MSKSEMI-MS50N06

MS50N06  

Semiconductor  

Compiance  

Schematic diagram  

FEATURE  











High density cell design for ultra low R

dson  

Fully characterized avalanche voltage and current  

Good stability and uniformity with high E

AS  

Excellent package for good heat dissipation  

Special process technology for high ESD capability  

APPLICATION  







Power switching application  

Hard switched and high frequency circuits  

Uninterruptible power supply  

TO-252  

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

60  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

V

A

±20  

Continuous Drain Current  

Pulsed Drain Current  

50  

I

DM  

E

AS  

P

D  

220  

Single Pulsed Avalanche Energy*  

Power Dissipation  

115  

mJ  

W

1.25  

Thermal Resistance from Junction to Ambient  

Junction Temperature  

R

θJA  

T

J  

100  

℃

/W  

150  

℃

Storage Temperature  

T

stg  

-50 ~+150  

*E

AS

condition: T

j

=25

℃

,V

DD

=50V,L=0.5mH, R

G

=25Ω, Starting T

J

= 25°C  

MS50N06  

Semiconductor  

Compiance  

Electrical characteristics (T

a

=25

℃

unless otherwise noted)  

Parameter  

Off characteristics  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

On characteristics (note1)  

Gate-threshold voltage  

V

(BR) DSS  

I

DSS  

V

GS

= 0V, I

D

=250µA  

V

DS

=60V, V

GS

=0V  

V

DS

=0V, V

GS

=±20V  

60  

V

1

µA  

nA  

±100  

I

GSS  

V

GS(th)  

R

DS(on)  

g

FS  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10V, I

D

=20A  

V

DS

=25V, I

D

=20A  

1.5  

24  

2.5  

15  

V

mΩ  

S

11.5  

Static drain-source on-resistance  

Forward transconductance  

Dynamic characteristics (note 2)  

Input capacitance  

C

iss  

C

oss  

C

rss  

900  

104  

33  

V

DS

=25V,V

GS

=0V,  

f =1MHz  

Output capacitance  

pF  

Reverse transfer capacitance  

Switching characteristics (note 2)  

Total gate charge  

Q

g  

Q

gs  

Q

gd  

30  

10  

5

V

DS

=30V, V

GS

=10V,  

I

D

=50A  

Gate-source charge  

nC  

ns  

Gate-drain charge  

Turn-on delay time  

t

d  

25  

5

(on)  

V

DD

=30V,I

D

=2A,  

V

GS

=10V,R

G

=2.5Ω,  

R

L

=15Ω  

Turn-on rise time  

t

r  

t

d(off)  

t

f  

Turn-off delay time  

50  

6

Turn-off fall time  

Drain-Source Diode Characteristics  

Drain-source diode forward voltage(note1)  

Continuous drain-source diode forward  

current  

V

SD  

I

S  

V

GS

=0V, I

S

=40A  

1.2  

50  

V

A

A

Pulsed drain-source diode forward current  

Notes:  

I

SM  

220  

1.  

2.  

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.  

Guaranteed by design, not subject t

o

p

roduction.  

MS50N06  

Semiconductor  

Compiance  

PACKAGE MECHANICAL DATA  

D

A

D1  

c

h

φ

A1  

D2  

b

e

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

2.200  

0.000  

0.635  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.770  

0.580  

6.700  

5.460  

Min.  

0.087  

0.000  

0.025  

0.018  

0.256  

0.201  

Max.  

A

A1  

b

c

D

D1  

D2  

E

e

L

L1  

L2  

L3  

L4  

Φ

θ

0.094  

0.005  

0.030  

0.023  

0.264  

0.215  

4.830 REF.  

0.190 REF.  

6.000  

2.186  

9.712  

6.200  

2.386  

10.312  

2.900 REF.  

0.236  

0.086  

0.382  

0.244  

0.094  

0.406  

0.114 REF.  

0.063 REF.  

1.400  

1.700  

0.055  

0.067  

1.600 REF.  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.250 REF.  

0.207 REF.  

REEL SPECIFICATION  

P/N  

PKG  

QTY  

MS50N06  

TO-252  

2500  

MS50N06  

Semiconductor  

Compiance  

Attention  

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Any and all MSKSEMI Semiconductor products described or contained herein do not

 

have specifications  

that can handle applications that require extremely high levels of reliability, such as life-support

 

systems,  

aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious  

physical and/or material damage. Consult with your MSKSEMI Semiconductor representative

 

nearest you  

before using any MSKSEMI Semiconductor products described or contained herein in such

 

applications.  

■

MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  

other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described  

orcontained herein.  

■

Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  

performance, characteristics, and functions of the described products in the independent state, and are not  

guarantees of the performance, characteristics, and functions of the described products as mounted in the  

customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent  

device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.  

■

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semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to  

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damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents  

or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention  

circuitsfor safedesign, redundant design, and structural design.  

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or contained herein are controlled under any of applicable local export control laws and regulations, such  

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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  

without the prior written permission of MSKSEMI Semiconductor.  

■

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  

guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and

 

reliable,  

but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or  

other rightsof third parties.  

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Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the  

MSKSEMI Semiconductor productthat you intend to use.