TWGMC-TW1754Sl-X
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TW1754SI-X
N-Channel Enhancement Mode Power MOSFET
Features
General Description
V
DS
= 30V,
•
load switch
I
D
= 4.3A
•
PWM applications
R
DS(ON)
@V
GS
= 10V, TYP 28
mΩ
R
DS(ON)
@V
GS
= 4.5V, TYP 32
mΩ
R
DS(ON)
@V
GS
= 2.5V, TYP 47
mΩ
Pin Configurations
SOT23
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter Symbol
Ratings
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GSS
±
12
4.3
V
T
A
=25°C
T
A
=70°C
Drain Current (Continuous) *AC
I
D
A
3.5
Drain Current (Pulse)
*B
Power Dissipation
I
DM
P
D
17
A
T
A
=25°C
1.25
-55~150
W
℃
Operating Temperature/ Storage Temperature
T
J
/T
STG
Thermal Resistance Ratings
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Ambient
Steady State
100
R
thJA
°C/W
1
TW1754SI-X
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
=
250μA
V
DS
= 30 V, V
GS
= 0V
V
GS
= V
DS
, I
DS
=
250μA
V
GS
=
12V
, V
DS
=0V
V
GS
= 10V, I
D
= 5A
30
—
—
—
—
1
V
μA
V
0.5
—
—
1.5
100
36
Gate Leakage Current
—
nA
mΩ
mΩ
mΩ
V
—
28
32
47
—
R
DS(on)
R
DS(on)
R
DS(on)
V
SD
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4A
—
42
61
1
Drain-Source On-state Resistance
—
Diode Forward Voltage
Diode Forward Current
Switching
I
SD
= 1A ,
V
GS
=0V
T
A
=25°C
—
I
S
—
—
4.9
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
9
1
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
DS
= 15V, I
D
= 4.8A,
V
GS
= 4.5V
2
10
3
V
DD
= 15V, I
D
= 4.8A
V
GS
= 10V, R
GEN
= 3
t
d( off )
40
2
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
—
—
735
90
—
—
—
pF
pF
pF
V
DS
= 15V, V
GS
= 0V,f = 1.0 MHz
65
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to ambient thermal resistance ra
ting.
2
TW1754SI-X
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
3
