Tokmas-CI72N65
| Part # | Tokmas-CI72N65 |
Download  | Tokmas-CI72N65 |
SJMOSꢀNꢁMOSFET
CI72N65
Features
Product Summary
Ultra-fast body diode
Very low FOM RDS(on)
×
Qg
Easy to use/drive
V
DS
650V
44mΩ
72A
R
DS(on) typ.
I
D
Applications
100% DVDS Tested
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
LLC Half-bridge
100% Avalanche Tested
Charger
Key Performance Parameters
Parameter
Value
700
0.044
165
72
Unit
V
V
DS
@ T
j,max
R
DS(on),max
Ω
Q
g,typ
nC
A
I
D
I
D,pulse
216
19.49
500
242
1.5
A
E
OSS
@ 400V
μJ
A/μs
ns
μC
A
Body Diode di
F
/dt
t
rr
Q
rr
I
rrm
12
SJMOSꢀNꢁMOSFET
CI72N65
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
T
C
= 25
C
º
72
43.2
216
±
30
2185
3.31
13.7
50
Continuous Drain Current
I
D
A
T
C
= 100
C
º
Pulsed Drain Current
(note1)
I
D,pulse
V
GSS
E
AS
A
V
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
(note2)
(note2)
mJ
mJ
A
E
AR
I
AR
MOSFET dv/dt Ruggedness, V
DS
= 0…480V
Power Dissipation For TO-247
dv/dt
P
D
V/ns
W
500
Continuous Diode Forward Current
Diode Pulsed Current
I
S
61
216
A
(note1)
(note3)
(note3)
I
S,pulse
dv/dt
di
f
/dt
Reverse Diode dv/dt
50
V/ns
A/μs
º
C
Maximum Diode Commutation Speed
Operating Junction and Storage Temperature Range
900
T
J
, T
stg
-55~+150
Thermal Resistance For TO-247
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
0.25
62
º
C /W
SJMOSꢀNꢁMOSFET
CI72N65
Electrical Characteristics
T
J
= 25
C
º
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 650V, V
GS
= 0V, T
J
= 150
º
C
V
GS
=
±
30V
650
—
—
—
—
—
4
—
5
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
10000
±
100
5
Gate-Source Leakage Current
Gate-Source Threshold Voltage
I
GSS
—
nA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
3
Drain-Source On-State-Resistance
R
DS(on)
R
G
V
GS
= 10V, I
D
= 36A
—
—
0.037 0.044
Ω
Ω
Gate Resistance
f = 1.0MHz open drain
0.3
—
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
7837
221
13.2
165
50
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 520V, I
D
= 50A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Q
gs
Q
gd
t
d(on)
t
r
70
103
83
V
DD
= 400
V
,
I
D
= 50A,
R
G
= 25Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
543
93
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
T
J
= 25ºC, I
SD
= 36A, V
GS
= 0V
—
—
—
—
1.0
242
1.45
12
1.5
—
V
ns
μC
A
V
R
= 400V, I
F
= 36A,
di
F
/dt = 100A/μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 13.7A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. Identical
low side and high side switch with identical R
G
SJMOSꢀNꢁMOSFET
CI72N65
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
20V
10V
8V
7V
6V
V
DS
= 20V
T
J
= 25ºC
5.5V
5V
T
J
= 150ºC
0
0
0
5
10
15
20
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
0.06
0.05
0.04
0.03
0.02
10
5
V
GS
= 0
f = 1MHz
C
iss
V
GS
= 10V
T
J
= 25ºC
10
4
10
3
10
2
10
1
C
oss
C
rss
500
0
100
200
300
400
600
0
10
20
30
40
50
60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
2
10
1
10
0
12
10
8
T
J
= 125ºC
V
DD
= 120V
V
DD
= 520V
6
T
J
= 25ºC
4
2
10
-1
0
0
0.5
1
1.5
2
0
50
100
150
200
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
SJMOSꢀNꢁMOSFET
CI72N65
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Breakdown voltage vs.
Junction Temperature
3
2.5
2
1.3
1.2
1.1
1
V
GS
= 10V
I
D
= 36A
I
D
= 250µA
1.5
1
0.9
0.8
0.5
0
-30
0
30
60
90
120
150
-50
0
50
100
150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 10. Safe Operation Area For
TO-247
Figure9 . Transient Thermal Impedance For
TO-247
10
3
10
0
10
2
10
1
10
0
10
-1
10
-2
10
-1
D = 0.5
D = 0.2
D = 0.1
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-2
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
Figure 11. Typ. Coss Stored Energy
40
35
30
25
20
15
10
5
0
0
50 100
150 200 250 300 350 400 450 500 550 600 650
V
DS
, Drain-Source Voltage(V)
SJMOSꢀNꢁMOSFET
CI72N65
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
SJMOSꢀNꢁMOSFET
CI72N65
PackageOutlines-TO-247
DOCUMENT NO.
SLC247-3005
0
SCALE
5
0
5
7.5mm
ASIAN PROJECTION
ISSUE DATE
24-02-2020
REVISION
01
