LRC-LN4404T1G
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LN4404T1G
SO-8
N-Channel 30-V (D-S) MOSFET
1. FEATURES
●
Low RDS(on) trench technology
●
Low thermal impedance
●
Fast switching speed
2. APPLICATIONS
●
DC/DC Conversion
●
Power Routing
●
Motor Drives
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LN4404T1G
4404
4000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
Limits
30
Unit
V
Drain–Source Voltage
Gate-Source Voltage
VDSS
VGS
IAS
±20
V
Avalanche Current
17
A
Avalanche energy L=0.1mH
EAS
14.5
16
mJ
TA =25
℃
TA =70
℃
Continuous Drain Current(Note 1)
ID
A
13.2
60
A
A
Pulsed Drain Current(Note 2)
IDM
IS
Continuous Source Current(Diode Conduction)(Note
4.1
TA =25
℃
3.1
Power Dissipation(Note 1)
PD
W
TA =70
℃
2.2
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
1. Surface Mounted on 1” x 1” FR4 Board.
-55~+150
2.Pulse width limited by maximum junction temperature
5. THERMAL CHARACTERISTICS
Parameter
Symbol
RΘJA
Limits
40
Unit
ºC/W
ºC/W
Thermal Resistance,
t
≤
10 sec
Junction–to–Ambient(Note 1)
Steady State
80
Leshan Radio Company, LTD.
Rev.C Jun.
2019
1/5
LN4404T1G
N-Channel 30-V (D-S) MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
STATIC
Gate-Source Threshold Voltage
(VDS =VGS , ID =250μA)
VGS(th)
IGSS
V
1
–
–
–
–
Gate-Body Leakage Current
(VDS =0V, VGS =±20V)
nA
±100
Zero Gate Voltage Drain Current
(VDS = 24 V, VGS = 0 V)
IDSS
ID(on)
µA
A
–
–
–
–
1
(VDS = 24 V, VGS = 0 V,TJ = 55°C)
On-State Drain Current(Note 3)
(VDS = 5 V, VGS = 10 V)
10
25
Drain-Source On-Resistance(Note 3)
(VGS = 10 V, ID = 12.5 A)
(VGS = 4.5 V, ID = 10 A)
RDS(ON)
mΩ
–
–
–
–
10
16.5
Forward Transconductance(Note 3)
(VDS = 15 V, ID = 12.5 A)
Diode Forward Voltage(Note 3)
(IS = 2.05 A, VGS = 0 V)
gfs
S
V
–
–
9
–
–
VSD
0.77
DYNAMIC(Note 4)
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
–
–
–
–
–
–
–
–
–
–
10
4.1
4.3
1399
159
117
7
–
–
–
–
–
–
–
–
–
–
Total Gate Charge
(VDS = 15 V,
VGS = 4.5 V,ID
= 12.5 A)
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
(VDS = 15 V,
VGS = 0 V, f =
1 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
(VDS=15V,RL=
1.2
Ω,ID=12.5A,VG
EN=10V,RG=6
Ω)
6
ns
td(off)
tf
29
9
3.Pulse test; pulse width
≤
300us, duty cycle
≤
2%
4.Guaranteed by design, not subject to production testing.
Leshan Radio Company, LTD.
Rev.C Jun.
2019
2/5
LN4404T1G
N-Channel 30-V (D-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
14
12
10
8
12
VGS=4.0V
VDS=10V
VGS=3.0V
10
8
VGS=2.8V
25
℃
6
VGS=2.6V
6
4
-55
℃
150
℃
4
VGS=2.4V
VGS=2.2V
2
2
0
0
0
1
2
3
4
0
1
2
3
VDS(V)
VGS(V)
ID vs. VDS
ID vs. VGS
0.02
0.015
0.01
0.005
0
100
10
VGS=4.5V
VGS=10V
25
℃
150
℃
1
-55
℃
0.1
0.01
0.2
0.4
0.6
0.8
1
3
6
9
ID(A)
12
15
VSD(V)
RDS(on) vs. ID
IS vs. VSD
Leshan Radio Company, LTD.
Rev.C Jun.
2019
3/5
LN4404T1G
N-Channel 30-V (D-S) MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.025
0.02
0.015
0.01
0.005
0
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
ID=12.5A
VGS=4.5V,ID=10A
25
℃
VGS=10V,ID=12.5A
150
℃
-55
℃
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150
VGS(V)
Tj(
℃
)
RDS(on) vs Tj
RDS(on) vs. VGS
1800
1600
1400
1200
1000
800
600
400
200
0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
f=1.0MHz
ID=250uA
Ta=25
℃
Ciss
Coss
Crss
-50 -25
0
25 50 75
100 125 150
0
10
20
30
Tj(
℃
)
VDS(V)
Capacitance
VGSTH vs. Tj
Leshan Radio Company, LTD.
Rev.C Jun.
2019
4/5
LN4404T1G
N-Channel 30-V (D-S) MOSFET
8.OUTLINE AND DIMENSIONS
Note:
1. All
Dimension Are In mm.
2. Package
Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall
Not Exceed 0.10 mm Per Side.
3. Package
Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold
Flash, Tie
Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The
Plastic Body.
4. The
Package Top May Be Smaller Than The Package Bottom.
5. Dimension
“B” Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In
Excess Of “B” Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius
Of The
Foot.
Leshan Radio Company, LTD.
Rev.C Jun.
2019
5/5
