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FDS86141
N-Channel Power Trench
®
MOSFET
100 V, 7 A, 23 m
Ω
Features
General Description
Max r
DS(on)
= 23 m
Ω
at V
GS
= 10 V, I
D
= 7 A
Max r
DS(on)
= 36 m
Ω
at V
GS
= 6 V, I
D
= 5.5 A
High performance trench technology for extremely low r
DS(on)
100% UIL Tested
This
N-Channel
MOSFET
is
produced using ON
Semiconductor‘s advanced
Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintaiin superior switching performance.
Applications
RoHS Compliant
DC-DC Conversion
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
100
±20
7
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
V
V
I
D
A
30
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
121
2.5
mJ
W
T
A
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 1b)
Power Dissipation
1.0
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
2500 units
FDS86141
FDS86141
SO-8
13 ’’
Semiconductor Components Industries, LLC, 2017
January, 2017, Rev. 1.8
Publication Order Number:
FDS86141
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
100
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
67
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 80 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.1
-10
4
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V, I
D
= 7 A
19
27
33
19
23
37
40
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 6 V, I
D
= 5.5 A
m
Ω
V
GS
= 10 V, I
D
= 7 A, T
J
= 125 °C
V
DS
= 10 V, I
D
= 7 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
703
186
8.6
934
247
13
pF
pF
pF
Ω
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
8.3
3.2
17
10
ns
ns
V
DD
= 50
V
,
I
D
= 7 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
14.3
3.2
26
ns
10
ns
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
GS
= 0 V to 5 V
11.8
6.7
16.5
9.4
nC
nC
nC
nC
Q
g(TOT)
V
V
DD
= 50 V
D
= 7 A
I
Q
gs
Q
gd
3.4
3.1
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 7 A
(Note 2)
(Note 2)
0.8
0.8
43
1.3
1.2
69
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 2 A
t
rr
Reverse Recovery Time
ns
I
F
= 7 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
39
62
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a) 50 °C/W when mounted on a
1 in
pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0 %.
o
3. Starting T
= 25
C; N-ch: L = 3 mH, I
= 9 A, V
= 100 V, V
= 10 V.
J
AS
DD
GS
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
30
4
3
2
1
0
V
GS
= 5 V
V
GS
= 5.5 V
V
GS
= 6 V
25
V
GS
= 7 V
V
GS
= 10 V
V
GS
= 6 V
20
15
V
GS
= 5.5 V
V
GS
= 7 V
10
V
GS
= 5 V
5
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
2.0
80
I
D
= 7 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 7 A
60
40
T
J
= 125
o
C
20
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
4
5
6
7
8
9
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
30
30
V
GS
= 0 V
PULSE DURATION = 80
μ
s
10
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
T
J
= 150
o
C
V
DS
= 5 V
T
J
= 25
o
C
1
0.1
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
1000
100
I
D
= 7 A
V
DD
= 50 V
C
iss
8
V
DD
= 25 V
C
oss
6
V
DD
= 75 V
4
2
0
C
rss
f = 1 MHz
= 0 V
10
5
V
GS
0.1
1
10
100
0
3
6
9
12
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s
D r a i n
to Source Voltage
20
8
6
4
2
10
T
J
= 25
o
C
V
GS
= 10 V
T
J
= 100
o
C
V
GS
= 6 V
T
J
= 125
o
C
R
θ
JA
= 50
o
C/W
1
0.01
0
25
0.1
1
10
50
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T
A
,
AMBIENT TEMPERATURE
(
o
C
)
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs Ambient Temperature
500
THIS AREA IS
LIMITED BY r
DS(on)
100
10
100
10
100us
1 ms
1
10 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
100 ms
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.1
1 s
A
= 25
o
C
10 s
DC
T
1
0.01
0.5
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100
600
100
1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse Maximum
Power Dissipation
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
0.01
0.01
t
1
t
2
0.001
SINGLE PULSE
R
θ
JA
= 125
o
C/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
0.0001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
5
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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