JSMSEMI-JSM7410
| Part # | JSMSEMI-JSM7410 |
Download  | JSMSEMI-JSM7410 |
JSM7410
N-Channel
Enhancement Mode Power MOSFET
30V N-Channel MOSFET
DFN 3x3_EP
PRODUCT SUMMARY
Top View
Bottom View
V
DS
(V) = 30V
I
D
=24A
R
(V
GS
= 10V)
(V
GS
= 4.5V)
DS(ON)
< 20m
Ω
R
DS(ON)
< 26m
Ω
Pin 1
100% UIS Tested
100% R
g
Tested
Equivalent
Top View
• Trench Power αMOS Technology
• Low R
DS(ON)
• Low Gate Charge
D
D
D
D
D
• High Current Capability
• RoHS and Halogen-Free Compliant
7410
TFCYWP
G
Applications
S
S
S S G
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Y :year code
W :week code
Package Marking and Ordering Information
Device Marking
Device
Device Packag
Reel Size
Ø330mm
Tape width
Quantity
7410
7410
PDFN3x3-8
12mm
4000 units
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Curren
C
Continuous Drain
Current
A
V
GS
±20
V
24
50
I
D
T
C
=25
°
C
T
A
=25
°
C
A
I
DM
9.5
I
DSM
Avalanche C
rrent
C
Repetitive avalanche energy L=0.1mH
C
I
AS
, I
AR
17
14
A
E
AS
, E
AR
mJ
T
C
=25
°
C
20
P
D
Power Dissipation
B
W
°C
3.1
P
DSM
T
A
=25
°
C
Power Dissipation
A
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
60
5
Max
40
75
6
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Case
B
R
θ
JC
第1/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
I
DSS
Zero Gate Voltage Drain Current
µ
A
V
DS
=30V, V
GS
=0V
1
V
V
V
DS
=0V, V
GS
= ±20V
DS
=V
GS
I
D
=250
µ
A
GS
=10V, V
DS
=5V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±1
0
.5
nA
V
V
GS(th)
I
D(ON)
1.4
50
1.8
16
A
V
GS
=10V, I
D
=8A
20
26
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
V
V
GS
=4.5V, I
D
=7A
DS
=5V, I
D
=8A
21
30
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
I
S
=1A,V
GS
=0V
0.75
1
Maximum Body-Diode Continuous Current
20
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
440
77
33
3
550
110
55
660
143
77
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
V
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
4
4.9
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
7.8
3.6
1.4
1.3
9.8
4.6
1.8
2.2
5
12
5.5
2.2
3
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=8A
Q
gs
Q
gd
t
t
r
Gate Source Charge
Gate Drain Charge
Turn-On Delay
Turn-On Rise Time
Turn-Of
DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=2
Ω
,
R
GEN
=3
Ω
3.2
24
6
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=8A, dI/dt=500A/
µ
s
I
F
=8A, dI/dt=500A/
µ
s
7
9
11
18
Body D
ode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
12
15
nC
A: The value of
R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on
R
θ
JA
t
≤
10s value and the maximum allowed junction temperature of 150
°
C. The value in any given
application depends on the user’s specific board design, and the maximum temperature of 150
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The SOA
curve provides a single pulse rating.
第2/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
V
DS
= 5V
10V
4.5V
4V
3.5V
125
°
C
V
GS
= 3V
25
°
C
0
1
2
3
4
5
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Figure 2:
ransfer Characteristics
Figure 1: On-Region Characteristics
26
24
22
20
18
16
4
1.8
1.6
1.4
1.2
1.0
0
.
8
V
GS
= 10V
I
D
= 8A
V
GS
= 4.5V
V
GS
= 4.5V
I
D
= 7A
V
GS
= 10V
0
5
1
0
1
5
2
0
2
5
3
0
0
2
5
5
0
7
5
1
0
0
1
2
5
1
5
0
1
7
5
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistan
Drain Current and
Gate V
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
50
I
D
= 8A
45
40
35
30
25
20
15
10
125
°
C
25
°
C
125
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
第3/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
10
8
V
DS
= 15V
I
D
= 8A
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
V
S
(Volts)
Q
g
(nC)
Figure 8: Capaci
ance Characteristics
Figure 7: Gate-Charge Characteristics
300
100
10
1
T
J(Max)
=150
°
C
T
C
=25
°
C
10
µ
s
100
µ
s
200
100
1ms
DC
R
DS(ON)
limited
0.1
T
J(Max)
=150
°
C
T
T
A
=
=
2
2
5
5
°
°
C
C
0
0.01
0.00001 0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating
Note H)
10
D=T
n
/T
In descending order
T
K
=T
C
+P
M
.Z
θ
JC
.R
θ
JC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=6
°
C/W
1
0.1
0.01
P
D
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
第4/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
20
10
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
T
CASE
(
°
C)
Figure 13: Current De-rating
Note F)
1000
T
A
=25
°
C
100
10
1
0.0001 0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pu
se Power Rating Junction-to-
Ambient (Note H)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
A
R
θ
JA
=75
°
C/W
1
0.1
0.01
0.001
Single Pulse
0.
0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)
第5/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
rge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
d(off)
t
f
t
o
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
BV
DSS
Vds
Id
Vds
+
Vgs
I
AR
Vdd
Vgs
VDC
Id
Rg
–
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
第6/7页
JSM7410
N-Channel
Enhancement Mode Power MOSFET
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
0.650
0.850
0.026
0.033
0.152 REF.
0~0.05
0.006 REF.
0~0.002
2.900
2.300
2.900
3.150
1.535
0.200
0.550
0.300
0.180
3.100
2.600
3.100
3.450
1.935
0.400
0.750
0.500
0.480
0.114
0.091
0.114
0.124
0.060
0.008
0.
22
0.012
0.007
0
0
0.122
0.136
0.076
0.016
0.030
0.020
0.019
0~0.100
0~0.100
0~0.004
0~0.004
0.315
9°
0.515
13°
0.012
9°
0.020
13°
θ
第7/7页
