Diodes-Incorporated-BCM857BV-7

BCM857BV  

45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563  

Features  

Mechanical Data  



















BV

CEO

> -45V  





Package: SOT563  

I

C

= -100mA High Collector Current  

Package Material: Molded Pla

stic, “Green” Molding Compound

;  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish

—

Matte Tin Annealed over Copper Leadframe;  

Pair of PNP Transistors That Are Intrinsically Matched (Note 1)  

2% Matching on Current Gain (h

FE

)  





2mV Matching on Base-Emitter Voltage (V

BE  

)

e3  

Fully Internally Isolated in a Small Surface Mount Package  

Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)  

Halogen and Antimony Free. “Green” Device (Note 4)  

For automotive applications requiring specific change  

control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP  

capable, and manufactured in IATF 16949 certified  

facilities), please contact us or your local Diodes  

representative.  

Solderable per MIL-STD-202, Method 208  

Weight: 0.003 grams (Approximate)  



SOT563  

C1  

C2  

E2  

B2  

B1  

E1  

Top View  

Pin-Out  

Top View  

Device Symbol  

Ordering Information

(Note 5)  

Product  

Marking  

1U5  

Reel size (inches)  

Tape width (mm)  

Quantity per reel  

3,000  

BCM857BV-7  

7

8

Notes:  

1. Intrinsically matched pair as this is built with adjacent die from the same wafer.  

2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

for more information about Diodes Incorporated’s definitions of Hal

ogen- and Antimony-free, “Green” and  

Lead-free.  

4. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<

1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

Marking Information  

1U5 = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: J = 2022)  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2022  

2023  

2024  

2025  

2026  

2027  

2028  

2029  

2030  

2031  

2032  

2033  

Code  

J

K

L

M

N

O

P

R

S

T

U

V

Aug  

Sep  

Oct  

Nov  

Dec  

Month  

Code  

Jan  

Feb  

Mar  

Apr  

May  

Jun  

Jul  

1

2

3

4

5

6

7

8

9

O

N

D

1 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Collector-Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-50  

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

-45  

V

-5.0  

-100  

-200  

-200  

V

mA  

mA  

mA  

Peak Collector Current  

Peak Base Current  

I

CM  

I

BM  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

P

D  

Value  

500  

Unit  

mW  

Power Dissipation. Total Device (Note 6)  

Power Dissipation. Single Transistor (Note 7)  

Thermal Resistance, Junction to Ambient Air (Note 6)  

Thermal Resistance, Junction to Ambient Air (Note 7)  

Operating and Storage Temperature Range  

357  

mW  

P

D  

+250  

°C/W  

°C/W



 

°C  

R

θ

JA  

+350  

R

θ

JA  

-65 to +150  

T

J

, T

STG  

ESD Ratings

(Note 8)  

Characteristic  

Electrostatic Discharge – Human Body Model  

Electrostatic Discharge – Machine Model  

Symbol  

Value  

4,000  

400  

Unit  

V

JEDEC Class  

ESD HBM  

ESD MM  

3A  

C

V

Notes:  

6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided  

1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state.  

7. Same as Note 6 except for only one active die running.  

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  

2 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

Thermal Characteristics and Derating Information  

See Note 6  

See Note 7  

TEMPERATURE (°C)  

Derating Curve  

3 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic

(Note 9)  

Collector-Base Breakdown Voltage  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

h

FE  

Min  

-50  

-45  

-5  

Typ  

—

Max  

—

Unit  

V

Test Condition  

I

C

= -100µA, I

B

= 0  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

DC Current Gain  

—

—

V

I

C

= -10mA, I

B

= 0  

—

—

V

I

E

= -100µA, I

C

= 0  

200  

0.98  

290  

1

450  

—

—

—

V

CE

= -5.0V, I

C

= -2.0mA  

V

CE

= -5.0V, I

C

= -2.0mA  

DC Current Gain Matching (Note 10)  

h

FE1/

h

FE2  

-50  

-200  

-200  

-400  

I

C

= -10mA, I

B

= -0.5mA  

I

C

= -100mA, I

B

= -5.0mA  

Collector-Emitter Saturation Voltage  

—

mV  

V

CE(sat)  

Base-Emitter Saturation Voltage  

Base-Emitter Voltage  

—

-760  

-650  

—

mV  

mV  

V

BE(sat)  

V

BE(on)  

V

BE1(on) –  

V

BE2(on)  

I

C

= -10mA, I

B

= -0.5mA  

V

CE

= -5.0V, I

C

= -2.0mA  

-600  

-700  

Base-Emitter Voltage Matching (Note 11)  

—

—

2

mV  

V

CE

= -5.0V, I

C

= -2.0mA  

—

—

—

—

-15  

-5.0  

nA  

µA  

V

CB

= -30V  

V

CB

= -30V, T

A

= +150°C  

Collector Cut-Off Current  

Emitter Cut-Off Current  

Gain Bandwidth Product  

I

CBO  

I

EBO  

f

T  

—

—

-100  

nA  

V

EB

= -5.0V, I

C

= 0  

V

CE

= -5.0V, I

C

= -10mA,  

f = 100MHz  

100  

175  

—

MHz  

Collector-Base Capacitance  

Emitter-Base Capacitance  

—

—

—

2.2  

pF  

pF  

C

CBO  

C

EBO  

V

CB

= -10V, f = 1.0MHz  

V

EB

= -0.5V, f = 1.0MHz  

10  

—

Notes:  

9. Short duration pulse test used to minimize self-heating effect.  

10. The smaller of the two values is taken as the numerator.  

11. The smaller of the two values is subtracted from the larger value.  

4 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

Typical Electrical Characteristics

(@T

A

= +25°C unless otherwise specified.)  

1,000  

0.5  

0.4  

100  

0.3  

0.2  

10  

0.1  

1

0

0.1  

10  

1

100  

1

10  

100  

1,000  

I

C

, COLLECTOR CURRENT (mA)  

I ,

 

COLLECTOR CURRENT (mA)  

-I

C

, COLLECTOR CURRENT (mA)  

-I

C

,

C

COLLECTOR CURRENT (mA)  

Fig. 2 Typical DC Current Gain vs. Collector Current  

Fig. 3 Typical Collector-Emitter Saturation Voltage  

Typical Collector-Emitter Saturation Voltage  

vs. Collector Current  

Typical DC Current Gain vs. Collector Current  

vs. Collector Current  

1,000  

100  

10  

1

10  

100  

I

C

, COLLECTOR CURRENT (mA)  

-I ,

 

COLLECTOR CURRENT (mA)  

Fig. 4 Typic

a

C

l Gain-Bandwidth Product vs. Collector Current  

Typical Gain-Bandwidth Product vs. Collector Current  

5 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

Package Outline Dimensions  

Please see

for the latest version.  

SOT563  

b

a

a

SOT563  

Dim Min

 

Max Typ  

0.55 0.60

 

—  

A

b

c

D

E

E1  

e

e1  

L

a

0.15 0.30 0.20  

0.10 0.18 0.11  

1.50 1.70 1.60  

1.55 1.70 1.60  

1.10 1.25 1.20  

E

E1  

L

c

R.01  

—  

—  

0.50  

0.90 1.10 1.00  

0.10 0.30 0.20  

e

e1  

D

8

°

 

9

°  

7

°  

All Dimensions in mm  

A

Suggested Pad Layout  

Please see

for the latest version.  

SOT563  

C

X

Y

Dimensions Value

 

(in mm)  

C

C1  

G

X

X1  

Y

0.500  

1.270  

0.600  

0.300  

1.300  

0.670  

1.940  

Y1  

G

C1  

Y1  

X1  

6 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2  

BCM857BV  

IMPORTANT NOTICE  

DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH  

1.  

REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF  

MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY  

RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

2.  

The Information contained herein is for informational purpose only and is provided only to illustrate the operation

of Diodes’ products  

described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any  

product described herein. This document is intended for skilled and technically trained engin

eering customers and users who design with Diodes’  

products. Diodes’ products may be used to facilitate safety

-related applications; however, in all instances customers and users are responsible for  

(a) selecting the appropriate Diodes products for their a

pplications, (b) evaluating the suitability of Diodes’ products for their intended applications,  

(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements

as well as safety and  

functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control  

techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their  

applications.  

3.  

Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes  

from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use,  

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ages and  

liabilities.  

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Products described herein may be covered by one or more United States, international or foreign patents and pending patent  

applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks  

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ment.  

5.  

Diodes’  

products  

are  

provided  

subject  

to  

Diodes’  

Standard  

T

erms  

and  

Conditions  

of  

Sale  

or other applicable terms. This document does not  

alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any  

products purchased through unauthorized sales channel.  

6.  

Diodes’ products and technology may no

t be used for or incorporated into any products or systems whose manufacture, use or sale is  

prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any

applicable laws or  

regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or  

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against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with  

the applicable laws and regulations, as well as any unintended or unauthorized application.  

7.  

While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain  

technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and  

Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make  

modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described  

herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document  

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Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is  

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unauthorized use.  

9. This Notice may be periodically updated with the most recent version available at

DIODES is a trademark of Diodes Incorporated in the United States and other countries.  

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.  

© 2022 Diodes Incorporated. All Rights Reserved.  

7 of 7  

June 2022  

© Diodes Incorporated  

BCM857BV  

Datasheet number: DS37433 Rev. 4 – 2