amsem-BC856BM3

Part #	amsem-BC856BM3
Download	amsem-BC856BM3

PNP General Purpose Amplifier

PNP

通用放

大器

DATA SHEET

SOT723

BC856AM3 THRU BC858CM3

◇

Small Outline Surface Mount Package

◇

RoHS compliant / Green EMC

Circuit Diagram

Device

BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C

Marking

3A

3B

3E

3F

3G

3J

3K

3L

MAXIMUM RATINGS (Ta=25

℃

unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

BC856

BC857

BC858

-80

-50

-30

V

CBO

V

V

Collector-Emitter Voltage

Emitter-Base Voltage

BC856

BC857

BC858

-65

-45

-30

V

CEO

V

EBO

I

C

-5

-100

V

mA

mW

℃

/W

℃

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

(Note1)

P

C

265

R

ΘJA

T

j

472

Junction Temperature

150

T

stg

Storage Temperature

-55

～

+150

℃

Note:

1. Device Mounted on FR−5: 1.0 X 0.75 X 0.062 inch.

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 1 ~

PNP General Purpose Amplifier

PNP

通用放

大器

ELECTRICAL CHARACTERISTICS

@ 25°C Unless Otherwise Specified

Symbol

Parameter

Test Conditions

I

C

=-10mA, I

B

=0

Min

Max

Units

V

-65

-45

Collector-Emitter Breakdown

Voltage

BC856

BC857

BC858

V

CEO

-30

I

C

=-

10µA, I

E

=0

-80

-50

Collector-Base Breakdown

Voltage

BC856

BC857

BC858

V

V

CBO

-30

Emitter-Base Breakdown

Voltage

V

I

E

=-1

µA, I

C

=0

-5

V

EBO

I

CBO

nA

V

CB

=-30V, I

E

=0

Collector Cutoff Current

-15

mA

nA

V

CE

=-30V, I

B

=0V

V

EB

=-5V, I

C

=0

I

CEO

I

EBO

Emitter Cutoff Current

Emitter Cutoff Current

-1

-100

V

CE

=-5V, I

C

=-2mA

110

200

420

220

450

800

-0.3

-0.6

BC856A/BC57A/BC548A

BC856B/BC857B/BC858B

BC857C/BC858C

h

FE

DC Current Gain

I

C

=-10mA, I

B

=-0.5mA

I

C

=-100mA, I

B

=-5mA

I

C

=-10mA, I

B

=-0.5mA

I

C

=-100mA, I

B

=-5mA

V

CE

=-5V, I

C

=-2mA

V

CE

=-5V, I

C

=-10mA

Collector-Emitter Saturation

Voltage

V

V

V

CE(sat)

V

BE(sat)

Base-Emitter Saturation

Voltage

-0.9

-1.1

-0.6

100

-0.75

-0.82

V

BE(on)

Base-Emitter On Voltage

V

Current Gain-Bandwidth

Product

V

CE

=-5V, I

C

=-10mA,

f=100MHz

f

T

MHz

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 2 ~

PNP General Purpose Amplifier

PNP

通用放

大器

TYPICAL CHARACTERISTICS

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 3 ~

PNP General Purpose Amplifier

PNP

通用放

大器

ORDERING INFORMATION

Device

Package

SOT723

Shipping

Tape

wide

Emboss

pitch

Tape

Notes

specification

BC856AM3

THRU

Tape & Reel

8mm

4mm

Conductive

8000pcs /7

”

Reel

BC858CM3

PACKAGE DIMENSIONS

Package outline : SOT723

Top view

Side view

Front view

Soldering Pattern

Notice:

1.Lead plating: Pb free solder

2.Lead thickness includes solder plating

3.Lead frame: CAC-5

4.Other Tolerance: ±0.05

5.Dimensions are exclusive of Burrs,Mold Flash and Tie Bar extrusions

6.Unit: mm

Document Number:8010030

Revision:21-Apr-28

An hui Anmei Semiconductor Co.,Ltd.

www.amsemi.com.cn

~ 4 ~