

C

ibo  

25°C  

125°C  

0.4  

0.2  

0

– 40°C  

C

obo  

0

0.001  

0.01  

0.1  

1

10  

0.1 0.2  

0.5  

1

2

5

10 20  

50 100  

(mA)  

I

C

– COLLECTOR CURRENT (mA)  

V

CE

– COLLECTOR VOLTAGE (V)  

Figure 3. Collector-Emitter Saturation Voltage  

vs. Collector Current  

Figure 4. Input / Output Capacitance  

vs. Reverse Bias Voltage  

400  

700  

600  

500  

400  

300  

200  

100  

0

V

CE

= 2 V  

NZT560  

NZT560A  

T

A

=125

o

C  

T

A

=150

o

C  

300  

25

o

C  

V

CE

= 2 V  

25

o

C  

200  

-40

o

C  

-40

o

C  

100  

0

0.001  

0.010  

0.100  

1.000  

10.000  

0.001  

0.010  

0.100  

1.000  

10.000  

I

C

– COLLECTOR CURRENT [A]  

I

C

– COLLECTOR CURRENT [A]  

Figure 6. Current Gain vs. Collector Current  

Figure 5. Current Gain vs. Collector Current  

© 2003 Fairchild Semiconductor Corporation  

NZT560 / NZT560A Rev. 1.1.0  

3

6.70  

6.20  

B

0.10  

C B  

3.10  

2.90  

3.25  

4

1.90  

A

3.70  

3.30  

6.10  

1.90  

1

3

0.84  

0.60  

2.30  

2.30  

0.95  

4.60  

0.10  

C B  

LAND PATTERN RECOMMENDATION  

SEE DETAIL A  

1.80 MAX  

7.30  

6.70  

0.08  

C

C

0.10  

0.00  

NOTES: UNLESS OTHERWISE SPECIFIED  

A) DRAWING

 

BASED ON JEDEC REGISTRATION  

TO-261C, VARIATION AA.  

B) ALL

 

DIMENSIONS ARE IN MILLIMETERS.  

C) DIMENSIONS DO NOT INCLUDE BURRS  

OR MOLD FLASH. MOLD FLASH OR BURRS  

DOES NOT EXCEED 0.10MM.  

D) DIMENSIONING AND TOLERANCING PER  

ASME Y14.5M-2009.  

R0.15±0.05  

R0.15±0.05  

10°  

5°  

GAGE  

PLANE  

0.35  

0.20  

E) LANDPATTERN

 

NAME: SOT230P700X180-4BN  

F) DRAWING

 

FILENAME: MKT-MA04AREV3  

10°  

0°  

TYP  

0.25  

10°  

5°  

0.60 MIN  

SEATING  

PLANE  

1.70  

DETAIL A  

SCALE: 2:1  

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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  

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. ON Semiconductor reserves the right to make changes without further notice to any products herein.  

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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