NXP-Semicon-BFU580QX

ꢁ

BFU580Q  

ꢀ

7

2

6

NPN wideband silicon RF transistor  

Rev. 1 — 28 April 2014  

Product data sheet  

1. Product

 

profile  

1.1 General

 

description  

NPN silicon microwave transistor for high speed, medium power applications in a plastic,  

3-pin SOT89 package.  

The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium  

power applications up to 2 GHz.  

1.2 Features

 

and benefits  



Low noise, high linearity, high breakdown RF transistor  



AEC-Q101 qualified  



Minimum noise figure (NF

min

) = 0.75 dB at 900 MHz  



Maximum stable gain 14 dB at 900 MHz  



11 GHz f

T

silicon technology  

1.3 Applications  



Applications requiring high supply voltages and high breakdown voltages  



Broadband amplifiers up to 2 GHz  



Low noise, high linearity amplifiers for ISM applications  



Automotive applications (e.g., antenna amplifiers)  

1.4 Quick

 

reference data  

Table 1.  

Quick reference data  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Typ

 

Max Unit  

V

CB  

V

CE  

collector-base voltage  

collector-emitter voltage  

–

–

24  

12  

24  

2

V

–

–

V

shorted base  

open collector  

–

–

V

V

EB  

I

C  

emitter-base voltage  

collector current  

–

–

V

–

30  

–

60  

mA  

[1]  

P

tot  

h

FE  

C

c  

total power dissipation  

DC current gain  

T

sp



120



C  

–

1000 mW  

130  

I

C

= 30 mA; V

CE

= 8 V  

V

CB

= 8 V; f = 1 MHz  

I

C

= 30 mA; V

CE

= 8 V; f = 900 MHz  

60  

–

95  

1.1  

10.5  

collector capacitance  

transition frequency  

–

–

pF  

f

T  

–

GHz  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 1.  

Quick reference data

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[2]  

G

p(max)  

NF

min  

maximum power gain  

minimum noise figure  

I

C

= 30 mA; V

CE

= 8 V; f = 900 MHz  

I

C

= 5 mA; V

CE

= 8 V; f = 900 MHz;



S

=



opt  

–

–

–

14  

–

–

–

dB  

0.75  

13  

dB  

P

L(1dB)  

output power at 1 dB gain  

compression  

I

C

= 30 mA; V

CE

= 8 V; Z

S

= Z

L

= 50



;  

f = 900 MHz  

dBm  

[1] T

sp

is the temperature at the solder point of the collector lead.  

[2] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

2. Pinning

 

information  

Table 2.  

Discrete pinning  

Description  

emitter  

Pin  

1

Simplified outline  

Graphic symbol  

ꢁ

2

collector  

ꢀ

3

base  

ꢂ

ꢀ

ꢁ

ꢂ

DDDꢀꢁꢂꢂꢃꢄꢁ  

3. Ordering

 

information  

Table 3.  

Type number

 

Package  

Name Description  

Ordering information  

Version  

SOT89  

–

BFU580Q  

OM7965  

–

–

plastic surface-mounted package; exposed die pad with good heat transfer; 3 leads  

Customer evaluation kit for BFU580Q and BFU590Q

[1]  

[1] The

 

customer evaluation kit contains the following:  

a) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB)  

b) Unpopulated

 

RF amplifier Printed-Circuit Board (PCB) with emitter degeneration  

c) Four

 

SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)  

d) BFU580Q

 

and BFU590Q samples  

e) USB

 

stick with data sheets, application notes, models, S-parameter and noise files  

4. Marking  

Table 4.  

Marking  

Type number  

Marking  

BFU580Q  

S58  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

2 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

5. Design

 

support  

Table 5.  

Available design support  

Download from the BFU580Q product information page on

.  

Support item  

Available  

yes  

Remarks  

Device models for Agilent EEsof EDA ADS  

SPICE model  

Based on Mextram device model.  

yes  

Based on Gummel-Poon device  

model.  

S-parameters  

yes  

yes  

yes  

yes  

yes  

Noise parameters  

Customer evaluation kit  

Solder pattern  

See

Section 3

and

Section 10

.  

See

Section 10.1  

Application notes  

6. Limiting

 

values  

Table 6.  

Limiting values  

In accordance with the Absolute Maximum Rating System (IEC 60134).  

Symbol Parameter  

Conditions  

open emitter  

open base  

Min Max  

Unit  

V

V

CB  

V

CE  

collector-base voltage  

–

–

–

–

–

30  

16  

30  

3

collector-emitter voltage  

V

shorted base  

open collector  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

V

100  

mA  

T

stg  

V

ESD  

storage temperature  

electrostatic discharge voltage  



65 +150



C  

Human Body Model (HBM) According to JEDEC  

standard 22-A114E  

–



150  

V

Charged Device Model (CDM) According to  

JEDEC standard 22-C101B  

–



2  

kV  

7. Recommended

 

operating conditions  

Table 7.  

Symbol  

V

CB  

Characteristics  

Parameter  

Conditions  

open emitter  

open base  

Min Typ Max  

Unit  

V

collector-base voltage  

collector-emitter voltage  

–

–

–

–

–

–

–

–

–

24  

V

CE  

–

12  

V

shorted base  

open collector  

–

24  

V

V

EB  

I

C  

emitter-base voltage  

collector current  

–

2

V

–

60  

mA  

dBm  



C  

mW  

P

i  

input power  

Z

S

= 50

  

–

10  

T

j  

junction temperature  

total power dissipation  



40  

+150  

1000  

[1]  

P

tot  

T

sp



120



C  

–

[1] T

sp

is the temperature at the solder point of the collector lead.  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

3 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

8. Thermal

 

characteristics  

Table 8.  

Thermal characteristics  

Symbol Parameter  

Conditions  

Typ Unit  

[1]  

R

th(j-sp)  

thermal resistance from junction to solder point  

30  

K/W  

[1] T

sp

is the temperature at the solder point of the collector lead.  

T

sp

has the following relation to the ambient temperature T

amb  

T

sp

= T

amb

+ P



R

th(sp-a)  

:

With P being the power dissipation and R

th(sp-a)

being the thermal resistance between the solder point and  

ambient. R

th(sp-a)

is determined by the heat transfer properties in the application.  

The heat transfer properties are set by the application board materials, the board layout and the  

environment e.g. housing.  

DDDꢀꢁꢂꢅꢆꢅꢁ  

ꢂꢁꢃꢃ  

3

3  

WRW  

ꢊP:ꢋ  

ꢂꢃꢃꢃ  

ꢇꢃꢃ  

ꢄꢃꢃ  

ꢈꢃꢃ  

ꢁꢃꢃ  

ꢃ

ꢃ

ꢀꢃ  

ꢄꢃ  

ꢅꢃ  

ꢂꢁꢃ  

ꢂꢆꢃ  

ꢂꢇꢃ  

7

VS  

ꢉꢊƒ&ꢋ  

Fig 1.

 

Power derating curve  

9. Characteristics  

Table 9.  

Characteristics  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

V

(BR)CBO

collector-base breakdown voltage  

V

(BR)CEO

collector-emitter breakdown voltage  

I

C

= 100 nA; I

E

= 0 mA  

I

C

= 150 nA; I

B

= 0 mA  

24  

12  

–

–

–

V

–

–

V

I

C  

collector current  

30  

<1  

60  

mA  

nA  

I

CBO  

h

FE  

C

e  

C

re  

C

c  

collector-base cut-off current  

DC current gain  

I

E

= 0 mA; V

CB

= 8 V  

I

C

= 30 mA; V

CE

= 8 V  

V

EB

= 0.5 V; f = 1 MHz  

V

CE

= 8 V; f = 1 MHz  

V

CB

= 8 V; f = 1 MHz  

–

–

60 95  

130  

–

emitter capacitance  

feedback capacitance  

collector capacitance  

transition frequency  

–

–

–

–

1.3  

pF  

0.71 –  

1.1  

10.5 –  

pF  

–

pF  

f

T  

I

C

= 30 mA; V

CE

= 8 V; f = 900 MHz  

GHz  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

4 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

[1]  

G

p(max)  

maximum power gain  

insertion power gain  

minimum noise figure  

f = 433 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

18.5 –  

dB  

dB  

dB  

I

C

= 20 mA  

20  

20  

–

–

I

C

= 30 mA  

[1]  

[1]  

f = 900 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

14  

14  

14  

–

–

–

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

8.5  

8.5  

8.5  

–

–

–

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  



s

21



2  

f = 433 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

16.5 –  

18.5 –  

18.5 –  

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  

f = 900 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

11  

–

dB  

dB  

dB  

I

C

= 20 mA  

12.5 –  

12.5 –  

I

C

= 30 mA  

f = 1800 MHz; V

CE

= 8 V  

I

C

= 5 mA  

–

–

–

6

7

7

–

–

–

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  

NF

min  

f = 433 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

0.7  

–

dB  

dB  

dB  

I

C

= 20 mA  

1.05 –  

1.2  

I

C

= 30 mA  

–

f = 900 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

0.75 –  

1.05 –  

1.25 –  

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  

f = 1800 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

0.85 –  

dB  

dB  

dB  

I

C

= 20 mA  

1.1  

1.3  

–

–

I

C

= 30 mA  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

5 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

Table 9.  

Characteristics

…continued  

T

amb

= 25



C unless otherwise specified  

Symbol Parameter  

Conditions  

Min Typ

 

Max Unit  

G

ass  

associated gain  

f = 433 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

18  

–

dB  

dB  

dB  

I

C

= 20 mA  

18.5 –  

18.5 –  

I

C

= 30 mA  

f = 900 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

12  

–

dB  

dB  

dB  

I

C

= 20 mA  

12.5 –  

12.5 –  

I

C

= 30 mA  

f = 1800 MHz; V

CE

= 8 V;



S

=



opt  

I

C

= 5 mA  

–

–

–

6.5  

7

–

–

–

dB  

dB  

dB  

I

C

= 20 mA  

I

C

= 30 mA  

7

P

L(1dB)  

output power at 1 dB gain compression

 

f = 433 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 20 mA  

–

–

13  

16  

–

–

dBm  

dBm  

I

C

= 30 mA  

f = 900 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 20 mA  

–

–

13  

15  

–

–

dBm  

dBm  

I

C

= 30 mA  

f = 1800 MHz; V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 20 mA  

I

C

= 30 mA  

–

–

13.5 –  

15  

dBm  

dBm  

–

IP3

o  

output third-order intercept point  

f

1

= 433 MHz; f

2

= 434 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 20 mA  

I

C

= 30 mA  

–

–

22.5 –  

25.5 –  

dBm  

dBm  

f

1

= 900 MHz; f

2

= 901 MHz; V

CE

= 8 V;  

Z

S

= Z

L

= 50

  

I

C

= 20 mA  

I

C

= 30 mA  

–

–

22.5 –  

24.5 –  

dBm  

dBm  

f

1

= 1800 MHz; f

2

= 1801 MHz;  

V

CE

= 8 V; Z

S

= Z

L

= 50

  

I

C

= 20 mA  

I

C

= 30 mA  

–

–

23  

–

dBm  

dBm  

24.5 –  

[1] If

 

K > 1 then G

p(max)

is the maximum power gain. If K



1 then G

p(max)

= MS

G

.  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

6 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

9.1 Graphs  

DDDꢀꢁꢂꢂꢄꢁꢄ  

ꢀꢄ  

ꢀꢃ  

ꢁꢈ  

ꢂꢇ  

ꢂꢁ  

ꢄ

,

&

ꢊP$ꢋ  

ꢊꢌꢋ  

ꢊꢄꢋ  

ꢊꢆꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢃ

ꢃ

ꢂ

ꢁ

ꢀ

ꢈ

ꢆ

ꢄ

ꢌ

ꢇ

9

ꢉꢊ9ꢋ  

&(  

T

amb

= 25



C.  

(1)  

I

B

= 25



A  

(2) I

B

= 75



A  

(3) I

B

= 125



A  

(4)  

I

B

= 175



A  

(5) I

B

= 225



A  

(6) I

B

= 275



A  

(7)  

I

B

= 325



A  

Fig 2.

 

Collector current as a function of collector-emitter voltage; typical values  

DDDꢀꢁꢂꢅꢆꢅꢂ  

DDDꢀꢁꢂꢅꢆꢅꢅ  

ꢂꢆꢃ  

)(  

ꢂꢆꢃ  

K

)(  

K

ꢂꢁꢆ  

ꢂꢃꢃ  

ꢌꢆ  

ꢆꢃ  

ꢁꢆ  

ꢃ

ꢂꢁꢆ  

ꢂꢃꢃ  

ꢌꢆ  

ꢆꢃ  

ꢁꢆ  

ꢃ

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢃ

ꢆ

ꢂꢃ  

ꢂꢆ  

ꢁꢃ  

ꢁꢆ  

ꢀꢃ  

ꢀꢆ  

ꢈꢃ  

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

, ꢉꢊP$ꢋ  

&

ꢆꢃ  

,

ꢉꢊP$ꢋ  

&

T

amb

= 25



C.  

(2) V

CE

= 8.0 V  

V

(1)  

V

(1) T

amb

=



40



C  

(2) T

amb

= +25



C  

(3) T

amb

= +125



C  

Fig 3.

 

DC current gain as a function of collector  

current; typical values  

Fig 4.

 

DC current gain as a function of collector  

current; typical values  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

7 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢁꢇ  

DDDꢀꢁꢂꢂꢄꢂꢁ  

ꢂꢃ  

ꢎꢂ  

,

,

%

&

ꢊP$ꢋ  

ꢊP$ꢋ  

ꢂꢃ  

ꢎꢂ  

ꢂꢃ  

ꢂꢃ  

ꢎꢀ  

ꢎꢆ  

ꢎꢌ  

ꢂꢃ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢎꢀ  

ꢎꢆ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢃꢍꢆ  

ꢃꢍꢄ  

ꢃꢍꢌ  

ꢃꢍꢇ  

ꢃꢍꢅ  

ꢉꢊ9ꢋ  

ꢂꢍꢃ  

ꢃꢍꢆ  

ꢃꢍꢄ  

ꢃꢍꢌ  

ꢃꢍꢇ  

ꢃꢍꢅ  

9 ꢉꢊ9ꢋ  

%(  

ꢂꢍꢃ  

9

%(  

T

amb

= 25



C.  

T

amb

= 25



C.  

(1) V

CE

= 3.0 V  

(2) V

CE

= 8.0 V  

(1) V

CE

= 3.0 V  

(2) V

CE

= 8.0 V  

Fig 5.

 

Collector current as a function of base-emitter  

voltage; typical values  

Fig 6.

 

Base current as a function of base-emitter  

voltage; typical values  

DDDꢀꢁꢂꢅꢆꢅꢆ  

DDDꢀꢁꢂꢂꢄꢂꢂ  

ꢎꢈ  

ꢂꢃ  

%5  

ꢊ$ꢋ  

ꢂꢍꢀ  

,

&

F

ꢊS)ꢋ  

ꢂꢍꢁꢌ  

ꢎꢆ  

ꢎꢄ  

ꢎꢌ  

ꢎꢇ  

ꢂꢃ  

ꢂꢍꢁꢈ  

ꢂꢍꢁꢂ  

ꢂꢍꢂꢇ  

ꢂꢍꢂꢆ  

ꢂꢍꢂꢁ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢂꢃ  

ꢂꢃ  

ꢂꢃ  

ꢂ

ꢂꢍꢈ  

ꢂꢍꢇ  

ꢁꢍꢁ  

ꢁꢍꢄ  

ꢉꢊ9ꢋ  

ꢀ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

9

9

ꢉꢊ9ꢋ  

(%  

&%  

V

CE

= 3 V.  

I

C

= 0 mA; f = 1 MHz; T

amb

= 25



C.  

(1) T

amb

=



40



C  

(2) T

amb

= +25



C  

(3)  

T

amb

= +125



C  

Fig 7.

 

Reverse base current as a function of  

emitter-base voltage; typical values  

Fig 8.

 

Collector capacitance as a function of  

collector-base voltage; typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

8 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢂꢅ  

ꢂꢁ  

I

7

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊ*+]ꢋ  

ꢂꢃ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢇ

ꢄ

ꢈ

ꢁ

ꢃ

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

ꢆꢃ  

,

&

ꢉꢊP$ꢋ  

T

amb

= 25



C.  

(1) V

CE

= 3.3 V  

(2) V

CE

= 5.0 V  

(3)  

V

CE

= 8.0 V  

(4) V

CE

= 12.0 V  

Fig 9.

 

Transition frequency as a function of collector current; typical values  

DDDꢀꢁꢂꢂꢄꢂꢆ  

DDDꢀꢁꢂꢂꢄꢂꢈ  

ꢈꢃ  

ꢀꢃ  

ꢁꢃ  

ꢂꢃ  

ꢃ

ꢈꢃ  

ꢀꢃ  

ꢁꢃ  

ꢂꢃ  

ꢃ

*

ꢊG%ꢋ  

*

ꢊG%ꢋ  

06*  

06*  

*

*  

*

*  

SꢊPD[ꢋ  

SꢊPD[ꢋ  

ꢁ

ꢁ

_

_

V

V  

ꢁꢂ  

_

_

_

V

V  

ꢁꢂ  

_

ꢃ

ꢆꢃꢃ  

ꢂꢃꢃꢃ  

ꢂꢆꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢆꢃꢃ  

ꢀꢃꢃꢃ  

ꢃ

ꢆꢃꢃ  

ꢂꢃꢃꢃ  

ꢂꢆꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢆꢃꢃ  

ꢀꢃꢃꢃ  

Iꢉꢊ0+]ꢋ  

Iꢉꢊ0+]ꢋ  

I

C

= 20 mA; V

CE

= 8 V; T

amb

= 25



C.  

I

C

= 30 mA; V

CE

= 8 V; T

amb

= 25



C.  

Fig 10.

 

Gain as a function of frequency; typical values

 

Fig 11.

 

Gain as a function of frequency; typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

9 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢂꢃ  

DDDꢀꢁꢂꢂꢄꢂꢉ  

ꢁꢆ  

ꢁ

ꢁꢆ  

_

_

V

V  

ꢁꢂ  

_

*

SꢊPD[ꢋ  

ꢊꢂꢋ  

ꢊG%ꢋ  

ꢊG%ꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢁꢋ  

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢆꢋ  

ꢊꢆꢋ  

ꢃ

ꢃ

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

ꢉꢊP$ꢋ  

ꢆꢃ  

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

ꢆꢃ  

,

&

,

&

ꢉꢊP$ꢋ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 12.

 

Insertion power gain as a function of collector  

current; typical values  

Fig 13.

 

Maximum power gain as a function of collector  

current; typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

10 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢂꢊ  

DDDꢀꢁꢂꢂꢄꢂꢄ  

ꢁꢆ  

ꢁ

ꢁꢆ  

_

_

V

V  

ꢁꢂ  

_

*

SꢊPD[ꢋ  

ꢊꢂꢋ  

ꢊG%ꢋ  

ꢊG%ꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢁꢋ  

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢈꢋ  

ꢊꢆꢋ  

ꢊꢆꢋ  

ꢃ

ꢃ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

9

ꢉꢊ9ꢋ  

9

ꢉꢊ9ꢋ  

&(  

&(  

I

C

= 20 mA; T

amb

= 25



C.  

I

C

= 30 mA; T

amb

= 25



C.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

If K >1 then G

p(max)

= maximum power gain. If K < 1 then  

G

p(max)

= MS

G

.  

(1) f

 

= 300 MHz  

(2) f

 

= 433 MHz  

(3) f

 

= 800 MHz  

(4) f

 

= 900 MHz  

(5) f

 

= 1800 MHz  

Fig 14.

 

Insertion power gain as a function of  

collector-emitter voltage; typical values  

Fig 15.

 

Maximum power gain as a function of  

collector-emitter voltage; typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

11 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

ꢂ

ꢃꢍꢆ  

ꢁ

ꢃꢍꢁ  

ꢆ

ꢂꢃ  

ꢃꢍꢁ  

ꢃꢍꢆ  

ꢂ

ꢁ

ꢆ

ꢂꢃ  

’

ꢃꢍꢃ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢎꢂꢃ  

ꢎꢆ  

ꢎꢃꢍꢁ  

ꢎꢁ  

ꢎꢃꢍꢆ  

ꢎꢂ  

DDDꢀꢁꢂꢂꢄꢂꢇ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 20 mA  

(2)

C

= 30 mA  

I

Fig 16.

 

Input reflection coefficient (s

11

); typical values  

ꢂ

ꢃꢍꢆ  

ꢁ

ꢃꢍꢁ  

ꢆ

ꢂꢃ  

ꢃꢍꢁ  

ꢃꢍꢆ  

ꢂ

ꢁ

ꢆ

ꢂꢃ  

’

ꢃꢍꢃ  

ꢎꢂꢃ  

ꢎꢆ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢎꢃꢍꢁ  

ꢎꢁ  

ꢎꢃꢍꢆ  

ꢎꢂ  

DDDꢀꢁꢂꢂꢄꢅꢁ  

V

CE

= 8 V; 40 MHz



f



3 GHz.  

(1) I

C

= 20 mA  

(2) I

C

= 30 mA  

Fig 17.

 

Output reflection coefficient (s

22

); typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

12 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢂꢄꢅꢂ  

DDDꢀꢁꢂꢂꢄꢅꢅ  

ꢀꢃ  

ꢁꢃ  

,

,

3

3

ꢀ

ꢀ  

3

3  

/ꢊꢂG%ꢋ  

R

ꢊG%Pꢋ  

ꢁꢆ  

ꢊG%Pꢋ  

ꢂꢄ  

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢂꢁ  

ꢇ

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢂꢋ  

ꢈ

ꢃ

ꢃ

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

ꢉꢊP$ꢋ  

ꢆꢃ  

ꢃ

ꢂꢃ  

ꢁꢃ  

ꢀꢃ  

ꢈꢃ  

ꢆꢃ  

,

&

,

&

ꢉꢊP$ꢋ  

V

CE

= 8 V; T

amb

= 25



C.  

V

CE

= 8 V; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

Fig 18.

 

Output third-order intercept point as a function  

of collector current; typical values  

Fig 19.

 

Output power at 1 dB gain compression as a  

function of collector current; typical values  

DDDꢀꢁꢂꢂꢄꢅꢆ  

DDDꢀꢁꢂꢂꢄꢅꢈ  

ꢀꢃ  

ꢁꢃ  

,

,

3

3

ꢀ

ꢀ  

3

3  

/ꢊꢂG%ꢋ  

R

ꢊG%Pꢋ  

ꢁꢆ  

ꢊG%Pꢋ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢂꢄ  

ꢊꢂꢋ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢁꢃ  

ꢂꢆ  

ꢂꢃ  

ꢆ

ꢂꢁ  

ꢇ

ꢈ

ꢃ

ꢃ

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

ꢃ

ꢁ

ꢈ

ꢄ

ꢇ

ꢂꢃ  

ꢂꢁ  

ꢂꢈ  

9

ꢉꢊ9ꢋ  

9

ꢉꢊ9ꢋ  

&(  

&(  

I

C

= 30 mA; T

amb

= 25



C.  

I

C

= 30 mA; T

amb

= 25



C.  

(1) f

1

= 433 MHz; f

2

= 434 MHz  

(2) f

1

= 900 MHz; f

2

= 901 MHz  

(3) f

1

= 1800 MHz; f

2

= 1801 MHz  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

Fig 20.

 

Output third-order intercept point as a function  

of collector-emitter voltage; typical values  

Fig 21.

 

Output power at 1 dB gain compression as a  

function of collector-emitter voltage;  

typical values  

BFU580Q  

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Product data sheet  

Rev. 1 — 28 April 2014  

13 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

DDDꢀꢁꢂꢅꢆꢊꢆ  

DDDꢀꢁꢂꢅꢆꢊꢁ  

ꢁ

ꢁ

1

1

)

)  

1

1

)

)  

PLQ  

ꢊG%ꢋ  

PLQ  

ꢊG%ꢋ  

ꢂꢍꢄ  

ꢂꢍꢄ  

ꢂꢍꢁ  

ꢃꢍꢇ  

ꢃꢍꢈ  

ꢃ

ꢊꢇꢋ  

ꢊꢌꢋ  

ꢊꢄꢋ  

ꢂꢍꢁ  

ꢃꢍꢇ  

ꢃꢍꢈ  

ꢃ

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢊꢆꢋ  

ꢊꢈꢋ  

ꢊꢀꢋ  

ꢊꢁꢋ  

ꢊꢂꢋ  

ꢎꢂ  

ꢁ

ꢂꢃ  

ꢂ

ꢂꢃ  

ꢂꢃ  

ꢃ

ꢆꢃꢃ  

ꢂꢃꢃꢃ  

ꢂꢆꢃꢃ  

ꢁꢃꢃꢃ  

ꢁꢆꢃꢃ  

,

&

ꢉꢊP$ꢋ  

Iꢉꢊ0+]ꢋ  

V

CE

= 8 V; T

amb

= 25



C;



S

=



opt  

.

V

CE

= 8 V; T

amb

= 25



C;



S

=



opt

.  

(1) f

 

= 433 MHz  

(2) f

 

= 900 MHz  

(3) f

 

= 1800 MHz  

(1) I

C

= 1 mA  

(2) I

C

= 2 mA  

(3)  

I

C

= 3 mA  

(4) I

C

= 5 mA  

(5) I

C

= 10 mA  

(6)  

I

C

= 20 mA  

(7) I

C

= 30 mA  

(8) I

C

= 45 mA  

Fig 22.

 

Minimum noise figure as a function of  

collector current; typical values  

Fig 23.

 

Minimum noise figure as a function of  

frequency; typical values  

BFU580Q  

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© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

14 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

ꢂ

ꢃꢍꢆ  

ꢁ

ꢃꢍꢁ  

ꢆ

ꢊꢂꢋ  

ꢂꢃ  

ꢊꢁꢋ  

ꢊꢀꢋ  

ꢁ

ꢃꢍꢁ  

ꢃꢍꢆ  

ꢂ

ꢆ

ꢂꢃ  

’

ꢊꢈꢋ  

ꢃꢍꢃ  

ꢊꢆꢋ  

ꢎꢂꢃ  

ꢎꢆ  

ꢊꢄꢋ  

ꢊꢌꢋ  

ꢎꢃꢍꢁ  

ꢊꢇꢋ  

ꢎꢁ  

ꢎꢃꢍꢆ  

ꢎꢂ  

DDDꢀꢁꢂꢅꢆꢊꢉ  

V

CE

= 8 V; 400 MHz



f



2 GHz.  

(1) I

C

= 1 mA  

(2)

C

= 2 mA  

I

(3) I

C

= 3 mA  

(4) I

C

= 5 mA  

(5)  

I

C

= 10 mA  

(6) I

C

= 20 mA  

(7) I

C

= 30 mA  

(8)  

I

C

= 45 mA  

Fig 24.

 

Optimum reflection coefficient (



opt

); typical values  

10. Application information  

More information about the following application example can be found in the application  

notes. See

Section 5 “Design support”

.  

The following application example can be implemented using the evaluation kit. See  

Section 3 “Ordering information”

for the order type number.  

The following application example can be simulated using the simulation package. See  

Section 5 “Design support”

.  

BFU580Q  

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© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

15 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

10.1 Application

 

example: FM LNA  

FM LNA, optimized for low noise.  

More detailed information of the application example can be found in the application note:  

AN11499.  

9

ꢉꢆꢉ9  

&&  

ꢈꢌꢉQ)  

ꢀꢀꢃꢉS)  

ꢄꢇꢉȍ  

ꢈꢌꢉQ)  

ꢀꢀꢃꢉS)  

ꢇꢍꢁꢉNȍ  

ꢂꢍꢁꢉNȍ  

ꢆꢄꢉȍ  

ꢀꢀꢃꢉS)  

ꢀꢀꢃꢉS)  

5)ꢉRXWSXW  

ꢊ60$ꢋ  

ꢀꢀꢃꢉS)  

5)ꢉLQSXW  

ꢊ60$ꢋ  

’87  

DDDꢀꢁꢂꢅꢄꢉꢊ  

Fig 25.

 

Schematic FM LNA  

Remark: fine tuning of components maybe required depending on PCB parasitics.  

Table 10.

 

Application performance data at 98 MHz  

I

CC

= 25 mA; V

CC

= 5 V  

Symbol Parameter  

Conditions  

Min Typ Max Unit  



s

21



2  

NF  

insertion power gain  

noise figure  

–

–

–

22  

1.6  

15  

–

–

–

dB  

dB  

IP3

o  

output third-order intercept point

 

f = 88 MHz to 108 MHz;  

carrier spacing = 100 kHz  

dBm  

BFU580Q  

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© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

16 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

11. Package

 

outline  

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(

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Sꢂ  

H

ꢂ

H

ꢃ

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ꢈꢉPP  

VFDOH  

‘,0(16,216ꢂꢃPPꢂDUHꢂWKHꢂRULJLQDOꢂGLPHQVLRQVꢄ  

81,7  

$

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E

E

F

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(

H

H

+

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Z

Sꢈ  

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ꢈ

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ꢂꢍꢄꢉ  

ꢂꢍꢈ  

ꢃꢍꢈꢇꢉ ꢃꢍꢆꢀꢉ  

ꢃꢍꢀꢆ ꢃꢍꢈꢃ  

ꢂꢍꢇꢉ  

ꢂꢍꢈ  

ꢃꢍꢈꢈꢉ  

ꢃꢍꢁꢀ  

ꢈꢍꢄꢉ  

ꢈꢍꢈ  

ꢁꢍꢄꢉ  

ꢁꢍꢈ  

ꢈꢍꢁꢆꢉ  

ꢀꢍꢌꢆ  

ꢂꢍꢁꢉ  

ꢃꢍꢇ  

PP  

ꢀꢍꢃ  

ꢂꢍꢆ  

ꢃꢍꢂꢀ  

ꢂ5()(5(1&(6  

(8523($1ꢂ  

352-(&7,21  

287/,1(ꢂ  

9(56,21  

,668(ꢂ’$7(  

ꢂ,(&  

ꢂ-(‘(&  

ꢂ-(,7$  

6&ꢎꢄꢁ  

ꢃꢄꢎꢃꢀꢎꢂꢄꢉ  

ꢃꢄꢎꢃꢇꢎꢁꢅ  

ꢉ627ꢇꢅ  

72ꢎꢁꢈꢀ  

Fig 26.

 

Package outline SOT89  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

17 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

12. Handling information  

CAUTION  

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  

electrostatic sensitive devices.  

Such precautions are described in the

ANSI/ESD S20.20

,

IEC/ST 61340-5

,

JESD625-A

or  

equivalent standards.  

13. Abbreviations  

Table 11.

 

Abbreviations  

Acronym  

AEC  

Description  

Automotive Electronics Council  

Frequency Modulation  

FM  

ISM  

Industrial, Scientific and Medical  

Low-Noise Amplifier  

LNA  

MSG  

NPN  

SMA  

Maximum Stable Gain  

Negative-Positive-Negative  

SubMiniature version A  

14. Revision history  

Table 12.

 

Revision history  

Document ID  

Release date  

20140428  

Data sheet status  

Change notice  

Supersedes  

BFU580Q v.1  

Product data sheet  

–

–

BFU580Q  

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© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

18 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

15. Legal information  

15.1 Data

 

sheet status  

Document status

[1][2]  

Product status

[3]  

Development  

Definition  

Objective [short] data sheet  

This document contains data from the objective specification for product development.  

This document contains data from the preliminary specification.  

This document contains the product specification.  

Preliminary [short] data sheet

 

Qualification  

Product [short] data sheet

 

Production  

[1]  

[2]  

[3]  

Please consult the most recently issued document before initiating or completing a design.  

The term ‘short data sheet’ is explained in section “Definitions”.  

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  

information is available on the Internet at URL

.  

Suitability for use in automotive applications —

This NXP  

15.2 Definitions  

Semiconductors product has been qualified for use in automotive  

applications. Unless otherwise agreed in writing, the product is not designed,  

authorized or warranted to be suitable for use in life support, life-critical or  

safety-critical systems or equipment, nor in applications where failure or  

malfunction of an NXP Semiconductors product can reasonably be expected  

to result in personal injury, death or severe property or environmental  

damage. NXP Semiconductors and its suppliers accept no liability for  

inclusion and/or use of NXP Semiconductors products in such equipment or  

applications and therefore such inclusion and/or use is at the customer’s own  

risk.  

Draft —

The document is a draft version only. The content is still under  

internal review and subject to formal approval, which may result in  

modifications or additions. NXP Semiconductors does not give any  

representations or warranties as to the accuracy or completeness of  

information included herein and shall have no liability for the consequences of  

use of such information.  

Short data sheet —

A short data sheet is an extract from a full data sheet  

with the same product type number(s) and title. A short data sheet is intended  

for quick reference only and should not be relied upon to contain detailed and  

full information. For detailed and full information see the relevant full data  

sheet, which is available on request via the local NXP Semiconductors sales  

office. In case of any inconsistency or conflict with the short data sheet, the  

full data sheet shall prevail.  

Applications —

Applications that are described herein for any of these  

products are for illustrative purposes only. NXP Semiconductors makes no  

representation or warranty that such applications will be suitable for the  

specified use without further testing or modification.  

Customers are responsible for the design and operation of their applications  

and products using NXP Semiconductors products, and NXP Semiconductors  

accepts no liability for any assistance with applications or customer product  

design. It is customer’s sole responsibility to determine whether the NXP  

Semiconductors product is suitable and fit for the customer’s applications and  

products planned, as well as for the planned application and use of  

customer’s third party customer(s). Customers should provide appropriate  

design and operating safeguards to minimize the risks associated with their  

applications and products.  

Product specification —

The information and data provided in a Product  

data sheet shall define the specification of the product as agreed between  

NXP Semiconductors and its customer, unless NXP Semiconductors and  

customer have explicitly agreed otherwise in writing. In no event however,  

shall an agreement be valid in which the NXP Semiconductors product is  

deemed to offer functions and qualities beyond those described in the  

Product data sheet.  

NXP Semiconductors does not accept any liability related to any default,  

damage, costs or problem which is based on any weakness or default in the  

customer’s applications or products, or the application or use by customer’s  

third party customer(s). Customer is responsible for doing all necessary  

testing for the customer’s applications and products using NXP  

Semiconductors products in order to avoid a default of the applications and  

the products or of the application or use by customer’s third party  

customer(s). NXP does not accept any liability in this respect.  

15.3 Disclaimers  

Limited warranty and liability —

Information in this document is believed to  

be accurate and reliable. However, NXP Semiconductors does not give any  

representations or warranties, expressed or implied, as to the accuracy or  

completeness of such information and shall have no liability for the  

consequences of use of such information. NXP Semiconductors takes no  

responsibility for the content in this document if provided by an information  

source outside of NXP Semiconductors.  

Limiting values —

Stress above one or more limiting values (as defined in  

the Absolute Maximum Ratings System of IEC 60134) will cause permanent  

damage to the device. Limiting values are stress ratings only and (proper)  

operation of the device at these or any other conditions above those given in  

the Recommended operating conditions section (if present) or the  

Characteristics sections of this document is not warranted. Constant or  

repeated exposure to limiting values will permanently and irreversibly affect  

the quality and reliability of the device.  

In no event shall NXP Semiconductors be liable for any indirect, incidental,  

punitive, special or consequential damages (including – without limitation – lost  

profits, lost savings, business interruption, costs related to the removal or  

replacement of any products or rework charges) whether or not such  

damages are based on tort (including negligence), warranty, breach of  

contract or any other legal theory.  

Notwithstanding any damages that customer might incur for any reason  

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  

customer for the products described herein shall be limited in accordance  

with the

T

e

rms and conditions of commercial sale

of NXP Semiconductors.  

Terms and conditions of commercial sale —

NXP Semiconductors  

products are sold subject to the general terms and conditions of commercial  

sale, as published at

, unless otherwise  

agreed in a valid written individual agreement. In case an individual  

agreement is concluded only the terms and conditions of the respective  

agreement shall apply. NXP Semiconductors hereby expressly objects to  

applying the customer’s general terms and conditions with regard to the  

purchase of NXP Semiconductors products by customer.  

Right to make changes —

NXP Semiconductors reserves the right to make  

changes to information published in this document, including without  

limitation specifications and product descriptions, at any time and without  

notice. This document supersedes and replaces all information supplied prior  

to the publication hereof.  

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

19 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

No offer to sell or license —

Nothing in this document may be interpreted or  

construed as an offer to sell products that is open for acceptance or the grant,  

conveyance or implication of any license under any copyrights, patents or  

other industrial or intellectual property rights.  

Translations —

A non-English (translated) version of a document is for  

reference only. The English version shall prevail in case of any discrepancy  

between the translated and English versions.  

Export control —

This document as well as the item(s) described herein  

may be subject to export control regulations. Export might require a prior  

authorization from competent authorities.  

15.4 Trademarks  

Notice: All referenced brands, product names, service names and trademarks  

are the property of their respective owners.  

Quick reference data —

The Quick reference data is an extract of the  

product data given in the Limiting values and Characteristics sections of this  

document, and as such is not complete, exhaustive or legally binding.  

16. Contact information  

For more information, please visit:

For sales office addresses, please send an email to:

BFU580Q  

All information provided in this document is subject to legal disclaimers.  

© NXP Semiconductors N.V. 2014. All rights reserved.  

Product data sheet  

Rev. 1 — 28 April 2014  

20 of 21  

BFU580Q  

NXP Semiconductors  

NPN wideband silicon RF transistor  

17. Contents  

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

1.1  

1.2  

1.3  

1.4  

General description

 

. . . . . . . . . . . . . . . . . . . . .

 

1  

Features and benefit

s

. . . . . . . . . . . . . . . . . . . .

 

1  

Applications .

 

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Quick reference data

 

. . . . . . . . . . . . . . . . . . . .

 

1  

2

Pinning informatio

n

. . . . . . . . . . . . . . . . . . . . . .

 

2  

Ordering informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

2  

Markin

g

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Design support

 

. . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Recommended operating conditions. . . . . . . .

 

3  

Thermal characteristics

 

. . . . . . . . . . . . . . . . . .

 

4  

Characteristic

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Application information. . . . . . . . . . . . . . . . . .

 

15  

Application example: FM LNA

 

. . . . . . . . . . . .

 

16  

Package outline . . . . . . . . . . . . . . . . . . . . . . . .

 

17  

Handling information. . . . . . . . . . . . . . . . . . . .

 

18  

Abbreviation

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

8  

Revision histor

y

. . . . . . . . . . . . . . . . . . . . . . . .

 

1

8  

3

4

5

6

7

8

9

9.1  

10  

10.1  

11  

12  

13  

14  

15  

Legal information. . . . . . . . . . . . . . . . . . . . . . .

 

19  

Data sheet status . . . . . . . . . . . . . . . . . . . . . .

 

19  

Definition

s

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

9  

Disclaimer

s

. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

9  

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

20  

15.1  

15.2  

15.3  

15.4  

16  

17  

Contact information. . . . . . . . . . . . . . . . . . . . .

 

20  

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

21  

Please be aware that important notices concerning this document and the product(s)  

described herein, have been included in section ‘Legal information’.  

© NXP Semiconductors N.V.

 

2014.  

All rights reserved.  

For sales office addresses, please send an email to: salesaddresses@nxp.com  

Date of release: 28 April 2014  

Document identifier: BFU580Q