PUOLOP-PTD80N06
| Part # | PUOLOP-PTD80N06 |
Download  | PUOLOP-PTD80N06 |
PTD80N06
60V/80A N-Chnnel MOSFET
Features
D
60V/80A
RDS(ON)=7.3m
@ VGS=10V
◀
G
Lead free and Green Device Available
Low Rds-on to Minimize Conductive Loss
High avalanche Current
S
D
%
100 Avalanche
Tested
Application
G
S
Power Supply
TO-252
DC-DC Converters
UPS
Battery Management System
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Symbol
V
DSS
Parameter
Maximum
Unit
V
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±25
V
GSS
T
C
=25°C
80
I
D
3
Continuous Drain Current
T
C
=100°C
T
C
=25°C
66
320
A
4
Pulsed Drain Current
Avalanche energy
I
DP
EAS
5
PD
246
100
mJ
T
C
=25°C
Maximum Power Dissipation
W
-55~175
°C
T
J,
T
STG
Junction & Storage Temperature Range
Thermal Characteristics
Symbol
Parameter
Typical
1.3
Unit
R
θ
Thermal Resistance-Junction to Case
jc
℃
/W
R
θ
ja
Thermal Resistance-Junction to Ambient
62.5
– 1 –
2018-6-12
PTD80N06
60V/80A N-Chnnel MOSFET
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ
Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V
GS
=0
V
,
I
D
=250uA
V
DS
=60
V
,
V
GS
=0V
60
—
2
—
—
3
—
1
V
uA
V
I
DSS
V
GS(th)
I
GSS
V
DS
=V
GS
,I
D
=250uA
V
GS
=±25
V
, V
DS
=0V
V
GS
=10
V
,
I
D
=40A
4
Gate Leakage Current
—
—
±100
nA
—
—
7.3
—
8
—
1
R
DS(on)
Drain-Source On-Resistance
m
Ω
Diode Characteristics
1
V
SD
I
S
t
rr
Diode Forward Voltage
Diode Continuous Forward Current
Reverse Recovery Time
I
SD
=40A,
GS
=0V
—
—
—
—
—
—
70
1.3
100
—
V
A
nS
nC
3
I
S
=40A,
dI/dt=100A/us
Q
rr
Reverse Recovery Charge
100
—
Dynamic Characteristics
2
C
iss
C
oss
C
rss
t
d(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
4100
370
260
55
65
140
50
—
—
—
—
—
—
—
V
GS
=0
V
,
V
DS
=25V
Frequency=1MHz
pF
nS
V
DD
=34
V
,
I
D
=40A,
V
GS
=10
V
,
(Note1,4)
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
Gate Charge Characteristics
2
—
Q
g
T
o
tal Gate Charge
—
90
V
DD
=48
V
,
I
D
=40A,
V
GS
=10
V
,
(Note1,4)
nC
Q
gs
Q
gd
Gate-to-Source Charge
Gate-to-Drain Charge
—
—
20
31
—
—
Note: 1: Pulse test; pulse width
≦
300us, duty cycle
≦
2%.
2: Guaranteed by design, not subject to production testing.
3: Package limitation current is 100A.Calculated continuous current based on maximum allowable junction temperature.
4: Repetitive rating, pulse width limited by max junction temperature.
5: Starting TJ = 25°C,L = 1mH,IAS = 22A.
– 2 –
2018-6-12
PTD80N06
60V/80A N-Chnnel MOSFET
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Typical Characteristics
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Figure 2. Transfer Characteristics
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Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
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Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
– 3 –
2018-6-12
PTD80N06
60V/80A N-Chnnel MOSFET
Typical Characteristics
(continued)
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vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
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Figure 10. Maximum Drain Current
vs Case Temperature
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Figure 11. Transient Thermal Response Curve
– 4 –
2018-6-12
PTD80N06
60V/80A N-Chnnel MOSFET
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
– 5 –
2018-6-12
