STANSON-Tech–ST3421SRG
| Part # | STANSON-Tech–ST3421SRG |
Download  | STANSON-Tech–ST3421SRG |
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
DESCRIPTION
ST3421SRG is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and
low in-line power
loss are required. The product is in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
SOT-23
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-60V/-5.0A, R
DS(ON)
= 150m-ohm (Typ.)
@VGS = -10V
-60V/-2.5A, R
DS(ON)
= 185m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
D
G
1
S
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
21YA
1
2
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GSS
I
D
Typical
Unit
V
-60
±
20
V
T
A
=25
℃
-5.0
-3.5
℃
Continuous Drain CurrentTJ=150
)
A
℃
T
A
=70
Pulsed Drain Current
I
DM
-12
A
Continuous Source Current (Diode Conduction)
I
S
-1.25
A
T
A
=25
℃
1.25
0.8
Power Dissipation
P
D
W
℃
℃
℃
T
A
=70
Operation Junction Temperature
Storgae Temperature Range
T
J
150
-55/150
100
T
STG
℃
R
θ
JA
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition Min
Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=-10uA
-60
V
V
Gate Threshold Voltage
V
DS
=VGS,I
D
=-250uA -1.0
-3.0
±
±
V
DS
=0V,V
GS
= 20V
100
-1
Gate Leakage Current
nA
V
DS
=-48V,V
GS
=0V
V
DS
=-48V,V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
uA
-10
℃
T
J
=55
V
GS
=-10V,I
D
=-5.0A
V
GS
=-4.5V,I
D
=-2.5A
0.160
0.200
0.150
0.185
Ω
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
R
DS(on)
g
fs
V
DS
=-10V,I
D
=-1.7V
I
S
=-1.25A,V
GS
=0V
2.4
S
V
V
SD
-0.8 -1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
16
8
V
DS
=-30V
V
GS
=-10V
I
D
-2A
nC
pF
≡
3.0
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C
iss
C
oss
1200
115
V
DS
=-30V
V
GS
=0V
F=1MH
z
C
rss
7
9
V
DD
=-10V
t
d(on)
Turn-On Time
Turn-Off Time
Ω
R =15
tr
L
109
25
I
D
=-1.0A
V
GEN
=-3V
nS
t
d(off)
tf
Ω
R
G
=2.5
11
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
℃
TYPICAL CHARACTERICTICS
(25 Unless
noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
℃
TYPICAL CHARACTERICTICS
(25 Unless
noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
ST3421SRG
P Channel Enhancement Mode MOSFET
-5.0A
SOT-23 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
ST3421SRG 2013.
Rev.1
