JSMSEMI-JSM3622
| Part # | JSMSEMI-JSM3622 |
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JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
Description
D1
D2
The
JSM
3622 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
G1
G2
S1
S2
Schematic diagram
General Feature
●
V
DS
=30
V
,
I
D
=25A
R
DS(ON) Typ
=12
m
Ω
@ V
GS
=10V
=16
m
Ω
@ V
GS
=4.5V
R
DS(ON)
Typ
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Application
●
Battery switch
●
DC/DC converter
PDFN3333-8 top
view
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
V
Drain-Source Voltage
V
DS
Gate-Source Voltage
±20
V
V
GS
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
25
A
I
D
75
A
I
DM
Maximum Power Diss
ation
3.5
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
35
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
30
–
–
–
–
V
V
DS
=30V,V
GS
=0V
1
μ
A
1/6
JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
Parameter
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Symbol
Condition
Min Typ
Max
Unit
I
GSS
V
GS
=±20V,V
DS
=0V
–
–
±100
nA
V
GS(th)
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=15A
V
GS
=4.5V, I
D
=10A
1.0
1.6
12
16
2.4
14
18
V
m
Ω
m
Ω
Drain-Source On-State Resistance
R
DS(ON)
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
564
75
–
–
–
PF
PF
PF
V
DS
=15V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
66
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
9
10
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=30V,I
D
=1.5
V
GS
=10V,R
GEN
=1
Ω
Turn-Off Delay Time
15
Turn-Off Fall Time
5
Total Gate Charge
Q
g
Q
gs
Q
gd
14.2
1.5
3.6
V
DS
=30V,I
D
=15A,
Gate-Source Charge
V
GS
=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
S
I
S
V
GS
=0V,I
S
=15A
V
A
1.2
25
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
1
sec.
3.
Pulse Test: Pulse Width
≤
3
0
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, n
t subject to production
2/6
JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1 Switching Test Circuit
Figure 2 Switching Waveforms
T
J
-Junction
T
e
mper
ure
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power D
ssipation
Figure 4 Drain Current
18
17
16
15
12
11
10
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
3/6
JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
15A
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 D
n-Source On-Resistance
15A
Vgs Gate-Sourc
oltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
4/6
JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 1
ormalized Maximum Transient Thermal Impedance
5/6
JSM3622
N-
C
HANNEL ENHANCEMENT MODE POWER MOSFET
PDFN3333
Land
P
a
t
t
e
r n
O
n
l
y
f
o
r
Ref er
e
nce
6/6
