ElecSuper-ES3139KE
| Part # | ElecSuper-ES3139KE |
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ES3139KE
Rev-1.2
SuperMOS
–
DFN1006-3L -20V BV
DSS
580m
Ω
R
DS(ON)
I
D
P-channel MOSFET
1. Description
The ES3139KE is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ES3139KE is Pb-free.
2. Features
⚫
-20V, R
DS(ON)
=580m
Ω
(Typ), V
GS
=-4.5V
Use trench MOSFET technology
High density cell design for low R
DS(on)
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
Low leakage current
3. Applications
⚫
⚫
PWM applications
Load switch
⚫
⚫
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part
Quantity
per reel
Flammability
Rating
Reel
Size
7
Package
Marking Material
Packing
Number
DFN1006-
3L
Halogen
free
Tape &
Reel
ES3139KE
39KE
10K PCS
UL 94V-0
inches
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
1
39KE
2
3
Source
Drain
3
2
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ES3139KE
Rev-1.2
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-20
Unit
V
Gate-Source Voltage
±12
V
T
A
=25°C
T
A
=70°C
-0.65
-0.52
0.9
Continuous Drain Current
I
D
A
Maximum Power Dissipation
Pulsed Drain Current
P
D
I
DM
T
J
W
A
-2.0
Operating Junction
T
e
mperature
Lead
T
e
mperature
150
°C
°C
°C
T
L
260
Storage
T
e
mperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
t ≤ 10s
Parameter
Symbol
R
θJA
Typical
Maximum
138
Unit
Junction-to-Ambient Thermal Resistance
°C/W
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ES3139KE
Rev-1.2
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
T
e
st Conditions
Min.
-20
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0
V
,
I
D
=-250uA
V
V
DS
=-20V, V
GS
=0V
V
DS
=0
V
,
V
GS
=±10V
-1
uA
uA
I
GSS
±10
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
Gate Threshold Voltage
-0.35 -0.62
580
-1.2
850
V
V
GS
=-4.5V, I
D
=-0.5A
V
GS
=-2.5V, I
D
=-0.3A
V
GS
=-1.8V, I
D
=-0.2A
Drain-to-source On-resistance
R
DS(on)
855
1200
2000
mΩ
1350
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
71
20
V
GS
=0
V
,
f
=1MHz,
Output Capacitance
C
OSS
pF
nC
V
DS
=-10V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
RSS
Q
G(TOT)
Q
GS
15
1.25
0.38
0.28
V
GS
=-4.5V, V
DS
=-10V,
I
D
=-0.5A
Gate-to-Source Charge
Gate-to-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
4
t
r
t
d(OFF)
t
f
19
16
25
V
GS
=-4.5V, V
DS
=-10V,
R
L
=2.5Ω, R
G
=-3Ω
ns
V
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0
V
,
I
S
=-0.5A
Forward Voltage
-1.2
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ES3139KE
Rev-1.2
7. Typical
Characteristic
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ES3139KE
Rev-1.2
8. Dimension
(DFN1006-3L)
L4
L1
D
L2
L3
Millimeters
Millimeters
Symbol
Symbol
Min
Max
Min
Max
A
B
0.40
0.00
0.10
0.45
0.90
0.50
0.50
0.05
0.20
0.55
1.05
0.65
e
0.35
0.39
L1
L2
L3
L4
0.20
0.20
0.30
0.30
B1
B2
D
0.25
0.35
E
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ES3139KE
Rev-1.2
DISCLAIMER
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WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE
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(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
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’s products
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’s Terms of Sale or other applicable terms available either on www.elecsuper.com or
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