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April 2013
FJPF2145
ESBC
™
Rated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
Description
(1)
The FJPF2145 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC
™
configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1100 volts and up to 5 amps, while providing exception-
ally low on-resistance and very low switching losses.
V
CS(ON)
I
C
Equiv. R
CS(ON)
0.21 V
2 A
0.105
Ω
• Low
Equivalent On Resistance
• Very
Fast Switch: 150 kHz
• Wide
RBSOA: Up to 1100 V
• Avalanche
Rated
The ESBC
™
switch can be driven using off-the-shelf
power supply controllers or drivers. The ESBC
™
MOS-
FET is a low-voltage, low-cost, surface-mount device that
combines low-input capacitance and fast switching. The
ESBC
™
configuration further minimizes the required driv-
ing power because it does not have Miller capacitance.
• Low
Driving Capacitance, no Miller Capacitance
• Low
Switching Losses
• Reliable
HV Switch: No False Triggering due to
High dv/dt Transients
Applications
The FJPF2145 provides exceptional reliability and a large
operating range due to its square reverse-bias-safe-oper-
ating-area (RBSOA) and rugged design. The device is
avalanche rated and has no parasitic transistors, so is not
prone to static dv/dt failures.
• High-Voltage,
High-Speed Power Switches
• Emitter-Switched
Bipolar/MOSFET Cascode
(ESBC
™
)
• Smart
Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-220F package.
• Motor
Drivers and Ignition Drivers
C
2
C
FJPF2145
FDC655
B
1
B
G
TO-220F
1
3
E
1.Base 2.Collector 3.Emitter
S
Figure 1. Pin Configuration
Figure 2. Internal Schematic Diagram
Figure 3. ESBC Configuration
(2)
Ordering Information
Part Number
FJPF2145TU
Marking
J2145
Package
TO-220F
Packing Method
TUBE
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFE
T
s
c
an be used in this ESBC application.
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
1
Absolute Maximum Ratings
(3)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted..
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
1100
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current
800
V
7
V
5
1.5
A
I
B
A
P
C
Collector Dissipation (T
C
= 25°C)
Operating and Junction
T
e
mperature Range
Storage
T
e
mperature Range
40
W
T
J
-55 to +125
-55 to +150
15
°
C
°
C
mJ
T
STG
EAR
(4)
Avalanche Energy (T
J
= 25
°
C, 1.2 mH)
Notes:
3. Pulse test is pulse width
≤
5 ms, duty cycle
≤
10%.
4. Lab characterization data only for reference.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
R
θ
jc
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
3.125
70.44
Units
°
C/W
°
C/W
R
θ
ja
Electrical Characteristics
(5)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Collector-Base Breakdown Volt-
age
Test Condition
I
C
= 1 mA, I
E
= 0
Min. Typ. Max. Units
BV
CBO
1100
V
Collector-Emitter Breakdown
Voltage
BV
CEO
I
C
= 5 mA, I
B
= 0
800
7
V
BV
EBO
I
CBO
I
EBO
Emitter-Base Breakdown Voltage
I
E
= 1 mA, I
C
= 0
V
Collector Cut-off Current
Emitter Cut-off Current
V
CB
= 800 V, I
E
= 0
10
10
40
μ
A
μ
A
V
EB
= 5 V, I
C
= 0
h
FE1
h
FE2
V
CE
= 5
V
,
I
C
= 0.2 A
V
CE
= 5
V
,
I
C
= 1 A
20
8
DC Current Gain
I
C
= 0.25 A, I
B
= 0.05 A
I
C
= 0.5 A, I
B
= 0.167 A
I
C
= 1 A, I
B
= 0.33 A
I
C
= 1.5 A, I
B
= 0.3 A
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 0.3 A
I
C
= 2 A, I
B
= 0.4 A
0.051
0.055
0.085
V
V
Collector-Emitter Saturation Volt-
age
V
CE
(sat)
V
0.159 2.000
0.756
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
0.840 1.500
0.863
V
V
C
IB
C
OB
f
T
Input Capacitance
V
EB
= 5 V, I
C
= 0, f = 1 MHz
V
CB
= 200
V
,
I
E
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 0.2 A
1.618
pF
pF
MHz
Output Capacitance
11.39
Current Gain Bandwidth Product
15
Note:
5. Pulse test is pulse width
≤
5 ms, duty cycle
≤
10%.
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
2
ESBC-Configured Electrical Characteristics
(6)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Current Gain Bandwidth
Product
Test Condition
I
C
= 0.1 A, V
CE
= 10 V
Min. Typ. Max.
Units
f
T
28.40
MHz
Inductive Current Fall
Time
It
f
t
s
95
ns
ns
ns
Inductive Storage Time
0.13
135
V
CC
= 100
V
,
V
GS
= 10 V, R
G
= 4 7
Ω
,
V
Clamp
= 500 V, I
C
= 0.5 A,
I
B
= 0.05 A, H
FE
= 10, L
C
= 166
μ
H,
SRF = 684 kHz
Inductive Voltage Fall
Time
Vt
f
Inductive Voltage Rise
Time
Vt
r
t
c
80
115
50
ns
ns
ns
ns
ns
Inductive Crossover Time
Inductive Current Fall
Time
It
f
t
s
Inductive Storage Time
0.34
150
V
CC
= 100
V
,
V
GS
= 10 V, R
G
= 47
Ω
,
V
Clamp
= 500
V
,
I
C
= 1 A,
I
B
= 0.2 A, H
FE
= 5, L
C
= 166
μ
H,
SRF = 684 kHz
Inductive Voltage Fall
Time
Vt
f
Inductive Voltage Rise
Time
Vt
r
t
c
60
95
ns
ns
Inductive Crossover Time
Maximum Collector-
Source Voltage at
Turn-off without Snubber
h
FE
= 5, I
C
= 2 A
V
GS
= ±20 V
V
CSW
1100
V
Gate-Source Leakage
Current
I
GS(OS)
1
nA
V
GS
= 10 V, I
C
=2 A, I
B
= 0.67 A, h
FE
= 3
V
GS
= 10 V, I
C
= 1 A, I
B
= 0.33 A, h
FE
= 3
0.209
0.114
0.068
0.062
1.9
V
V
V
V
V
Collector-Source On
Voltage
V
CS(ON)
V
GS
= 10 V, I
C
= 0.5 A,I
B
= 0.17 A, h
FE
= 3
V
GS
= 10
V
, I
C
= 0.3 A, I
B
= 0.06 A, h
FE
= 5
V
BS
= V
GS,
I
B
= 250
μ
A
V
GS(th)
C
iss
Gate Threshold Voltage
Input Capacitance
(V
GS
= V
CB
= 0)
V
CS
= 25 V, f = 1 MHz
470
9
pF
nC
Gate-Source Change
V
CB
= 0
V
GS
= 10 V, I
C
= 6.3 A, V
CS
= 25 V
Q
GS(tot)
V
GS
= 10 V, I
D
= 6.3 A
21
26
30
m
Ω
m
Ω
m
Ω
Static Drain-to-Source
On Resistance
V
GS
= 4.5
V
, I
D
= 5.5 A
R
DS(ON)
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C
Note:
6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFE
T
s
a
re
used.
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
3
Typical Performance Characteristics
100
10
1
5
V
C
E
= 5 V
4
3
2
1
0
I
B
= 1 A
I
= 0.9 A
I
B
= 0.8 A
I
B
B
= 0.7 A
I
= 0.6 A
I
B
B
= 0.5 A
I
B
= 0.4 A
I
B
= 0.3 A
I
B
= 0.2 A
I
B
= 0.1 A
125
o
C
25
o
C
-25
o
C
-40
o
C
0
1
2
3
4
5
6
7
1E-3
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 4. Static Characteristics
Figure 5. DC Current Gain
10
10
HFE = 5
HFE = 3
1
1
0.1
0.1
125
o
25
o
C
o
o
125
C
C
25
– 25
– 40
C
C
C
-25
o
-40
o
C
C
o
o
0.01
1E-3
0.01
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
h
FE
= 3
Figure 7. Collector-Emitter Saturation Voltage
h
FE
= 5
10
10
HFE = 20
HFE = 10
1
1
0.1
0.1
125
o
25
o
-25
o
-40
o
C
C
C
C
125
o
C
25
o
C
0.01
1E-3
0.01
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
h
FE
= 10
Figure 9. Collector-Emitter Saturation Voltage
h
FE
= 20
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
4
Typical Performance Characteristics
(Continued)
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
C
= 0.4 A
0.4
I
C
= 1 A
I
C
= 2 A
0.2
I
C
= 3 A
0.0
0.01
1
0.1
1
1
10
100
1000
I
B
[mA], BASE CURRENT
COLLECTOR-BASE VOLTAGE[V]
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
150
H
FE
=5, 10, T
J
= 25
o
C, L=166 uH, SRF=684 KHz
H
FE
= 5, 10, T
J
= 25
o
C, L=166 uH SRF = 684 KHz, 2I
B
1=I
B
2, No peaking
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
125
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
100
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
tf hfe = 10 ESBC
75
50
25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 12. Inductive Load Collector Current
Fall – Time (t
f
)
Figure 13. Inductive Load Collector Current
Storage – Time (t
stg
)
180
H
FE
=5, 10, T
J
= 25
o
C, L=166 uH, SRF=684 KHz
H
FE
=5, 10, T
J
= 25
o
C, L=166 uH, SRF=684 KHz
500
450
400
350
300
250
200
150
100
50
160
140
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
120
0.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 14. Inductive Load Collector Voltage
Fall – Time (t
f
)
Figure 15. Inductive Load Collector Voltage
Rise – Time (t
r
)
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
5
Typical Performance Characteristics
(Continued)
7
6
5
4
3
2
1
H
FE
=5, 10, T
J
= 25
o
C, L=166 uH, SRF=684 KHz
600
V
DD
= +/- 50 V, R
LOAD
= OPEN, H
FE
=4
550
500
450
tf hfe = 5 Common Emitter
tf hfe = 10 Common Emitter
tf hfe = 5 ESBC
tf hfe = 10 ESBC
400
350
300
250
200
150
100
50
600 700 800 900
1000 1100 1200 1300 1400 1500 1600 1700
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 16. Inductive Load Collector Current / Voltage
Crossover (t
c
)
Figure 17. BJT RBSOA
7
T
C
= 25
o
C
V
DD
= +/-50 V, R
LOAD
= Open, H
FE
= 4
Single 80
μ
s Pulse
6
5
4
3
2
1
10
1
0
0.1
600 700 800 900
1000 1100 1200 1300 1400 1500 1600 1700
0
500
1000
1500
2000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover FBSOA
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 20. Power Derating
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
6
Test Circuits
ꢀ
ꢀ
ꢀ
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
A
p
j
p
i
A
p
j
k|{
A
k|{
RG}
ꢀ
ꢀ
ꢀ
ꢀ
Figure 22. Energy Rating Test Circuit
Figure 24. FBSOA
Figure 23. f
T
Measurement
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
7
Test Circuits
(Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
t
off
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
8
Functional Test Waveforms
(Continued)
Figure 29. Storage Time – ESBC FET Gate (off) to I
C
Fall – time
Figure 28. Storage Time – Common Emitter Base
Turn Off (Ib2) to I
C
Fall – time
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
9
Very Wide Input Voltage Range Supply
24V@3.3A
`
X
Y
tiyYWXWj{{|
XWWWm
Z}
XWWWm
Z}
X
1
WWTXWWW}Gkj
30Watts
X
xGyGXYWro¡
^
[
Y
Y
Z
|m[WW^
100k
Ω
Z
w]rl[[Wh
twX]W_i[^Xh
680
μ
F
[W}
YY}
YL
100k
Ω
FJPF2145
Xu[X[_
100k
Ω
oXXhnX}t
]
Q
680
μ
F
[W}
}
kj]\
v|{
jz
o}
_
100
k
Ω
ttzkZW^W
XYTX[}
Z
[
XWm
mi
kl{
X
XY}¡
100k
Ω
Y
[}
680
μ
F
[W}
Xu[X[_~z
XWWm
Y}
100k
Ω
2.5A limit
QGtGGG
Figure 30. 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Driving ESBC Switches
Figure 32. V
bias
Supply Derived
Figure 33. Proportional Drive
Figure 31. V
CC
Derived
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
10
Physical Dimensions
TO-220F
2.74
2.34
10.36
9.96
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
3
1
2.96
2.56
1.47 MAX
2.14
0.90
0.70
M
10.05
9.45
0.50
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
4.90
4.50
B
F. DRAWING FILE NAME: TO220M03REV1
Figure 34. TO-220, MOLDED, 3-LEAD, FULL PACK EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
© 2013 Fairchild Semiconductor Corporation
FJPF2145 Rev. 1.0.0
11
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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2Cool
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max
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¥
TinyLogic
®
TINYOPTO
¥
TinyPower
¥
TinyPWM
¥
TinyWire
¥
TranSiC
¥
QS
¥
Quiet Series
¥
RapidConfigure
¥
¥
GTO
¥
IntelliMAX
¥
Current Transfer Logic
¥
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficientMax
¥
ISOPLANAR
¥
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWise
¥
SmartMax
¥
TriFault Detect
¥
TRUECURRENT
®
*
P
SerDes
¥
MegaBuck
¥
SMART START
¥
Solutions for Your Success
¥
SPM
®
ESBC
¥
MICROCOUPLER
¥
MicroFET
¥
®
MicroPak
¥
Fairchild
®
STEALTH
¥
UHC
®
Ultra FRFET
¥
UniFET
¥
VCX
¥
VisualMax
¥
VoltagePlus
¥
XS™
MicroPak2
¥
Fairchild Semiconductor
®
FACT Quiet Series
¥
FACT
®
SuperFET
®
MillerDrive
¥
SuperSOT
¥
-3
MotionMax
¥
SuperSOT
¥
-6
mWSaver
¥
FAST
®
SuperSOT
¥
-8
OptoHiT
¥
SupreMOS
®
FastvCore
¥
OPTOLOGIC
®
OPTOPLANAR
®
FETBench
¥
SyncFET
¥
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Rev. I64
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