Diodes-Incorporated-DXT651Q-13

DXT651Q  

60V NPN LOW SATURATION POWER TRANSISTOR  

Mechanical Data  

Description  





Case: SOT89  

This Bipolar Junction Transistor (BJT) is designed to meet the  

stringent requirements of automotive applications.  

Case Material: Molded

Plastic. “Green”

Molding Compound.  

UL Flammability Rating 94V-0  





Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin Plated Leads, Solderable per  

MIL-STD-202, Method 208  

Features  





















BV

CEO

> 60V  



Weight: 0.052 grams (Approximate)  

I

C

= 3A

 

High Continuous Collector Current  

I

CM

up to 6A Peak Pulse Current  

2W Power Dissipation  

Applications  

Low Saturation Voltage V

CE(SAT)

< 300mV @ 1A  

Complementary PNP Type: DXT751Q  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note

3)  

Qualified to AEC-Q101 Standards for High Reliability  

PPAP Capable (Note 4)  







Load Management Functions  

Motor Control  

DC-DC / DC-AC Converters  

SOT89  

C

E

C

B

B

C

E

Top View  

Pinout  

Top View  

Device Symbol  

Ordering Information

(Notes 4 and 5)  

Product  

DXT651Q-13  

Compliance  

Automotive  

Marking  

KN2  

Reel Size (inches)  

Tape Width (mm)  

Quantity Per Reel  

13  

12  

2,500  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

rmation about Diodes Incorporated’s definitions of Hal

ogen- and Antimony-free, “Green”  

and Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

5. For packaging details, go to our website a

Marking Information  

SOT89  

KN2 = Product Type Marking Code  

= Manufacturer’s Marking Code  

YWW = Date Code Marking  

Y = Last Digit of Year (ex: 6 = 2016)  

WW = Week Code (01 to 53)  

YWW  

KN2  

1 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

DXT651Q  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

80  

60  

5

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

V

V

3

A

Peak Pulse Collector Current  

Peak Base Current  

6

A

I

CM  

500  

mA  

I

B  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

Unit  

(Note 6)  

(Note 7)  

(Note 6)  

(Note 7)  

(Note 8)  

1

2

125  

62.5  

6.0  

Power Dissipation  

W

P

D  

Thermal Resistance, Junction to Ambient Air  



C/W

  

R

θ

JA  

Thermal Resistance, Junction to Leads  

R

θ

JL  



C/W

  



C  

Operating and Storage Temperature Range  

-55 to +150  

T

J,

T

STG  

Notes:  

6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is  

measured when operating in steady state condition.  

7. Same as note 6, except the device is mounted on 40mm x 40mm x 1.6mm FR-4 PCB.  

8. Thermal resistance from junction to solder-point (on the exposed collector pad).  

Thermal Characteristics and Derating Information  

120  

100  

80  

60  

40  

20  

0

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

D=0.5  

D=0.2  

Single Pulse  

D=0.05  

D=0.1  

0

25  

50  

75  

100 125 150  

1

00μ

1m 10m

 

100m  

100



 

1

10  

100  

1k  

Temperature (

o

C)  

Pulse Width (s)  

Transient Thermal Impedance  

Derating Curve  

100  

10  

1

Single Pulse. T

A

=25

o

C  

100μ

1m 10m

 

100m  

100

  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Power Dissipation  

2 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

DXT651Q  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note 9)  

Emitter-Base Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Conditions  

I

C

= 100µA  

80  

60  

5

V

V

V

BV

CBO  

BV

CEO  

BV

EBO  

  



  

  



  

0.1  

10  

I

C

= 10mA  

I

E

= 100



A  

V

CB

= 60V  

V

CB

= 60V, T

A

= +100°C  

V

EB

= 4V  

Collector-Base Cutoff Current  

µA  

µA  

  



  



I

CBO  

I

EBO  

Emitter-Base Cutoff Current  

0.1  

ON CHARACTERISTICS (Note 9)  

0.08  

0.23  

0.3  

0.6  

V

V

I

C

= 1A, I

B

= 100mA  

I

C

= 3A, I

B

= 300mA  

I

C

= 1A, I

B

= 100mA  

V

CE

= 2V, I

C

= 1A  

Collector-Emitter Saturation Voltage  



V

CE(SAT)  

Base-Emitter Saturation Voltage  

Base-Emitter Turn-On Voltage  

0.85  

0.8  

1.25  

1

V

V





V

BE(SAT)  

V

BE(ON)  

V

CE

= 2V, I

C

= 50mA  

V

CE

= 2V, I

C

= 500mA  

V

CE

= 2V, I

C

= 1A  



300  

  



70  

100  

80  

200  

200  

185  

120  

DC Current Gain  



h

FE  

40  

V

CE

= 2V, I

C

= 2A  

SMALL-SIGNAL CHARACTERISTICS  

Transition Frequency  

140  

200  

MHz  

pF  



30  

f

T  

V

CE

= 5V, I

C

= 100mA, f = 100MHz  

V

CB

= 10V, f = 1MHz  

Output Capacitance  

C

obo  

t

ON  

t

OFF  

  

  

  



35  

230  

  



ns  

ns  

V

CC

= 10V. I

C

= 500mA,  

I

B1

= -I

B2

= 50mA  

Switching Times  

Note:  

9. Measured under pul

sed conditions. Pulse width ≤ 300μs. Duty cycle ≤

2%.  

2.5  

2.0  

500  

450  

V

= 2V  

CE  

I

I

= 10mA  

= 8mA  

B

B

400  

350  

300  

250  

200  

150  

100  

N

I

A

T

= 150°C  

= 85°C  

A

G

T

1.5  

1.0  

N

E

R

R

U

C

T

I

I

= 6mA  

= 4mA  

A

A

B

B

T

= 25°C  

C

D

,

E

h

F  

T

= -55°C  

0.5  

0.0  

A

I

= 2mA  

B

50  

0

0

1

2

3

4

5

0.001  

0.01  

I

C

, COLLECTOR CURRENT (A)  

Figure 2 Typical DC Current Gain vs. Collector Current  

0.1  

1

10  

V

CE

, COLLECTOR EMITTER VOLTAGE (V)  

Figure 1

 

Typical Collector Current vs. Collector-Emitter Voltage  

3 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

DXT651Q  

0.4  

0.3  

1.2  

1.0  

)

V

V

= 2V  

CE  

(

E

G

I /I =

 

20  

A

T

L

C

B

R

E

T

T

)

O

V

(

V

I

E

M

N

G

E

O

0.8  

0.6  

0.4  

A

T

L

–

R

O

T

N

T

= -55°C  

= 25°C  

R

U

T

A

O

V

C

E

0.2  

0.1  

N

R

E

T

T

L

O

L

I

T

O

T

A

A

R

U

T

C

I

M

,

T =

 

150°C  

A

)

T

E

A

T

= 85°C  

A

E

S

A

B

(

S

T =

 

85°C  

A

V

C  

T

= 25°C  

A

T

= 150°C  

0.2  

A

,

)

N

T

= -55°C  

O

A

(

E

V

B  

0.0  

0

0.0001  

0.0001  

0.001  

0.01  

0.1  

1

10  

0.001  

0.01  

0.1  

1

10  

I

C

, COLLECTOR CURRENT (A)  

I

C

, COLLECTOR CURRENT (A)  

Figure 3 Typical Collector-Emitter Saturation Voltage  

vs. Collector Current  

Figure 4 Typical Base-Emitter Turn-On Voltage  

vs. Collector Current  

100  

80  

)

1.2  

1.0  

0.8  

0.6  

V

(

E

G

I /I

 

= 20  

A

T

L

C

B

f = 1MHz  

O

V

N

O

I

T

60  

40  

A

R

U

T

T

= -55°C  

A

A

S

R

E

T

T

T

= 25°C  

= 85°C  

A

0.4  

I

T

M

A

E

E

S

A

B

20  

0

0.2  

0

T

= 150°C  

A

,

)

T

A

S

(

E

0

5

10  

V

R

, REVERSE VOLTAGE (V)  

Figure 6

 

Typical Output Capacitance Characteristics  

15  

20  

25  

30  

0.0001  

0.001  

0.01  

0.1  

1

10  

V

B  

I

C

, COLLECTOR CURRENT (A)  

Figure 5 Typical Base-Emitter Saturation Voltage  

vs. Collector Current  

175  

150  

125  

100  

75  

50  

25  

0

V

= 2V  

CE  

f = 100MHz  

0

20  

40  

60  

80  

100  

I

C

, EMITTER CURRENT (mA)  

Figure 7

 

Typical Gain-Bandwidth Product vs. Emitter Current  

4 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

DXT651Q  

Package Outline Dimensions  

D1  

c

SOT89  

Dim Min Max  

Typ  

1.50

  

0.56  

0.48  

0.38  

4.50  

H

A

B

1.40



1.60  

0.50 0.62  

E

B1

0.42 0.54  

c

D

0.35 0.43  

4.40 4.60  

B1  

L

D1

1.62 1.83

 

1.733  

B

D2

1.61 1.81  

2.40 2.60  

E2

2.05 2.35  

1.71  

2.50  

2.20  

1.50  

4.10  

2.78  

1.05  

E

e

D2  

e

–

–

H

3.95 4.25  

H1

2.63 2.93  

0.90 1.20  

8

°

(

4X)  

L

L1

0.327 0.527

 

0.427  

0.20 0.40

 

0.30  

All Dimensions in mm  

H1  

E2  

z

A

L1  

D

z

Suggested Pad Layout  

X2  

Value  

(in mm)  

1.500  

0.244  

0.580  

0.760  

1.933  

1.730  

3.030  

1.500  

0.770  

4.530  

Dimensions  

C

G

X

X1  

X2  

Y

Y1  

Y2  

Y3  

Y4  

Y3  

Y1  

Y4  

X

G

Y

Y2  

C

X1  

5 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

DXT651Q  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others.

 

Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending.

 

Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference.

 

Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated.

 

Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2016, Diodes Incorporated  

6 of 6  

July 2016  

© Diodes Incorporated  

DXT651Q  

Document Number: DS38910 Rev: 1 – 2  

Mouser Electronics  

Authorized Distributor  

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