onsemi-FDD9411-F085
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FDD9411
–
F085
®
N-Channel PowerTrench
MOSFET
40 V, 25 A, 7.8 m
Ω
Features
D
Typical R
Typical Q
= 6.2 m
Ω
at V
= 10V, I
= 15 A
GS D
DS(on)
= 15 nC at V
= 10V, I
= 15 A
g(tot)
GS
D
UIS Capability
D
RoHS Compliant
Qualified to AEC Q101
G
G
S
Applications
D-PAK
(TO-252)
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
S
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
Ratings
40
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
GS
±20
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
T
C
= 25°C
25
I
D
A
See Figure 4
43.2
E
AS
P
D
Single Pulse Avalanche Energy
(Note 2)
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
Power Dissipation
Derate Above 25
o
C
48.4
0.32
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
3.1
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
52
Notes:
1: Current
is limited by bondwire configuration.
2: Starting
T =
25°C, L = 0.6mH, I
= 12A, V
= 40V during inductor charging and V
= 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
pad of 2oz copper.
R
is guaranteed by design, while R
is determined by the board design.
The maximum rating
θ
JC
θ
JA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD9411
FDD9411
–
F085
D-PAK(TO-252)
13”
16mm
2500units
1
©2015
Semiconductor Components Industries, LLC.
August-2017,
Rev.
2
Publication Order Number:
FDD9411-F085
/D
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
–
–
–
–
–
–
1
V
V
DS
= 4 0 V ,
T
J
= 25
o
C
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C (Note 4)
–
1
I
GSS
V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
R
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
3.4
6.2
4.0
7.8
14
V
T
J
= 25
o
C
–
–
m
Ω
m
Ω
I
D
= 15A,
T
J
= 175
o
C (Note 4)
11.2
V
GS
= 10V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
1080
340
22
–
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
C
oss
C
rss
R
g
Output Capacitance
–
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
–
f = 1MHz
2.6
15
–
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge
V
GS
= 0 to 10V
V
GS
= 0 to 2V
22.5
nC
nC
nC
nC
V
DD
= 32V
I
D
= 15A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
2
–
–
–
5.3
2.8
Q
gd
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay
Rise Time
–
–
–
–
–
–
–
24
–
ns
ns
ns
ns
ns
ns
8.7
7.2
15.8
4.4
–
–
V
DD
= 20V, I
D
= 15A,
V
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay
Fall Time
–
–
t
off
Turn-Off Time
30
Drain-Source Diode Characteristics
I
SD
= 15A, V
GS
= 0V
I
SD
= 7.5A, V
GS
= 0V
DD
= 32V, I
F
= 15A,
dI
SD
/dt = 100A/
μ
s
–
–
–
–
–
1.25
1.2
53
V
V
SD
Source-to-Drain Diode Voltage
–
V
t
rr
Reverse-Recovery Time
35
20
ns
nC
V
Q
rr
Reverse-Recovery Charge
30
Note:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
2
Typical Characteristics
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10V
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE(
o
C)
T
C
, CASE TEMPERATURE(
o
C)
Figure 2.
Maximum Continuous Drain Current vs.
Case Temperature
Figure 1.
Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1000
T
C
= 25
o
C
FOR TEMPERATURES
V
GS
= 10V
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
100
10
1
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
3
Typical Characteristics
100
10
1
1000
100
10
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
AV
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AS
100us
1ms
10ms
100ms
STARTING T
J
= 25
o
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
STARTING T
J
= 150
o
C
SINGLE PULSE
0.1
T
J
= MAX RATED
o
T
C
= 25
C
0.01
0.1
1
10
100
1E-3
0.01
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to
ON Semiconductor
Application Notes AN7514
and AN7515
Figure 5.
Forward Bias Safe Operating Area
Figure 6.
Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80
μ
s
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
80
10
60
T
J
= 25
o
C
T
J
= 25
o
C
40
T
J
= 175
o
C
1
T
J
= 175
o
C
T
J
= -55
o
C
20
0
0.1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
100
100
V
GS
15V Top
10V
8V
7V
6V
V
GS
15V Top
10V
8V
7V
6V
80
μ
s PULSE WIDTH
Tj=25
o
C
80
60
40
20
0
80
5.5V
5V Bottom
5.5V
5V Bottom
60
40
20
80
μ
s PULSE WIDTH
Tj=175
o
C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
4
Typical Characteristics
120
2.4
2.0
1.6
1.2
0.8
0.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
=
15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
90
60
30
0
T
J
= 25
o
C
T
J
= 175
o
C
I
D
= 15A
V
GS
= 10V
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160 200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11.
R
DSON
vs. Gate Voltage
Figure 12.
Normalized R
DSON
vs. Junction
Temperature
1.5
1.10
V
GS
=
V
DS
I
D
= 1mA
I
D
= 250
μ
A
1.2
0.9
0.6
0.3
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
5000
10
I
D
= 15A
V
DD
= 16V
C
iss
8
1000
V
DD
= 24V
C
oss
6
V
DD
= 20V
4
2
0
100
C
rss
f = 1MHz
V
GS
= 0V
10
0.1
40
1
10
0
4
8
12
16
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 15.
Capacitance vs. Drain to Source
Voltage
Figure 16.
Gate Charge
vs. Gate to Source
Voltage
5
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