YFW-MMBT4401
| Part # | YFW-MMBT4401 |
Download  | YFW-MMBT4401 |
MMBT4401
SOT-23
■
NPN Transistors
■
Features
3
●
●
Ideal for Medium Power Amplification and Switching
Complementary PNP Type Available (MMBT4403)
2
1.Base
2.Emitter
3.Collector
1
■
Simplified outline(SOT-23)
■
Marking
Marking
2X
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Collector-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
Unit
V
Collector-emitter voltage
40
V
Emitter-base voltage
6.0
V
Collector current
600
mA
mW
℃
/W
℃
Total Device Dissipation Alumina Substrate
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
P
D
300
R
θJA
T
J
, T
stg
417
-55 to150
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test conditions
Min
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
= 100μA,
I
E
= 0
60
40
V
(BR)CEO
I
C
= 1.0 mA, I
B
= 0
V
V
(BR)EBO
I
E
=100μA,
I
C
= 0
6.0
V
I
CBO
I
EBO
V
CB
=50 V, I
E
=0
V
EB
=5V, I
C
=0
0.1
0.1
μA
μA
Emitter cut-off current
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 2.0 V
20
40
80
100
40
DC current gain
*
h
FE
300
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 20 mA, V
CE
= 10 V, f = 100 MHz
V
CC
= 30 V, V
EB
= 2.0 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
0.4
0.75
0.95
1.2
Collector-emitter saturation voltage
Base-emitter saturation voltage
*
*
V
CE(
sat)
V
BE(
sat)
V
V
0.75
250
Transition frequency
Delay time
f
T
t
d
t
r
MHz
ns
15
20
Rise time
ns
Storage time
Fall time
t
s
t
f
225
30
ns
ns
* Pulse
test: pulse width
≤
300 μs
, duty cycle
≤
2.0%.
Dongguan YFW Electronics Co, Ltd.
1 / 3
MMBT4401
SOT-23
■
Typical Characterisitics
Static Characteristic
h
FE
——
I
C
250
200
150
100
50
1000
COMMON
EMITTER
T =25
℃
a
COMMON EMITTER
V
CE
= 1V
1mA
T
a
=100
℃
0.9mA
0.8mA
a
T =25
℃
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
0
10
600
0
1
2
3
4
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
1000
800
600
400
200
0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
100
T =100
℃
a
T
a
=25
℃
10
0.5
600
0.1
1
10
100
0.1
1
10
100
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
500
600
COMMON EMITTER
V
CE
=1V
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
100
10
1
100
0.1
10
0
200
400
600
800
1000
1200
10
20
30
40
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
400
300
200
100
0
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0.1
0
25
50
75
100
T
125
150
1
10
30
AMBIENT TEMPERATURE
℃
Dongguan YFW Electronics Co, Ltd.
2 / 3
MMBT4401
SOT-23
SOT-23
Package Outline
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w
M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
Summary of Packing Options
Package
SOT-23
Packing Description
Tape/Reel,7”reel
Packing Quantity
3000
Industry Standard
EIA-481-1
Dongguan YFW Electronics Co, Ltd.
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