Diodes-Incorporated-DXTP5820CFDB-7
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DXTP5820CFDB
-20V PNP LOW SATURATION TRANSISTOR IN U-DFN2020-3
Features
Mechanical Data
BV
CEO
> -20V
Case: U-DFN2020-3 (Type B)
h
FE
Specified up to -6A for High Current Gain Hold Up
Low Profile 0.6mm High Package for Thin Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q10
0
/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part. A
listing can be found at
Nominal Package Height: 0.6mm
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu, Solderable per MIL-STD-202,
e4
Method 208
Weight: 0.01 grams (Approximate)
Applications
DC-DC Converters
Charging Circuits
Motor Control
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Power Switches
U-DFN2020-3 (Type B)
C
B
E
Top View
Bottom View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
DXTP5820CFDB-7
Marking
2E8
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
3,000
7
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
2E8= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
2E8
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
Code
G
H
I
J
K
L
M
N
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CM
Limit
-20
-20
-7
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
Peak Pulse Current
-8
A
Continuous Collector Current
-6
I
C
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.69
1.25
180
100
Unit
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
W
P
D
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
R
JA
-55 to +150
°C
T
J,
T
STG
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
JEDEC Class
3A
C
V
Notes:
5. For a device mounted with the exposed collector on 5mm x 5mm 2oz copper on single sided FR4 PCB; device is measured under still air conditions
whilst operating in the steady state.
6. Same as Note (5) except the exposed collector pad is mounted on 25mm x 25mm 1oz copper.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
Thermal Characteristics and Derating Information
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
V
CE(sat)
25mm x 25mm
1oz Single Sided
FR4-PCB
Limited
1
100m
10m
DC
1s
100ms
10ms
5mm x 5mm
2oz Single Sided
FR4-PCB
1ms
T
T
A
= 25°C
5mm x 5mm
2oz Single Sided
FR4-PCB
100µs
0
25
50
75
100
125
150
100m
1
10
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
180
150
120
90
Single Pulse
T
=25°C
T
A
= 25°C
T
=25°C
T
A
= 25°C
5mm x 5mm
2oz Single Sided
FR4-PCB
100
10
1
5mm x 5mm
2oz Single Sided
FR4-PCB
D=0.5
D=0.2
Single Pulse
60
D=0.05
30
D=0.1
1
0.1
0
100µ
1m
10m 100m
1
10
100
1k
100µ 1m 10m
100m
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Pulse Width (s)
Transient Thermal Impedance
400
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2oz Copper
T =
25°C
A
T
A
= 25°C
350
300
250
200
150
100
50
1oz Copper
1oz Copper
2oz Copper
1k
0
1
10
100
10k
1
10
100
1k
10k
Heatsink Copper Area (sqmm)
Thermal Resistance vs. Copper Area
Heatsink Copper Area (sqmm)
Max Power Dissipation vs. Copper Area
3 of 7
November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Min
-20
-20
-7
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -100µA
—
—
V
I
C
= -10mA
—
—
—
V
I
E
= -100µA
—
-100
-100
-100
nA
nA
nA
V
CB
= -16V
—
Emitter Cutoff Current
—
I
EBO
V
EB
= -6V
—
Collector Emitter Cutoff Current
—
I
CES
V
CES
= -16V
200
200
190
345
320
275
—
—
—
I
C
= -500mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
Static Forward Current Transfer Ratio (Note 8)
—
h
FE
110
155
—
I
C
= -6A, V
CE
= -2V
—
—
—
—
—
—
-25
-50
-40
-80
I
C
= -0.5A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -20mA
I
C
= -3A, I
B
= -30mA
I
C
= -4A, I
B
= -400mA
-80
-130
-210
-325
-230
-135
-215
-150
Collector-Emitter Saturation Voltage (Note 8)
mV
V
CE(sat)
—
—
—
—
—
-235
-0.76
-0.75
-1.03
75
-350
-0.9
-0.9
-1.1
90
I
C
= -6A, I
B
= -300mA
I
C
= -2A, V
CE
= -2V
I
C
= -1A, I
B
= -10mA
Base-Emitter Turn-On Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
V
V
V
BE(on)
V
BE(sat)
I
C
= -6A, I
B
= -300mA
V
CB
= -10V, f = 1MHz
Output Capacitance
Transition Frequency
pF
C
obo
f
T
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
—
140
—
MHz
Delay Time
Rise Time
—
—
—
—
—
—
15
32
—
—
—
—
—
—
t
d
t
r
Turn-On Time
Storage Time
Fall Time
47
t
on
t
s
V
CC
= -9V, I
C
= -2A
I
B1
= -I
B2
= -0.1A
ns
215
47
t
f
Turn-Off Time
262
t
off
Note:
8. Measured under pulse
d conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
4 of 7
November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
100m
10m
1m
1
T
A
=25°C
I
C
/I
B
=20
100°C
25°C
0.1
I
C
/I
B
=100
-55°C
I
C
/I
B
=50
0.01
0.001
I
C
/I
B
=10
100µ
1m
100m
1
10
10
10
100µ
1m
100m
1
10
10
5
-I
C
Co
1
ll
0
e
m
ctor Current (A)
-I
C
Co
1
ll
0
e
m
ctor Current (A)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
1.2
1.0
0.8
0.6
0.4
0.2
700
600
500
400
300
200
100
0
I
C
/I
B
=20
V
CE
=-2V
25°C
-55°C
100°C
25°C
-55°C
100°C
100µ
1m
10m
100m
1
100µ
1m
100m
1
-I
C
Co
1
ll
0
e
m
ctor Current (A)
-I
C
Collector Current (A)
h
FE
v I
C
V
BE(sat)
v I
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
8
T
A
=25°C
V
CE
=-2V
I =
-40mA
B
25°C
-55°C
I
B
= -30mA
6
I
B
= -20mA
4
I
B
= -10mA
2
100°C
0
0
1
2
3
4
100µ
1m
100m
1
-I
C
Co
1
ll
0
e
m
ctor Current (A)
-V
CE
Collector Voltage (V)
I
C
v V
CE
V
BE(on)
v I
C
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November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
Package Outline Dimensions
U-DFN2020-3 (Type B)
U-DFN2020-3
(Type B)
A3
A1
Dim
Min
Max
Typ
A
A
A1
A3
b
0.57
0.00
––
0.63
0.05
––
0.60
0.02
0.152
0.25
Seating Plane
D
0.20
0.30
D
1.950 2.075
2.00
e
e
Z
D2
D4
E
1.22
0.56
1.42
0.76
1.32
0.66
L
1.950 2.075
2.00
E2
E4
e
L
Z
0.79
0.48
––
0.25
––
0.99
0.68
––
0.35
––
0.89
0.58
0.65
0.30
0.225
D4
E
E2
D2
All Dimensions in mm
E4
b
Suggested Pad Layout
U-DFN2020-3 (Type B)
Value
X
Dimensions
(in mm)
1.300
0.240
0.350
1.520
0.500
0.470
1.090
C
G
X
X1
Y
Y1
Y2
Y1
Y2
X1
G
Y
C
6 of 7
November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
DXTP5820CFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without
further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or
use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights,
nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use
and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against
all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
November 2019
© Diodes Incorporated
DXTP5820CFDB
Document number: DS41353 Rev. 3 – 2
